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PD55003-E

PD55003-E
Mfr. #:
PD55003-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors RF POWER TRANS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD55003-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD55003-E DatasheetPD55003-E Datasheet (P4-P6)PD55003-E Datasheet (P7-P9)PD55003-E Datasheet (P10-P12)PD55003-E Datasheet (P13-P15)PD55003-E Datasheet (P16-P18)PD55003-E Datasheet (P19-P21)PD55003-E Datasheet (P22-P24)PD55003-E Datasheet (P25-P27)PD55003-E Datasheet (P28-P29)
ECAD Model:
Mehr Informationen:
PD55003-E Mehr Informationen PD55003-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.5 A
Vds - Drain-Source-Durchbruchspannung:
40 V
Gewinnen:
17 dB
Ausgangsleistung:
3 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Formed-4
Verpackung:
Rohr
Aufbau:
Single
Höhe:
3.5 mm
Länge:
7.5 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD55003-E
Typ:
HF-Leistungs-MOSFET
Breite:
9.4 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
1 S
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
31.7 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Gewichtseinheit:
0.105822 oz
Tags
PD55003, PD5500, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Rf Fet Transistor, 40 V, 2.5 A, 31.7 W, 1 Ghz, Powerso-10Rf Rohs Compliant: Yes
***ure Electronics
PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF
***p One Stop
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***roFlash
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***ical
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***icroelectronics SCT
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
RF MOSFET Transistors POWER R.F.
***ser
RF Integrated Circuits POWER R.F.
***ure Electronics
N-CHANNEL 40 V 0.045 Ohm 0.75 W Power Mosfet Surface Mount - SOT-23-3
***ical
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R
***enic
40V 3A 750mW 45m´Î@10V3.9A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
N Channel Mosfet, 40V, 3.9A, To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,40V,3A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3A; Power Dissipation Pd:750mW; Voltage Vgs Max:20V
***ure Electronics
Si2318DS Series 40 V 3.9 A 45 mOhm SMT N-Channel MOSFET - SOT-23-3
***roFlash
Small Signal Field-Effect Transistor, 3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:750mW; No. of Pins:3
***ark
Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V
***W
RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV
***itex
Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.1ohm; 1.3W; -55+150 deg.C; SMD; SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
*** Source Electronics
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
***ure Electronics
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***(Formerly Allied Electronics)
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
***roFlash
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
IRF7309PBF Dual N/P-channel MOSFET Transistor; 3 A; 4 A; 30 V; 8-Pin SOIC
***ure Electronics
Dual N/P-Channel 30 V 0.05/0.1 Ohm 25/25 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.4 W
***nell
MOSFET, DUAL NP LOGIC SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power D
***ark
Channel Type:dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:4A; Continuous Drain Current Id P Channel:3A; No. Of Pins:8Pins Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
PD55003-E
DISTI # V99:2348_18300543		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		81
  • 1000:$7.6550
  • 500:$8.2289
  • 100:$8.9300
  • 10:$10.3539
  • 1:$11.1910
PD55003-E
DISTI # 497-5297-5-ND		STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 1
Container: Tube		490In Stock
  • 1000:$7.9534
  • 500:$8.6710
  • 100:$9.7474
  • 50:$11.0630
  • 1:$12.5600
PD55003-E
DISTI # 25093464		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		257
  • 250:$6.0475
  • 100:$6.2179
  • 50:$6.3981
  • 25:$6.5891
  • 2:$6.7918
PD55003-E
DISTI # 25960771		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		81
  • 10:$10.3539
  • 1:$11.1910
PD55003-E
DISTI # PD55003-E		STMicroelectronicsTrans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube (Alt: PD55003-E)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 4
  • 1:€11.0600
  • 5:€9.8800
  • 10:€8.7100
  • 50:€8.2000
  • 100:€7.6800
  • 250:€6.5100
PD55003-E
DISTI # PD55003-E		STMicroelectronicsTrans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD55003-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 486
  • 400:$8.8900
  • 800:$8.4900
  • 1600:$8.0900
  • 2400:$7.6900
  • 4000:$7.5900
PD55003-E
DISTI # 06X0639		STMicroelectronicsTrans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bulk (Alt: 06X0639)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$12.5600
  • 10:$11.5500
  • 25:$11.0700
  • 50:$10.4100
  • 100:$9.7500
  • 250:$9.2700
PD55003-E
DISTI # 06X0639		STMicroelectronicsRF FET Transistor, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF RoHS Compliant: Yes170
  • 1:$12.5600
  • 10:$11.5500
  • 25:$11.0700
  • 50:$10.4100
  • 100:$9.7500
  • 250:$9.2700
PD55003-E
DISTI # 511-PD55003-E		STMicroelectronicsRF MOSFET Transistors RF POWER TRANS
RoHS: Compliant		373
  • 1:$12.5600
  • 10:$11.5500
  • 25:$11.0700
  • 100:$9.7500
  • 250:$9.2700
PD55003TR-E
DISTI # 511-PD55003TR-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
  • 1:$12.5600
  • 10:$11.5500
  • 25:$11.0700
  • 100:$9.7500
  • 250:$9.2700
  • 600:$8.6800
PD55003-E
DISTI # PD55003-E		STMicroelectronicsTransistor: N-MOSFET,unipolar,RF,40V,2.5A,31.7W,SO10RF,SMT7
  • 1:$14.2700
  • 3:$12.3000
  • 10:$9.8800
  • 50:$8.8800
PD55003-E
DISTI # PD55003-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 400:$8.6800
  • 500:$8.2200
  • 1000:$7.8000
PD55003-E
DISTI # 2341739		STMicroelectronicsMOSFET, RF, N-CH, 40V, 2.5A, POWERSO
RoHS: Compliant		3930
  • 1:£11.2600
  • 5:£9.6000
  • 10:£8.4500
  • 50:£7.9600
  • 100:£7.4500
PD55003-E
DISTI # 2341739		STMicroelectronicsMOSFET, RF, N-CH, 40V, 2.5A, POWERSO
RoHS: Compliant		3930
  • 1:$19.8800
  • 10:$18.2900
  • 25:$17.5200
  • 100:$15.4300
  • 250:$14.6700
PD55003-E
DISTI # C1S730200315308		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		81
  • 10:$10.3539
  • 1:$11.1910
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Mfr.#: X-NUCLEO-IHM02A1

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Verfügbarkeit
Aktie:
219
Auf Bestellung:
2202
Menge eingeben:
Der aktuelle Preis von PD55003-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,56 $
12,56 $
10
11,55 $
115,50 $
25
11,07 $
276,75 $
100
9,75 $
975,00 $
250
9,27 $
2 317,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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