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FDMA8051L

FDMA8051L
Mfr. #:
FDMA8051L
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET FET 40V 14.0 MOHM MLP22
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMA8051L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMA8051L Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MicroFET-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
18 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.6 V
Qg - Gate-Ladung:
14 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.4 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2 mm
Serie:
FDMA8051L
Transistortyp:
1 N-Channel
Breite:
2 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
1.8 ns
Produktart:
MOSFET
Anstiegszeit:
1.8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
6.4 ns
Gewichtseinheit:
0.001058 oz
Tags
FDMA8, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 40V, 10A, 14mΩ
***Yang
Transistor MOSFET N-CH 40V 10A 6-Pin WDFN T/R - Tape and Reel
***sible Micro
Transistor, MOSFET, N-Channel, 2x2mm, 40V, 10A, 2.4W, 6-WDF
***ment14 APAC
MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:40V; On Resistance
***rchild Semiconductor
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
***nell
MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***p One Stop Global
Trans MOSFET P-CH 40V 10.8A Automotive 3-Pin(2+Tab) TO-252 T/R
***ure Electronics
P-Channel 40 V 12.3 mOhm 50 nC Surface Mount PowerTrench Mosfet - DPAK
***roFlash
Power Field-Effect Transistor, 10.8A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
***Yang
Transistor: P-MOSFET, unipolar, -40V, -50A, 12.3ohm, 69W, -55+175 deg.C, SMD, TO252(DPAK)
***emi
PowerTrench® MOSFET, P-Channel, -40V, -50A, 12.3mΩ
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 40V, 0.0187ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
***nell
MOSFET, P CH, 40V, 10.8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):10.1mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69
***emi
P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ
*** Electronics
ON SEMICONDUCTOR - FDS4675 - Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount
***Yang
Trans MOSFET P-CH 40V 11A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
MOSFET, P, SMD, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:2.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Package / Case:SOIC; Power Dissipation Pd:2.4W; Termination Type:SMD; Voltage Vds Typ:-40V; Voltage Vgs Max:-1.4V; Voltage Vgs Rds on Measurement:-10V
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).
***ure Electronics
Single N-Channel 30 V 10 mOhm 13 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 30 V 12 mOhm OptiMOS™3 Power-Mosfet - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:39A; Power Dissipation Pd:28W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ark
Mosfet Transistor, N Channel, 13 A, 30 V, 10 Mohm, 10 V, 1.8 V
***et Japan
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, 30V, 13A, 10 mOhm, 9.5 nC Qg, SO-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipa
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDMA8051L
DISTI # V72:2272_06337828		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R2400
  • 1000:$0.4423
  • 500:$0.5409
  • 250:$0.5782
  • 100:$0.6425
  • 25:$0.7501
  • 10:$0.9168
  • 1:$1.0844
FDMA8051L
DISTI # V36:1790_06337828		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R0
  • 3000000:$0.3495
  • 1500000:$0.3497
  • 300000:$0.3642
  • 30000:$0.3873
  • 3000:$0.3911
FDMA8051L
DISTI # FDMA8051LCT-ND		ON SemiconductorMOSFET N-CH 40V 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11812In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
FDMA8051L
DISTI # FDMA8051LDKR-ND		ON SemiconductorMOSFET N-CH 40V 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11812In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
FDMA8051L
DISTI # FDMA8051LTR-ND		ON SemiconductorMOSFET N-CH 40V 6-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.3325
  • 15000:$0.3360
  • 6000:$0.3491
  • 3000:$0.3675
FDMA8051L
DISTI # 31984721		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R2400
  • 20:$1.0844
FDMA8051L
DISTI # FDMA8051L		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R (Alt: FDMA8051L)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3099
  • 18000:€0.3339
  • 12000:€0.3619
  • 6000:€0.3949
  • 3000:€0.4829
FDMA8051L
DISTI # FDMA8051L		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R - Tape and Reel (Alt: FDMA8051L)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3079
  • 18000:$0.3159
  • 12000:$0.3199
  • 6000:$0.3239
  • 3000:$0.3259
FDMA8051L
DISTI # FDMA8051L		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R - Bulk (Alt: FDMA8051L)
Min Qty: 893
Container: Bulk		Americas - 0
  • 8930:$0.3449
  • 4465:$0.3539
  • 2679:$0.3579
  • 1786:$0.3629
  • 893:$0.3659
FDMA8051L
DISTI # 38X5350		ON SemiconductorFET 40V 14.0 MOHM MLP22 / REEL0
  • 24000:$0.3220
  • 9000:$0.3320
  • 1:$0.3450
FDMA8051L
DISTI # 99AC9164		ON SemiconductorMOSFET, N-CH, 40V, 10A, 2.4W, WDFN,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes0
  • 1000:$0.3790
  • 500:$0.4810
  • 250:$0.5120
  • 100:$0.5430
  • 50:$0.5980
  • 25:$0.6520
  • 10:$0.7070
  • 1:$0.8380
FDMA8051L.
DISTI # 96AC0017		ON SemiconductorFET 40V 14.0 MOHM MLP22 ROHS COMPLIANT: YES3000
  • 24000:$0.3220
  • 9000:$0.3320
  • 1:$0.3450
FDMA8051L
DISTI # 512-FDMA8051L		ON SemiconductorMOSFET FET 40V 14.0 MOHM MLP22
RoHS: Compliant		5080
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 3000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
FDMA8051LON SemiconductorSmall Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		4120
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
FDMA8051LFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		502
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
FDMA8051L
DISTI # 8648170P		ON SemiconductorMOSFET N-CH 40V 10A POWERTRENCH MLP6, RL14310
  • 3000:£0.2920
  • 1000:£0.3170
  • 500:£0.4030
  • 50:£0.4970
FDMA8051L
DISTI # 2992326		ON SemiconductorMOSFET, N-CH, 40V, 10A, 2.4W, WDFN
RoHS: Compliant		3000
  • 1000:$0.4730
  • 500:$0.5330
  • 250:$0.5880
  • 100:$0.6440
  • 25:$0.9740
  • 5:$1.0700
FDMA8051L
DISTI # 2992326		ON SemiconductorMOSFET, N-CH, 40V, 10A, 2.4W, WDFN3000
  • 500:£0.3450
  • 250:£0.3680
  • 100:£0.3900
  • 10:£0.5570
  • 1:£0.6880
Bild Teil # Beschreibung
ATECC608A-MAHCZ-S

