SK60GAL123

SK60GAL123
Mfr. #:
SK60GAL123
Hersteller:
SEMIKRON
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SK60GAL123 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
Modul
Tags
SK60GAL, SK60GA, SK60G, SK60, SK6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Array & Module Transistor, N Channel, 58 A, 3 V, 600 W, 1.2 Kv, Semitop 2
***hardson RFPD
POWER IGBT TRANSISTOR
***ment14 APAC
Prices include import duty and tax.
***omponent
Semikron power module
***ikron
not recommended for new design Features: Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) N-channel homogeneous silicon structure (NPT-Non punch-through IGBT) High short circuit capability Low tail current with low temperature dependence Typical Applications: Switching (not for linear use) Inverter Switched mode power supplies UPS
***nell
IGBT MODULE, CHOPPER, 1200V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:58A; Voltage, Vce Sat Max:3V; Case Style:SEMITOP 2; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:40A; Current Ic av:58A; Current, Icm Pulsed:57A; External Depth:28mm; Fixing Centres:38mm; Fixing Hole Diameter:2mm; Power, Pd:600W; SMD Marking:SEMITOP2; Temperature, Current:25°C; Time, Rise:90ns; Transistors, No. of:1; Width, External:40.5mm; Voltage:1200V
Teil # Mfg. Beschreibung Aktie Preis
SK 60 GAL 123
DISTI # 77R2313
SEMIKRONIGBT Array & Module Transistor, N Channel, 58 A, 3 V, 600 W, 1.2 kV, SEMITOP 20
    SK60GAL123
    DISTI # 1095545
    SEMIKRON 
    RoHS: Compliant
    0
    • 25:$50.9700
    • 1:$52.9300
    Bild Teil # Beschreibung
    SK60GAL123

    Mfr.#: SK60GAL123

    OMO.#: OMO-SK60GAL123-1190

    Neu und Original
    SK60GAL125

    Mfr.#: SK60GAL125

    OMO.#: OMO-SK60GAL125-1190

    POWER IGBT TRANSISTOR
    SK60GAL128

    Mfr.#: SK60GAL128

    OMO.#: OMO-SK60GAL128-1190

    Neu und Original
    SK60GAR125

    Mfr.#: SK60GAR125

    OMO.#: OMO-SK60GAR125-1190

    Neu und Original
    SK60GB123

    Mfr.#: SK60GB123

    OMO.#: OMO-SK60GB123-1190

    TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,40A I(C)
    SK60GB123D

    Mfr.#: SK60GB123D

    OMO.#: OMO-SK60GB123D-1190

    Neu und Original
    SK60GB125

    Mfr.#: SK60GB125

    OMO.#: OMO-SK60GB125-1190

    POWER IGBT TRANSISTOR
    SK60GD123

    Mfr.#: SK60GD123

    OMO.#: OMO-SK60GD123-1190

    Neu und Original
    SK60GM065

    Mfr.#: SK60GM065

    OMO.#: OMO-SK60GM065-1190

    Neu und Original
    SK60GM123

    Mfr.#: SK60GM123

    OMO.#: OMO-SK60GM123-1190

    IGBT Array & Module Transistor, N Channel, 3 V, 600 W, 1.2 kV, SEMITOP 2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SK60GAL123 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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