ZXMN10B08E6TA

Mfr. #:: ZXMN10B08E6TA
Hersteller:: Diodes Incorporated
Beschreibung:: Darlington Transistors MOSFET 100V N-Chnl UMOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: ZXMN10B08E6TA Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: ZXMN10B08E6TA Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Eingebaute Dioden

Produktkategorie: FETs - Einzeln

Serie: ZXMN10

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.000529 oz

Montageart: SMD/SMT

Paket-Koffer: SOT-23-6

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SOT-26

Aufbau: Single Quad Drain

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 1.1W

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 100V

Eingangskapazität-Ciss-Vds: 497pF @ 50V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 1.6A (Ta)

Rds-On-Max-Id-Vgs: 230 mOhm @ 1.6A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 9.2nC @ 10V

Pd-Verlustleistung: 1.1 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 2.1 ns

Anstiegszeit: 2.1 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 1.9 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Widerstand: 230 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 12.1 ns

Typische-Einschaltverzögerungszeit: 2.9 ns

Kanal-Modus: Erweiterung

Tags: ZXMN10B08E6TA, ZXMN10B08E6T, ZXMN10B, ZXMN10, ZXMN1, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN10B08E6TA Beschreibung

***Components: In a Pack of 10, N-Channel MOSFET, 1.9 A, 100 V, 6-Pin SOT-23 Diodes Inc ZXMN10B08E6TA

***ure Electronics: ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6

***ical: Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R

***p One Stop Global: Trans MOSFET N-CH 100V 1.9A 6-Pin SOT-23 T/R

***ied Electronics & Automation: MOSFET N-Channel 100V 1.9A SOT23-6

*** Source Electronics: MOSFET N-CH 100V 1.6A SOT23-6

***ronik: N-CH MOS-FET 1,9A 100V SOT23-6

***ser: MOSFETs 100V N-Chnl UMOS

ZXMN10B08E6TA Mehr Informationen

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
ZXMN10B08E6TA DISTI # V79:2366_18322372	Zetex / Diodes Inc	Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R RoHS: Compliant	271	24000:$0.1971 9000:$0.2186 3000:$0.2429 1000:$0.2872 100:$0.3547 10:$0.5264 1:$0.6246
ZXMN10B08E6TA DISTI # ZXMN10B08E6CT-ND	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	33588In Stock	1000:$0.3462 500:$0.4328 100:$0.5843 10:$0.7570 1:$0.8700
ZXMN10B08E6TA DISTI # ZXMN10B08E6DKR-ND	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	33588In Stock	1000:$0.3462 500:$0.4328 100:$0.5843 10:$0.7570 1:$0.8700
ZXMN10B08E6TA DISTI # ZXMN10B08E6TR-ND	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	27000In Stock	3000:$0.3046
ZXMN10B08E6TA DISTI # 26120585	Zetex / Diodes Inc	Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R RoHS: Compliant	271	100:$0.3547 29:$0.5264
ZXMN10B08E6TA DISTI # ZXMN10B08E6TA	Diodes Incorporated	Trans MOSFET N-CH 100V 1.9A 6-Pin SOT-23 T/R - Tape and Reel (Alt: ZXMN10B08E6TA) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2689 6000:$0.2549 12000:$0.2439 18000:$0.2319 30000:$0.2269
ZXMN10B08E6TA DISTI # 70438813	Diodes Incorporated	MOSFET N-Channel 100V 1.9A SOT23-6 RoHS: Compliant	0	50:$0.5400 200:$0.5000 500:$0.4600 1000:$0.4100
ZXMN10B08E6TA DISTI # 522-ZXMN10B08E6TA	Diodes Incorporated	MOSFET 100V N-Chnl UMOS RoHS: Compliant	467	1:$0.7200 10:$0.5930 100:$0.3820 1000:$0.3060
ZXMN10B08E6TA	Diodes Incorporated	ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6 RoHS: Compliant	1650Cut Tape/Mini-Reel	1:$0.3750 100:$0.3100 250:$0.3000 500:$0.2950 1500:$0.2700
ZXMN10B08E6TA DISTI # 6697420P	Zetex / Diodes Inc	MOSFET N-CHANNEL 100V 1.9A SOT23-6, RL	820	50:£0.3810 200:£0.3170 500:£0.3090
ZXMN10B08E6TA DISTI # C1S205700331887	Diodes Incorporated	Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R RoHS: Compliant	271	100:$0.3547 10:$0.5264

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: ZXMN10A08DN8TA OMO.#: OMO-ZXMN10A08DN8TA	MOSFET 100V 2.1A N-Channel Enhancement MOSFET
	Mfr.#: ZXMN10A07Z OMO.#: OMO-ZXMN10A07Z-1190	Neu und Original
	Mfr.#: ZXMN10A09K OMO.#: OMO-ZXMN10A09K-1190	Neu und Original
	Mfr.#: ZXMN10A11G OMO.#: OMO-ZXMN10A11G-1190	MOSFET, N CHANNEL, 100V, 2.4A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.6ohm, Rds(on) Test Voltage Vgs:10V,
	Mfr.#: ZXMN10B08E6QTA , MAX6465 OMO.#: OMO-ZXMN10B08E6QTA-MAX6465-1190	Neu und Original
	Mfr.#: ZXMN10B08E6TC OMO.#: OMO-ZXMN10B08E6TC-DIODES	MOSFET N-CH 100V 1.6A SOT23-6
	Mfr.#: ZXMN10A08DN8TA-CUT TAPE OMO.#: OMO-ZXMN10A08DN8TA-CUT-TAPE-1190	Neu und Original
	Mfr.#: ZXMN10A08E6TC-CUT TAPE OMO.#: OMO-ZXMN10A08E6TC-CUT-TAPE-1190	Neu und Original
	Mfr.#: ZXMN10A11KTC OMO.#: OMO-ZXMN10A11KTC-DIODES	Darlington Transistors MOSFET N-Chan 100V MOSFET (UMOS)
	Mfr.#: ZXMN10A09KTC OMO.#: OMO-ZXMN10A09KTC-DIODES	MOSFET MOSFET N-CH 100V

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von ZXMN10B08E6TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,30 $~~; ~~0,30 $~~

10: ~~0,28 $~~; ~~2,81 $~~

100: ~~0,27 $~~; ~~26,61 $~~

500: ~~0,25 $~~; ~~125,65 $~~

1000: ~~0,24 $~~; ~~236,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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ZXMN10B08E6TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes