RQ3E130BNTB

Mfr. #:: RQ3E130BNTB
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET 4.5V Drive Nch MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RQ3E130BNTB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: RQ3E130BNTB Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: HSMT-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 13 A

Rds On - Drain-Source-Widerstand:: 4.4 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 36 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: ROHM Halbleiter

Abfallzeit:: 20 ns

Produktart:: MOSFET

Anstiegszeit:: 34 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 64 ns

Typische Einschaltverzögerungszeit:: 14 ns

Teil # Aliase:: RQ3E130BN

Tags: RQ3E130B, RQ3E13, RQ3E1, RQ3E, RQ3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RQ3E130BNTB Beschreibung

***et: Trans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel

***nell: MOSFET, N-CH, 30V, 39A, 150DEG C, 16W; Transistor Polarity: N Channel; Continuous Drain Current Id: 39A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 16W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Electronics: MOSFET N-CH 30V 13A HSMT8

***i-Key: MOSFET N-CH 30V 13A 8HSMT

***et: Trans MOSFET N-CH 30V 16A 8-Pin Power 33 T/R

***el Electronic: RENESAS - ICL7660AIBAZA-T - Régulateur de tension pompe de charge DC/DC réglable, 1,5V à 12V, -12V à -1,5V/45mA, NSOIC-8

***rchild Semiconductor: This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.

***ure Electronics: Single N-Channel 30 V 5 mOhm 26 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***(Formerly Allied Electronics): Fairchild FDS8896 N-channel MOSFET Transistor; 15 A; 30 V; 8-Pin SOIC

***emi: N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ

***ure Electronics: N-Channel 30 V 6 mOhm SMT PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ

***ment14 APAC: N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:48W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: N-Channel 30 V 80 A 5 mO 34 nC SMT OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

RQ3E130BNTB Mehr Informationen

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RQ3E130BNTB DISTI # 30597548	ROHM Semiconductor	Trans MOSFET N-CH 30V 13A 8-Pin HSMT T/R RoHS: Compliant	3020	34:$0.7575
RQ3E130BNTB DISTI # RQ3E130BNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 13A HSMT8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2482In Stock	1000:$0.1558 500:$0.2017 100:$0.2567 10:$0.3440 1:$0.4000
RQ3E130BNTB DISTI # RQ3E130BNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 13A HSMT8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2482In Stock	1000:$0.1558 500:$0.2017 100:$0.2567 10:$0.3440 1:$0.4000
RQ3E130BNTB DISTI # RQ3E130BNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 13A HSMT8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1184 15000:$0.1290 6000:$0.1379 3000:$0.1469
RQ3E130BNTB DISTI # C1S625901169810	ROHM Semiconductor	Trans MOSFET N-CH 30V 13A 8-Pin HSMT T/R RoHS: Compliant	3020	3000:$0.2720 1000:$0.2900 500:$0.3130 100:$0.3870 50:$0.4230 10:$0.6060
RQ3E130BNTB DISTI # RQ3E130BNTB	ROHM Semiconductor	Trans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E130BNTB) RoHS: Compliant Min Qty: 1 Container: Reel	Europe - 0	1000:€0.1359 500:€0.1459 100:€0.1579 50:€0.1729 25:€0.2109 10:€0.2719 1:€0.3809
RQ3E130BNTB DISTI # RQ3E130BNTB	ROHM Semiconductor	Trans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E130BNTB) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1139 18000:$0.1169 12000:$0.1239 6000:$0.1319 3000:$0.1399
RQ3E130BNTB DISTI # 82AC3043	ROHM Semiconductor	MOSFET, N-CH, 30V, 39A, 150DEG C, 16W,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes	1980	1000:$0.1630 500:$0.1800 250:$0.1980 100:$0.2160 50:$0.2770 25:$0.3380 10:$0.3990 1:$0.5250
RQ3E130BNTB DISTI # 755-RQ3E130BNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	2123	1:$0.5200 10:$0.3950 100:$0.2140 1000:$0.1610 3000:$0.1380 9000:$0.1300 24000:$0.1190 45000:$0.1140
RQ3E130BNTB	ROHM Semiconductor		80	72:$0.7000 19:$0.8400 1:$1.4000
RQ3E130BNTB	ROHM Semiconductor		100	1:¥5.7960 100:¥3.2863 1500:¥2.0835 3000:¥1.5522
RQ3E130BNTB	ROHM Semiconductor	RoHS(ship within 1day)	100	1:$1.0800 10:$0.6300 50:$0.3900 100:$0.3400 500:$0.2900 1000:$0.2800
RQ3E130BNTB DISTI # 2965340	ROHM Semiconductor	MOSFET, N-CH, 30V, 39A, 150DEG C, 16W	1980	500:£0.1470 250:£0.1530 100:£0.1570 25:£0.2740 5:£0.2870
RQ3E130BNTB DISTI # 2965340	ROHM Semiconductor	MOSFET, N-CH, 30V, 39A, 150DEG C, 16W RoHS: Compliant	1980	500:$0.2400 250:$0.2520 100:$0.2760 25:$0.5460 5:$0.5770

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von RQ3E130BNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,52 $~~; ~~0,52 $~~

10: ~~0,40 $~~; ~~3,95 $~~

100: ~~0,21 $~~; ~~21,40 $~~

1000: ~~0,16 $~~; ~~161,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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RQ3E130B 3
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RQ3E1 55
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RQ3 91

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RQ3E130BNTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes