MMRF1312GSR5

MMRF1312GSR5
Mfr. #:
MMRF1312GSR5
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MMRF1312GSR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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HTML Datasheet:
MMRF1312GSR5 DatasheetMMRF1312GSR5 Datasheet (P4-P6)MMRF1312GSR5 Datasheet (P7-P9)MMRF1312GSR5 Datasheet (P10-P12)MMRF1312GSR5 Datasheet (P13-P15)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.6 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 112 V
Gewinnen:
19.6 dB
Ausgangsleistung:
1 kW
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-1230GS-4L-4
Verpackung:
Spule
Arbeitsfrequenz:
900 MHz to 1.215 GHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
2 Channel
Pd - Verlustleistung:
1.053 kW
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Teil # Aliase:
935320794178
Gewichtseinheit:
0.300472 oz
Tags
MMRF1312, MMRF131, MMRF13, MMRF1, MMRF, MMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,900 to 1215 MHz, 1000 W, Typ Gain in dB is 17.3 @ 960 MHz, 52 V, LDMOS, SOT1806
***et
VHV8 1KW 50V NI1230GS-4L
***i-Key
TRANS 900-1215MHZ 1000W 52V
***hardson RFPD
RF POWER TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
MMRF1312GSR5
DISTI # V36:1790_14214002
NXP SemiconductorsMMRF1312GS/CFM4/REEL 13" Q2/T30
    MMRF1312GSR5
    DISTI # MMRF1312GSR5TR-ND
    NXP SemiconductorsTRANS 960-1215MHZ 1000W PEAK 50V
    RoHS: Compliant
    Min Qty: 50
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 50:$552.9076
    MMRF1312GSR5
    DISTI # MMRF1312GSR5
    Avnet, Inc.VHV8 1KW 50V NI1230GS-4L - Tape and Reel (Alt: MMRF1312GSR5)
    RoHS: Compliant
    Min Qty: 50
    Container: Reel
    Americas - 0
    • 500:$528.8900
    • 300:$539.0900
    • 200:$559.4900
    • 100:$582.1900
    • 50:$605.9900
    MMRF1312GSR5
    DISTI # 841-MMRF1312GSR5
    NXP SemiconductorsRF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V0
    • 50:$532.1500
    MMRF1312GSR5
    DISTI # MMRF1312GSR5
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    0
    • 50:$530.0400
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    OMO.#: OMO-MMRF1315NR1

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    Mfr.#: MMRF1320NR1

    OMO.#: OMO-MMRF1320NR1-NXP-SEMICONDUCTORS

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    MMRF1311HR5

    Mfr.#: MMRF1311HR5

    OMO.#: OMO-MMRF1311HR5-NXP-SEMICONDUCTORS

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    Mfr.#: MMRF1310HR5

    OMO.#: OMO-MMRF1310HR5-NXP-SEMICONDUCTORS

    RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von MMRF1312GSR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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