OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

A3T18H455W23SR6

A3T18H455W23SR6
Mfr. #:
A3T18H455W23SR6
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A3T18H455W23SR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A3T18H455W23SR6 DatasheetA3T18H455W23SR6 Datasheet (P4-P6)A3T18H455W23SR6 Datasheet (P7-P9)A3T18H455W23SR6 Datasheet (P10-P12)A3T18H455W23SR6 Datasheet (P13-P15)A3T18H455W23SR6 Datasheet (P16-P17)
ECAD Model:
Mehr Informationen:
A3T18H455W23SR6 Mehr Informationen A3T18H455W23SR6 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
3.6 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 65 V
Gewinnen:
16.7 dB
Ausgangsleistung:
87 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
ACP-1230S-4L2S
Verpackung:
Spule
Arbeitsfrequenz:
1805 MHz to 1880 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
2 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Teil # Aliase:
935354975128
Gewichtseinheit:
0.212803 oz
Tags
A3T18, A3T1, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast Rf Power Ldmos Transistor, 1805-1880 Mhz, 87 W Avg., 30 V
***et
RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R
***W
RF Power Transistor, 1.805 to 1.88 GHz, 87 W Avg., Typ Gain in dB is 17.4 @ 1840 MHz, 30 V, SOT1800-4, LDMOS
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Teil # Mfg. Beschreibung Aktie Preis
A3T18H455W23SR6
DISTI # A3T18H455W23SR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$122.2403
A3T18H455W23SR6
DISTI # A3T18H455W23SR6		Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T18H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$116.8900
  • 900:$119.1900
  • 600:$123.6900
  • 300:$128.6900
  • 150:$133.8900
A3T18H455W23SR6
DISTI # A3T18H455W23SR6		Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R (Alt: A3T18H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel		Europe - 0
  • 1500:€110.3900
  • 900:€113.1900
  • 600:€116.9900
  • 300:€120.7900
  • 150:€122.9900
A3T18H455W23SR6
DISTI # 771-A3T18H455W23SR6		NXP SemiconductorsRF MOSFET Transistors A3T18H455W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 150:$113.7100
A3T18H455W23SR6
DISTI # A3T18H455W23SR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		88
  • 1:$153.6800
  • 10:$142.0500
  • 25:$137.8600
Bild Teil # Beschreibung
A3T18H400W23SR6

Mfr.#: A3T18H400W23SR6

OMO.#: OMO-A3T18H400W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V
A3T18H455W23SR6

Mfr.#: A3T18H455W23SR6

OMO.#: OMO-A3T18H455W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
A3T18H400W23SR6

Mfr.#: A3T18H400W23SR6

OMO.#: OMO-A3T18H400W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
A3T18H455W23SR6

Mfr.#: A3T18H455W23SR6

OMO.#: OMO-A3T18H455W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von A3T18H455W23SR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Beginnen mit
Top