RGW80TK65GVC11

RGW80TK65GVC11
Mfr. #:
RGW80TK65GVC11
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGW80TK65GVC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RGW80TK65GVC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PFM
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.5 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
39 A
Pd - Verlustleistung:
81 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
39 A
Marke:
ROHM Halbleiter
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Unterkategorie:
IGBTs
Tags
RGW8, RGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Teil # Mfg. Beschreibung Aktie Preis
RGW80TK65GVC11
DISTI # RGW80TK65GVC11-ND
ROHM Semiconductor650V 40A FIELD STOP TRENCH IGBT
RoHS: Compliant
Min Qty: 1
Container: Tube
450In Stock
  • 2700:$2.6600
  • 900:$3.1540
  • 450:$3.5150
  • 25:$4.2752
  • 10:$4.5220
  • 1:$5.0400
RGW80TK65GVC11
DISTI # RGW80TK65GVC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 39A 3-Pin TO-3PFM Tube - Rail/Tube (Alt: RGW80TK65GVC11)
Min Qty: 450
Container: Tube
Americas - 0
    RGW80TK65GVC11
    DISTI # 65AC4006
    ROHM SemiconductorIGBT, SINGLE, 650V, 39A, TO-3PFM,DC Collector Current:39A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:81W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3PFM,No. of Pins:3Pins,RoHS Compliant: Yes30
    • 500:$3.1800
    • 250:$3.5500
    • 100:$3.7400
    • 50:$3.9300
    • 25:$4.1200
    • 10:$4.3100
    • 1:$5.0800
    RGW80TK65GVC11
    DISTI # 755-RGW80TK65GVC11
    ROHM SemiconductorIGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
    RoHS: Compliant
    0
    • 1:$5.0300
    • 10:$4.2700
    • 100:$3.7000
    • 250:$3.5100
    • 500:$3.1500
    • 1000:$2.6600
    • 2500:$2.5200
    RGW80TK65GVC11ROHM SemiconductorIGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBTAmericas -
      RGW80TK65GVC11
      DISTI # 2900180
      ROHM SemiconductorIGBT, SINGLE, 650V, 39A, TO-3PFM30
      • 500:£2.3600
      • 250:£2.6200
      • 100:£2.7600
      • 10:£3.1900
      • 1:£4.1800
      RGW80TK65GVC11
      DISTI # 2900180
      ROHM SemiconductorIGBT, SINGLE, 650V, 39A, TO-3PFM
      RoHS: Compliant
      30
      • 1000:$4.0300
      • 500:$4.0800
      • 250:$4.3000
      • 100:$4.5500
      • 10:$5.1400
      • 1:$5.5000
      Bild Teil # Beschreibung
      RGW80TK65DGVC11

      Mfr.#: RGW80TK65DGVC11

      OMO.#: OMO-RGW80TK65DGVC11

      IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
      RGW80TK65GVC11

      Mfr.#: RGW80TK65GVC11

      OMO.#: OMO-RGW80TK65GVC11

      IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
      RGW80TK65DGVC11

      Mfr.#: RGW80TK65DGVC11

      OMO.#: OMO-RGW80TK65DGVC11-ROHM-SEMI

      650V 40A FIELD STOP TRENCH IGBT
      RGW80TK65GVC11

      Mfr.#: RGW80TK65GVC11

      OMO.#: OMO-RGW80TK65GVC11-ROHM-SEMI

      650V 40A FIELD STOP TRENCH IGBT
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von RGW80TK65GVC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,03 $
      5,03 $
      10
      4,27 $
      42,70 $
      100
      3,70 $
      370,00 $
      250
      3,51 $
      877,50 $
      500
      3,15 $
      1 575,00 $
      1000
      2,66 $
      2 660,00 $
      2500
      2,52 $
      6 300,00 $
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