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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IGB01N120H2ATMA1 DISTI # IGB01N120H2ATMA1TR-ND | Infineon Technologies AG | IGBT 1200V 3.2A 28W TO263-3-2 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IGB01N120H2XT DISTI # IGB01N120H2ATMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB01N120H2ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IGB01N120H2 DISTI # 726-IGB01N120H2 | Infineon Technologies AG | IGBT Transistors HIGH SPEED 2 TECH 1200V 1A RoHS: Compliant | 0 | |
| IGB01N120H2ATMA1 DISTI # N/A | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS | 0 | |
| IGB01N120H2ATMA1 | Infineon Technologies AG | Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin RoHS: Compliant | 1000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IGB01N120H2 OMO.#: OMO-IGB01N120H2 |
IGBT Transistors HIGH SPEED 2 TECH 1200V 1A |
|
Mfr.#: IGB01N120H2ATMA1 OMO.#: OMO-IGB01N120H2ATMA1 |
IGBT Transistors IGBT PRODUCTS |
|
Mfr.#: IGB01N120H2ATMA1 |
IGBT 1200V 3.2A 28W TO263-3-2 |
|
|
Mfr.#: IGB01N120H2XT OMO.#: OMO-IGB01N120H2XT-1190 |
Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB01N120H2ATMA1) |
|
|
Mfr.#: IGB01N120H2 OMO.#: OMO-IGB01N120H2-126 |
IGBT Transistors HIGH SPEED 2 TECH 1200V 1A |
