BUZ10

Mfr. #:: BUZ10
Hersteller:: STMicroelectronics
Beschreibung:: MOSFET N-Ch 50 Volt 23 Amp
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BUZ10 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BUZ10 Datasheet BUZ10 Datasheet (P4-P6)BUZ10 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: BUZ10 Mehr Informationen BUZ10 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 50 V

Id - Kontinuierlicher Drainstrom:: 23 A

Rds On - Drain-Source-Widerstand:: 60 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 75 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Rohr

Höhe:: 9.15 mm

Länge:: 10.4 mm

Serie:: BUZ10

Transistortyp:: 1 N-Channel

Typ:: MOSFET

Breite:: 4.6 mm

Marke:: STMicroelectronics

Vorwärtstranskonduktanz - Min:: 11 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 45 ns

Werkspackungsmenge:: 50

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 48 ns

Typische Einschaltverzögerungszeit:: 20 ns

Gewichtseinheit:: 0.011640 oz

Tags: BUZ10, BUZ1, BUZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUZ10 Beschreibung

***akorn: MOSFET N-CH 50V 23A TO-220

***ser: MOSFETs N-Ch 50 Volt 23 Amp

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BUZ10 DISTI # 497-2728-5-ND	STMicroelectronics	MOSFET N-CH 50V 23A TO-220 RoHS: Not compliant Min Qty: 2000 Container: Tube	Limited Supply - Call
BUZ100S	Infineon Technologies AG	Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	5031	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200
BUZ103SL	Infineon Technologies AG	Power Field-Effect Transistor, 28A I(D), 55V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	58489	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
BUZ100S-E3045A	Infineon Technologies AG	RoHS: Not Compliant	30500	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200
BUZ101SL	Infineon Technologies AG	Power Field-Effect Transistor, 20A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	23800	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
BUZ101L	Infineon Technologies AG	Power Field-Effect Transistor, 29A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	5075	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
BUZ102SL	Infineon Technologies AG	Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	123056	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
BUZ103SL-E3045A	Infineon Technologies AG	RoHS: Not Compliant	1000	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
BUZ102SL-E3045A	Infineon Technologies AG	RoHS: Not Compliant	73903	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
BUZ10 DISTI # 511-BUZ10	STMicroelectronics	MOSFET N-Ch 50 Volt 23 Amp RoHS: Compliant	0
BUZ100S E3045A	Infineon Technologies AG		2840	3:$1.6875 13:$1.0969 47:$0.6328 160:$0.5400 344:$0.4725 816:$0.4388
BUZ101SL E3045A	Infineon Technologies AG		850	5:$1.2000 18:$0.7800 66:$0.4500 224:$0.3840 483:$0.3360
BUZ103S	Siemens		153
BUZ102	Siemens		350
BUZ103ALE3045A	Infineon Technologies AG		4825
BUZ10	SEIM	MOSFET Transistor, N-Channel, TO-220AB	20	19:$1.1000 4:$1.3750 1:$1.6500
BUZ10	Siemens	MOSFET Transistor, N-Channel, TO-220AB	3	4:$1.2000 1:$1.5000
BUZ100L-E3045A	Siemens	60 A, 50 V, 0.018 OHM, N-CHANNEL, SI, POWER, MOSFET, D2PAK (Also Known As: BUZ100L-D2PAK)	732	641:$0.8625 297:$0.9375 1:$2.2500
BUZ100L-E3045A	Siemens	60 A, 50 V, 0.018 OHM, N-CHANNEL, SI, POWER, MOSFET, D2PAK	732	641:$0.8625 297:$0.9375 1:$2.2500
BUZ100L-E3045A	Siemens	60 A, 50 V, 0.018 OHM, N-CHANNEL, SI, POWER, MOSFET, D2PAK	72	51:$1.1250 14:$1.5000 1:$2.2500
BUZ100L-E3045A	Siemens	60 A, 50 V, 0.018 OHM, N-CHANNEL, SI, POWER, MOSFET, D2PAK (Also Known As: BUZ100L-D2PAK)	72	51:$1.1250 14:$1.5000 1:$2.2500
BUZ100S-E3045A	Siemens	77 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB (Also Known As: BUZ100S)	1909	1423:$0.4950 318:$0.5625 1:$1.8000
BUZ100S-E3045A	Siemens	77 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	1909	1423:$0.4950 318:$0.5625 1:$1.8000
BUZ100S-E3045A	Infineon Technologies AG	77 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	2272	1369:$0.5625 297:$0.5850 1:$2.2500
BUZ100S-E3045A	Infineon Technologies AG	77 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB (Also Known As: BUZ100S)	2272	1369:$0.5625 297:$0.5850 1:$2.2500
BUZ100SL	Siemens	70 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	320
BUZ100SL-E3045	Siemens	70 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	84
BUZ100SL-E3045A	Siemens	70 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	317	287:$0.6250 51:$0.7000 1:$2.0000
BUZ101L	Siemens	29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220	50
BUZ101SL	Infineon Technologies AG	20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	14198	3637:$0.3938 1708:$0.4125 1:$1.5000
BUZ10	Siemens	Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 34825
BUZ103	Siemens	Power Field-Effect Transistor, 40A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 72
BUZ102ALE3045A	Siemens	RoHS: Not Compliant	Europe - 1630
BUZ100SE3045A	Infineon Technologies AG	Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	Europe - 1000
BUZ104S	Infineon Technologies AG	Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Americas - 46240
BUZ104L	Siemens	Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 800
BUZ103AL	Siemens	Power Field-Effect Transistor, 35A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 396
BUZ10L	siemens	RoHS: Not Compliant	Europe - 22650
BUZ10LE3045A	Siemens	Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	Europe - 3674
BUZ102SLE3045A	Siemens	Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	Europe - 1000
BUZ100E3044	Siemens	Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	Europe - 6545
BUZ101S	Siemens	Power Field-Effect Transistor, 22A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 938
BUZ104	Infineon Technologies AG	Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 15000
BUZ104E3046	Siemens	RoHS: Not Compliant	Europe - 22650
BUZ10	STMicroelectronics	INSTOCK	28
BUZ102S	Infineon Technologies AG	INSTOCK	448
BUZ100SL-E3045A	Siemens		2285

