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APT5010B2LLG

APT5010B2LLG
Mfr. #:
APT5010B2LLG
Hersteller:
Microchip / Microsemi
Beschreibung:
Discrete Semiconductor Modules Power MOSFET - MOS7
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT5010B2LLG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Produktart:
Diskrete Halbleitermodule
Werkspackungsmenge:
1
Unterkategorie:
Diskrete Halbleitermodule
Tags
APT5010B2, APT5010B, APT5010, APT501, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET MOS7 500 V 10 OHM TO-247 MAX 3 T-MAX TUBE ROHS COMPLIANT: YES
***ical
Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX
*** Stop Electro
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 500 V 0.078 Ohms Through Hole Power Mosfet - SUPER-247
***ical
Trans MOSFET N-CH 500V 47A 3-Pin Super-247
***ark
Mosfet N-Channel 500V Rohs Compliant: No
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 47A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N, 500V, 43A, SUPER 247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:500V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:47A; Junction to Case Thermal Resistance A:0.28°C/W; Package / Case:Super-247; Power Dissipation Pd:540W; Power Dissipation Pd:450W; Pulse Current Idm:190A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 500 V 0.087 Ohms Through Hole Power Mosfet - SUPER-247
***eco
500V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PA
*** Stop Electro
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
***nell
MOSFET,N CH,W DIODE,500V,46A,SUP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 540W; Transistor Case Style: TO-274AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 30V
***o-Tech
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.2Ohm; ID 23A; TO-247AC; PD 280W; VGS +/-20V
***ure Electronics
Single N-Channel 500 V 0.13 Ohms Through Hole Power Mosfet - SUPER-247
***ark
N Channel Mosfet, 500V, 36A, Super-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.13Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
***nell
MOSFET, N, SUPER 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 446W; Transistor Case Style: TO-274AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 36A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 144A; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247
***el Electronic
N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 54 A, 77 mΩ, TO-247
*** Stop Electro
Power Field-Effect Transistor, 54A I(D), 650V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***el Electronic
Aluminum Electrolytic Capacitors 220μF Radial, Can - SMD ±20% Tape & Reel (TR) HB 0.228 5.80mm Surface Mount Automotive 82mA Cap Aluminum Lytic 220uF 4V 20% (6.3 X 5.8mm) SMD 82mA 2000h 105C T/R
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 52 A, 72 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***el Electronic
Aluminum Electrolytic Capacitors 470μF Radial, Can - SMD ±20% Tape & Reel (TR) HA 0.402 10.20mm Surface Mount Automotive 360mA CAP ALUM 470UF 20% 25V SMD
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Teil # Mfg. Beschreibung Aktie Preis
APT5010B2LLG
DISTI # V36:1790_09096581		Microsemi CorporationTrans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		0
  • 15000:$10.9800
  • 3000:$12.1400
  • 300:$14.7300
  • 30:$15.1900
APT5010B2LLG
DISTI # APT5010B2LLG-ND		Microsemi CorporationMOSFET N-CH 500V 46A T-MAX
RoHS: Compliant
Min Qty: 32
Container: Tube		Temporarily Out of Stock
  • 32:$15.1903
APT5010B2LLG
DISTI # APT5010B2LLG		Microchip Technology IncPower MOS 7 MOSFET N-Channel 500V 46A 3-Pin TO-247 - Rail/Tube (Alt: APT5010B2LLG)
RoHS: Compliant
Min Qty: 32
Container: Tube		Americas - 0
  • 320:$10.1900
  • 160:$10.2900
  • 96:$10.6900
  • 64:$10.9900
  • 32:$11.3900
APT5010B2LLG
DISTI # 494-APT5010B2LLG		Microchip Technology IncDiscrete Semiconductor Modules Power MOSFET - MOS7
RoHS: Compliant		4
  • 1:$17.7100
  • 10:$16.1000
  • 25:$14.8900
  • 50:$14.0800
  • 100:$13.5900
  • 250:$12.4000
  • 500:$11.6100
Bild Teil # Beschreibung
APT5010JVFR

Mfr.#: APT5010JVFR

OMO.#: OMO-APT5010JVFR

 MOSFET FG, FREDFET, 500V, 0.10_OHM, SOT-227
APT5010JVFR

Mfr.#: APT5010JVFR

OMO.#: OMO-APT5010JVFR-1190

 POWER FREDFET TRANSISTOR
APT5010B2FLL

Mfr.#: APT5010B2FLL

OMO.#: OMO-APT5010B2FLL-1190

 Neu und Original
APT5010B2FLLX

Mfr.#: APT5010B2FLLX

OMO.#: OMO-APT5010B2FLLX-1190

 Neu und Original
APT5010JN

Mfr.#: APT5010JN

OMO.#: OMO-APT5010JN-1190

 Power MOS IV MOSFET N-Channel 500V 48A SOT-227 - Rail/Tube (Alt: APT5010JN)
APT5010LFLL

Mfr.#: APT5010LFLL

OMO.#: OMO-APT5010LFLL-1190

 Neu und Original
APT5010LYRG

Mfr.#: APT5010LYRG

OMO.#: OMO-APT5010LYRG-1190

 Neu und Original
APT5010VL

Mfr.#: APT5010VL

OMO.#: OMO-APT5010VL-1190

 Neu und Original
APT5011JNF

Mfr.#: APT5011JNF

OMO.#: OMO-APT5011JNF-1190

 Neu und Original
APT5015BVFRG

Mfr.#: APT5015BVFRG

OMO.#: OMO-APT5015BVFRG-1190

 Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von APT5010B2LLG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
17,71 $
17,71 $
10
16,10 $
161,00 $
25
14,89 $
372,25 $
50
14,08 $
704,00 $
100
13,59 $
1 359,00 $
250
12,40 $
3 100,00 $
500
11,61 $
5 805,00 $
1000
10,36 $
10 360,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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