Mfr.#: ATECC608A-MAHCZ-S

OMO.#: OMO-ATECC608A-MAHCZ-S

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ZXMP6A17E6TA

Mfr.#: ZXMP6A17E6TA

OMO.#: OMO-ZXMP6A17E6TA

 MOSFET P-Ch 60 Volt 3.0A
V40DL45HM3_A/I

Mfr.#: V40DL45HM3_A/I

OMO.#: OMO-V40DL45HM3-A-I

 Schottky Diodes & Rectifiers TMBS 45V Vrrm eSMP AEC-Q101 Qualified
NFM31KC223R1H3L

Mfr.#: NFM31KC223R1H3L

OMO.#: OMO-NFM31KC223R1H3L

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Mfr.#: BMP388

OMO.#: OMO-BMP388

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ATECC608A-MAHCZ-S

Mfr.#: ATECC608A-MAHCZ-S

OMO.#: OMO-ATECC608A-MAHCZ-S-MICROCHIP-TECHNOLOGY

 Microchip Crypto Authentication Device
V40DL45HM3_A/I

Mfr.#: V40DL45HM3_A/I

OMO.#: OMO-V40DL45HM3-A-I-VISHAY

 DIODE SCHOTTKY 45V 40A TO263AC
EMHS500ARA471MKG5S

Mfr.#: EMHS500ARA471MKG5S

OMO.#: OMO-EMHS500ARA471MKG5S-1190

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BMP388

Mfr.#: BMP388

OMO.#: OMO-BMP388-BOSCH-SENSORTEC

 SENSOR PRESSURE ABS
ZXMP6A17E6TA

Mfr.#: ZXMP6A17E6TA

OMO.#: OMO-ZXMP6A17E6TA-DIODES

 IGBT Transistors MOSFET P-Ch 60 Volt 3.0A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von FDMA8051L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,83 $
0,83 $
10
0,70 $
7,00 $
100
0,54 $
53,80 $
500
0,48 $
238,00 $
1000
0,38 $
375,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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