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RN1313(TE85L,F)

RN1313(TE85L,F)
Mfr. #:
RN1313(TE85L,F)
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RN1313(TE85L,F) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
47 kOhms
Montageart:
SMD/SMT
Paket / Koffer:
SC-70
DC-Kollektor/Basisverstärkung hfe Min:
120
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
100 mA
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
100 mW
Maximale Betriebstemperatur:
+ 125 C
Serie:
RN1313
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
700
Höhe:
0.9 mm
Länge:
2 mm
Breite:
1.25 mm
Marke:
Toshiba
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000988 oz
Tags
RN1313(T, RN1313, RN131, RN13, RN1
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***S
French Electronic Distributor since 1988
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***et
X34 Pb-F USM TRANSISTOR Pd 100mW F 250Mhz (LF)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
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Trans GP BJT NPN 50V 0.1A 3-Pin UMT3F T/R
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TRANS, NPN, 50V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
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TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF
***ark
TRANSISTOR; DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min Hfe:100; ft,;RoHS Compliant: Yes
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DTC114TUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
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Trans Digital BJT NPN 50V 100mA 3-Pin UMTF T/R
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Transistor; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA; Base Input
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TRANSISTOR;DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:10mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min Hfe:100; ft,;RoHS Compliant: Yes
***nell
TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC114T Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 10mA; DC Collector Current: 10mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
Teil # Mfg. Beschreibung Aktie Preis
RN1313(TE85L,F)
DISTI # RN1313(TE85LF)CT-ND		Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2965In Stock
  • 1000:$0.0552
  • 500:$0.0811
  • 250:$0.0952
  • 100:$0.1514
  • 25:$0.1948
  • 10:$0.2700
  • 1:$0.3000
RN1313(TE85L,F)
DISTI # RN1313(TE85LF)DKR-ND		Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    RN1313(TE85L,F)
    DISTI # RN1313(TE85LF)TR-ND    		Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
    RoHS: Compliant
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
      RN1313(TE85L,F)
      DISTI # RN1313(TE85L,F)      		Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin USM T/R - Tape and Reel (Alt: RN1313(TE85L,F))
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
        RN1313(TE85L,F)
        DISTI # 757-RN1313(TE85L,F)        		Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
        RoHS: Compliant        		6000
        • 1:$0.2900
        • 10:$0.1860
        • 100:$0.0780
        • 1000:$0.0530
        • 3000:$0.0400
        RN1313(TE85L,F)Toshiba America Electronic Components 3678
          Bild Teil # Beschreibung
          RN1313(TE85L,F)

          Mfr.#: RN1313(TE85L,F)

          OMO.#: OMO-RN1313-TE85L-F-

          		 Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
          RN1313(TE85L,F)

          Mfr.#: RN1313(TE85L,F)

          OMO.#: OMO-RN1313-TE85L-F--TOSHIBA-SEMICONDUCTOR-AND-STOR

          		 Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
          RN1313(TE85LF)CT-ND

          Mfr.#: RN1313(TE85LF)CT-ND

          OMO.#: OMO-RN1313-TE85LF-CT-ND-1190

          		 Neu und Original
          RN1313(TE85LF)DKR-ND

          Mfr.#: RN1313(TE85LF)DKR-ND

          OMO.#: OMO-RN1313-TE85LF-DKR-ND-1190

          		 Neu und Original
          RN1313(TE85LF)TR-ND

          Mfr.#: RN1313(TE85LF)TR-ND

          OMO.#: OMO-RN1313-TE85LF-TR-ND-1190

          		 Neu und Original
          RN1313(TE85LF)

          Mfr.#: RN1313(TE85LF)

          OMO.#: OMO-RN1313-TE85LF--1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1989
          Menge eingeben:
          Der aktuelle Preis von RN1313(TE85L,F) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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