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BU-2323-10-60-0 OMO.#: OMO-BU-2323-10-60-0-MUELLER-ELECTRIC	Cable Assembly Test Lead 1.524m 10AWG Stacking Banana to Stacking Banana 1 to 1 POS PL-PL
	Mfr.#: BU2098F-E2 , TK11230CMIL OMO.#: OMO-BU2098F-E2-TK11230CMIL-1190	Neu und Original
	Mfr.#: BU46L414G , TLZ56-GS08 , OMO.#: OMO-BU46L414G-TLZ56-GS08--1190	Neu und Original
	Mfr.#: BU5908U OMO.#: OMO-BU5908U-1190	Neu und Original
	Mfr.#: BUK455-100 OMO.#: OMO-BUK455-100-1190	Neu und Original
	Mfr.#: BUV74W-400 OMO.#: OMO-BUV74W-400-1190	Neu und Original
	Mfr.#: BUZZER/AC1205G OMO.#: OMO-BUZZER-AC1205G-1190	Neu und Original
	Mfr.#: BUK7230-55A,118 OMO.#: OMO-BUK7230-55A-118-NEXPERIA	RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
	Mfr.#: BUK95180-100A,127 OMO.#: OMO-BUK95180-100A-127-NXP-SEMICONDUCTORS	RF Bipolar Transistors MOSFET RAIL PWR-MOS
	Mfr.#: BU7322HFV-TR OMO.#: OMO-BU7322HFV-TR-ROHM-SEMI	IC CLK GENERATOR 1CH 6-HVSOF

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von BUZ10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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BUZ10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes