LET9120

LET9120
Mfr. #:
LET9120
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
LET9120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
LET9120 Mehr Informationen LET9120 Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
LET9120
Typ
HF-Leistungs-MOSFET
Verpackung
Schüttgut
Montageart
SMD/SMT
Paket-Koffer
M246
Technologie
Si
Gewinnen
18 dB at 860 MHz
Ausgangsleistung
120 W
Pd-Verlustleistung
200 W
Maximale-Betriebstemperatur
+ 150 C
Arbeitsfrequenz
1.6 GHz
Vgs-Gate-Source-Spannung
15 V
ID-Dauer-Drain-Strom
18 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Transistor-Polarität
N-Kanal
Tags
LET91, LET9, LET
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
LETxx RF Power Transistors
STMicroelectronics LETxx RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. The LETxx RF Power Transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0 GHz. These STMicroelectronics LETxx RF Power Transistors are specifically designed for 28 V (cellular base stations) and 32/36 V (avionics) applications. The LET9x RF Power Transistors have a significant improvement in terms of RF performance (+3 dB gain, +15% efficiency), ruggedness and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems and L-band satellite uplink equipment.Learn More
Teil # Mfg. Beschreibung Aktie Preis
LET9120
DISTI # 497-12848-ND
STMicroelectronicsMOSFET N-CH 80V 18A M-246
RoHS: Compliant
Min Qty: 60
Container: Tray
Temporarily Out of Stock
  • 60:$182.8750
LET9120
DISTI # LET9120
STMicroelectronicsTrans MOSFET N-CH 80V 18A 5-Pin Case M-246 Loose Piece (Alt: LET9120)
RoHS: Compliant
Min Qty: 60
Container: Case
Asia - 0
    LET9120
    DISTI # LET9120
    STMicroelectronicsTrans MOSFET N-CH 80V 18A 5-Pin Case M-246 Loose Piece - Boxed Product (Development Kits) (Alt: LET9120)
    RoHS: Compliant
    Min Qty: 60
    Container: Box
    Americas - 0
    • 60:$187.3900
    • 120:$178.4900
    • 240:$170.4900
    • 360:$162.8900
    • 600:$159.5900
    LET9120
    DISTI # 511-LET9120
    STMicroelectronicsRF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
    RoHS: Compliant
    0
    • 60:$172.5000
    LET9120
    DISTI # LET9120
    STMicroelectronicsRF POWER TRANSISTOR
    RoHS: Compliant
    0
    • 60:$173.9900
    • 100:$171.6700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von LET9120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    184,35 $
    184,35 $
    10
    175,13 $
    1 751,29 $
    100
    165,91 $
    16 591,14 $
    500
    156,69 $
    78 347,05 $
    1000
    147,48 $
    147 476,80 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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