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DMN65D8LDW-7

DMN65D8LDW-7
Mfr. #:
DMN65D8LDW-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN65D8LDW-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN65D8LDW-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
200 mA
Rds On - Drain-Source-Widerstand:
6 Ohms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
870 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
400 mW
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN63
Transistortyp:
2 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
80 mS
Abfallzeit:
6.3 ns
Produktart:
MOSFET
Anstiegszeit:
3.2 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
3.3 ns
Gewichtseinheit:
0.000212 oz
Tags
DMN65D8LDW-7, DMN65D8LD, DMN65D8, DMN65, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 60V 200mA 6-Pin SOT-363 T/R
*** Source Electronics
MOSFET 2N-CH 60V 0.18A SOT363 / Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R
***ure Electronics
Dual N-Channel 60 V 6 Ohm Surface Mount Enhancement Mode Mosfet - SOT363
***nell
MOSFET, DUAL N-CH, 60V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 180mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***essParts.Net
DIODES INC 2N7002DW-7-F / MOSFET N-CHAN DUAL 60V SOT363 ROHS Date Code 0810
***et Europe
Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R
***ure Electronics
2N7002DW Series 60 V 7.5 Ohm Dual N-Channel Enhancement Mode Transistor SOT-363
***ark
MOSFET, N CHANNEL, DUAL, 60 V, 800mA, SOT-363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:115mA; Continuous Drain Current Id P Channel:-RoHS Compliant: Yes
***nell
MOSFET, N CH, 60V, 0.115A, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 115mA; Current Id Max: 800mA; Drain Source Voltage Vds, N Channel: 60V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 3.2ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
***et Europe
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R
*** Source Electronics
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363
***ment14 APAC
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On
***nell
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et Japan
Transistor MOSFET Array Dual P-CH 50V 130mA 6-Pin SOT-363 T/R
***ure Electronics
BSS84DW Series 50 V 10 Ohm Dual P-Channel Enhancement Mode Transistor SOT-363
***ment14 APAC
MOSFET P-CHANNEL SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-130mA; Source Voltage Vds:-50V; On Resistance
***nell
MOSFET P-CHANNEL SOT-363; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.6V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, P Channel: -130mA; Current Id Max: -130mA; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 6ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -50V; Voltage Vgs Rds on Measurement: -5V
***ical
Trans MOSFET P-CH 30V 1.5A Automotive 6-Pin SOT-363 T/R
***ark
Mosfet, P-Ch, Aec-Q101, 30V, -1.5A; Transistor Polarity:p Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.107Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***ical
Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
***ment14 APAC
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Source Voltage Vds:30V; On Resistance
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)
***emi
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363
***ser
MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM
***Yang
Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel
***ponent Stockers USA
1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 1.8A SC88/SC70-6
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Teil # Mfg. Beschreibung Aktie Preis
DMN65D8LDW-7
DISTI # V72:2272_06697538		Zetex / Diodes IncTrans MOSFET N-CH 60V 0.2A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		3000
  • 3000:$0.0506
DMN65D8LDW-7
DISTI # DMN65D8LDW-7DITR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 0.18A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.0751
DMN65D8LDW-7
DISTI # DMN65D8LDW-7DICT-ND		Diodes IncorporatedMOSFET 2N-CH 60V 0.18A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.0880
  • 500:$0.1128
  • 100:$0.1944
  • 10:$0.3250
  • 1:$0.4500
DMN65D8LDW-7
DISTI # DMN65D8LDW-7DIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 0.18A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.0880
  • 500:$0.1128
  • 100:$0.1944
  • 10:$0.3250
  • 1:$0.4500
DMN65D8LDW-7
DISTI # DMN65D8LDW-7		Diodes IncorporatedTrans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R (Alt: DMN65D8LDW-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 3000:$0.0827
  • 6000:$0.0790
  • 9000:$0.0757
  • 15000:$0.0736
  • 30000:$0.0726
  • 75000:$0.0707
  • 150000:$0.0689
DMN65D8LDW-7
DISTI # DMN65D8LDW-7		Diodes IncorporatedTrans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN65D8LDW-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0388
  • 6000:$0.0369
  • 12000:$0.0352
  • 18000:$0.0336
  • 30000:$0.0329
DMN65D8LDW-7
DISTI # 82Y6583		Diodes IncorporatedMOSFET, DUAL N-CH, 60V, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:180mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power , RoHS Compliant: Yes1534
  • 1:$0.3630
  • 10:$0.2370
  • 25:$0.1940
  • 50:$0.1500
  • 100:$0.1060
  • 250:$0.0990
  • 500:$0.0910
  • 1000:$0.0840
DMN65D8LDW-7
DISTI # 70551253		Diodes IncorporatedDual N-Ch Enhancement MOSFET SOT-363
RoHS: Compliant		0
  • 500:$0.0910
  • 1000:$0.0670
  • 1500:$0.0580
  • 3000:$0.0530
DMN65D8LDW-7
DISTI # 522-DMN65D8LDW-7		Diodes IncorporatedMOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
RoHS: Compliant		0
  • 1:$0.3500
  • 10:$0.2260
  • 100:$0.0970
  • 1000:$0.0750
  • 3000:$0.0570
  • 9000:$0.0510
DMN65D8LDW-7
DISTI # 8222602P		Zetex / Diodes IncDUAL N-CH ENHANCEMENT MOSFET SOT-363, RL2400
  • 500:£0.0670
  • 1000:£0.0540
  • 1500:£0.0470
  • 3000:£0.0430
DMN65D8LDW-7Diodes IncorporatedINSTOCK32630
    DMN65D8LDW-7
    DISTI # 2543547    		Diodes IncorporatedMOSFET, DUAL N-CH, 60V, SOT363
    RoHS: Compliant    		1534
    • 1:$0.5540
    • 10:$0.3590
    • 100:$0.1540
    • 1000:$0.1190
    • 3000:$0.0910
    • 9000:$0.0810
    DMN65D8LDW-7
    DISTI # 2543547    		Diodes IncorporatedMOSFET, DUAL N-CH, 60V, SOT363
    RoHS: Compliant    		1534
    • 5:£0.2280
    • 25:£0.2210
    • 100:£0.0887
    • 250:£0.0852
    • 500:£0.0782
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    Verfügbarkeit
    Aktie:
    39
    Auf Bestellung:
    2022
    Menge eingeben:
    Der aktuelle Preis von DMN65D8LDW-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,35 $
    0,35 $
    10
    0,23 $
    2,26 $
    100
    0,10 $
    9,70 $
    1000
    0,08 $
    75,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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