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IRFL4105TRPBF

IRFL4105TRPBF
Mfr. #:
IRFL4105TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 55V 3.7A 45mOhm 23nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFL4105TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFL4105TRPBF DatasheetIRFL4105TRPBF Datasheet (P4-P6)IRFL4105TRPBF Datasheet (P7-P9)IRFL4105TRPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
3.7 A
Rds On - Drain-Source-Widerstand:
45 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
23 nC
Pd - Verlustleistung:
2.1 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.6 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
3.5 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001551996
Gewichtseinheit:
0.003951 oz
Tags
IRFL4105TRP, IRFL4105T, IRFL41, IRFL4, IRFL, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 0.045 Ohm 23 nC HEXFET® Power Mosfet - SOT-223
*** Source Electronics
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) | MOSFET N-CH 55V 3.7A SOT223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***(Formerly Allied Electronics)
MOSFET, 55V, 3.7A, 45 mOhm, 23 nC Qg, SOT-223
***p One Stop Global
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 Tube
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
***ark
Mosfet Transistor, N Channel, 4 A, 55 V, 75 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 55 V 0.075 Ohm 18.3 nC HEXFET® Power Mosfet - SOT-223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
*** electronic
Transistor MOSFET N-Ch. 2,8A/55V SOT223
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
***ical
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 Tube
***nell
MOSFET, N, 55V, 4A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***emi
Power MOSFET, N-Channel, QFET®, 60 V, 2.8 A, 140 mΩ, SOT-223
***ure Electronics
N-Channel 60 V 0.14 Ohm Surface Mount Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***nell
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.11ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***(Formerly Allied Electronics)
IRFL014PBF N-channel MOSFET Transistor, 2.7 A, 60 V, 4-Pin SOT-223
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin (3+Tab) SOT-223
***ment14 APAC
MOSFET, N, 60V, 2.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Source Voltage Vds:60V; On Resistance
***nell
MOSFET, N, 60V, 2.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 2.7A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 22A; SMD Marking: FL014; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Teil # Mfg. Beschreibung Aktie Preis
IRFL4105TRPBF
DISTI # V72:2272_13890691		Infineon Technologies AGTrans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R222
  • 250:$0.3861
  • 100:$0.4025
  • 25:$0.5553
  • 10:$0.5578
  • 1:$0.6385
IRFL4105TRPBF
DISTI # IRFL4105TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 55V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		982In Stock
  • 1000:$0.4696
  • 500:$0.5755
  • 100:$0.7610
  • 10:$0.9730
  • 1:$1.1100
IRFL4105TRPBF
DISTI # IRFL4105TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 55V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		982In Stock
  • 1000:$0.4696
  • 500:$0.5755
  • 100:$0.7610
  • 10:$0.9730
  • 1:$1.1100
IRFL4105TRPBF
DISTI # IRFL4105TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 55V 3.7A SOT223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4173
IRFL4105TRPBF
DISTI # 30354157		Infineon Technologies AGTrans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R222
  • 250:$0.3861
  • 100:$0.4025
  • 27:$0.5553
IRFL4105TRPBF
DISTI # IRFL4105TRPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRFL4105TRPBF)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 32500
  • 2500:$0.3089
  • 5000:$0.3079
  • 10000:$0.3079
  • 15000:$0.3069
  • 25000:$0.3059
IRFL4105TRPBF
DISTI # IRFL4105TRPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: IRFL4105TRPBF)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    IRFL4105TRPBF
    DISTI # SP001551996    		Infineon Technologies AGTrans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: SP001551996)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.2729
    • 5000:€0.2719
    • 10000:€0.2709
    • 15000:€0.2709
    • 25000:€0.2699
    IRFL4105TRPBF
    DISTI # 13AC9117    		Infineon Technologies AGMOSFET, N-CH, 55V, 5.2A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes0
    • 1:$0.8800
    • 10:$0.7250
    • 25:$0.6390
    • 50:$0.5540
    • 100:$0.4680
    • 250:$0.4370
    • 500:$0.4060
    • 1000:$0.3750
    IRFL4105TRPBF.
    DISTI # 26AC0511    		Infineon Technologies AGPLANAR_MOSFETS , ROHS COMPLIANT: YES0
    • 1:$0.3090
    • 5000:$0.3080
    • 15000:$0.3070
    • 25000:$0.3060
    IRFL4105TRPBF
    DISTI # 70017738    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.045Ohm,ID 3.7A,SOT-223,PD 1W,VGS +/-20V
    RoHS: Compliant    		0
    • 20:$0.7500
    IRFL4105TRPBF
    DISTI # 942-IRFL4105TRPBF    		Infineon Technologies AGMOSFET MOSFT 55V 3.7A 45mOhm 23nC
    RoHS: Compliant    		8117
    • 1:$0.8800
    • 10:$0.7250
    • 100:$0.4680
    • 1000:$0.3750
    • 2500:$0.3160
    IRFL4105TRPBFInternational Rectifier 1680
    • 1671:$0.4191
    • 335:$0.4790
    • 1:$1.1975
    IRFL4105TRPBF
    DISTI # 8273994P    		Infineon Technologies AGHEXFET N-CH MOSFET 5.2A 55V SOT-223, RL820
    • 200:£0.3390
    IRFL4105TRPBF
    DISTI # TMOSS6869    		Infineon Technologies AGMOSFET55V3,7A SOT223
    RoHS: Compliant    		Stock DE - 500Stock US - 0
    • 2500:$0.3755
    • 5000:$0.3540
    • 7500:$0.3326
    • 12500:$0.3004
    • 17500:$0.2897
    IRFL4105TRPBF
    DISTI # IRFL4105PBF-GURT    		Infineon Technologies AGN-Ch 55V 5,2A 2,1W 0,045R SOT223
    RoHS: Compliant    		2450
    • 50:€0.2770
    • 100:€0.2370
    • 500:€0.2170
    • 2500:€0.2090
    IRFL4105TRPBF
    DISTI # 2725946    		Infineon Technologies AGMOSFET, N-CH, 55V, 5.2A, SOT-223
    RoHS: Compliant    		430
    • 5:£0.5740
    • 25:£0.5660
    • 100:£0.3460
    • 250:£0.3120
    • 500:£0.2780
    IRFL4105TRPBF
    DISTI # XSLY00000000970    		INFINEON/IRSOT-223
    RoHS: Compliant    		1800
    • 2500:$0.3143
    IRFL4105TRPBF
    DISTI # C1S322000491618    		Infineon Technologies AGTrans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R
    RoHS: Compliant    		322
    • 250:$0.3922
    • 100:$0.4025
    • 25:$0.5553
    • 10:$0.5578
    IRFL4105TRPBF
    DISTI # 2725946    		Infineon Technologies AGMOSFET, N-CH, 55V, 5.2A, SOT-223
    RoHS: Compliant    		0
    • 1:$1.4000
    • 10:$1.1500
    • 100:$0.7410
    • 1000:$0.5940
    • 2500:$0.5000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1993
    Menge eingeben:
    Der aktuelle Preis von IRFL4105TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,87 $
    0,87 $
    10
    0,72 $
    7,25 $
    100
    0,47 $
    46,80 $
    1000
    0,38 $
    375,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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