BSC097N06NSATMA1

Mfr. #:: BSC097N06NSATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 60V 46A TDSON-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC097N06NSATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BSC097N06NSATMA1 Datasheet BSC097N06NSATMA1 Datasheet (P4-P6)BSC097N06NSATMA1 Datasheet (P7-P9)BSC097N06NSATMA1 Datasheet (P10)
ECAD Model:
Mehr Informationen:: BSC097N06NSATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 46 A

Rds On - Drain-Source-Widerstand:: 8 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 15 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 36 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.27 mm

Länge:: 5.9 mm

Serie:: OptiMOS 5

Transistortyp:: 1 N-Channel

Breite:: 5.15 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 24 S

Abfallzeit:: 2 ns

Produktart:: MOSFET

Anstiegszeit:: 2 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 10 ns

Typische Einschaltverzögerungszeit:: 6 ns

Teil # Aliase:: BSC097N06NS SP001067004

Gewichtseinheit:: 0.003527 oz

Tags: BSC097, BSC09, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
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Step2:
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BSC097N06NSATMA1 Beschreibung

***ure Electronics: Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8

***ark: Mosfet, N-Ch, 60V, 46A, Pg-Tdson-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC097N06NSATMA1

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 46A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 36W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: Single N-Channel Power MOSFET 60V, 50A, 9.3mΩ Power MOSFET 60V, 50A, 9.3 mOhm, Single N-Channel, u8FL, Logic Level

***sible Micro: Transistor, MOSFET, N-CH, 60V, 13A, WDFN, SMD

***ical: Trans MOSFET N-CH 60V 13A 8-Pin WDFN EP T/R

*** Stop Electro: Power Field-Effect Transistor, 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***Yang: T6 60V NCH LL IN U8FL - Tape and Reel

***ark: Mosfet, N-Ch, 60V, 50A, Wdfn-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes

***ure Electronics: Single N-Channel 60 V 8.8 mOhm 36 nC OptiMOS Power Mosfet - TO-252-3

*** Source Electronics: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / OptiMOS(TM)3 Power-Transistor

***icontronic: Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, D2PAK

***ure Electronics: FQB50N06L Series 60 V 52.4 A 21 mOhm SMT N-Channel QFET Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 60V 52.4A 3-Pin (2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 60V, 52.4A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 121W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ineon SCT: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

***ical: Trans MOSFET N-CH Si 60V 43A Automotive 3-Pin(2+Tab) DPAK Tube

***ure Electronics: Single N-Channel 60 V 15.8 mOhm 22 nC Automotive HEXFET® Power Mosfet - DPAK

***SIT Distribution GmbH: Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ark: MOSFET, N CH, 60V, 43A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:71W; No. of Pins:3 ;RoHS Compliant: Yes

***emi: PowerTrench® MOSFET, N-Channel, 60 V,50 A, 10 mΩ

***ical: Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R

***el Electronic: FAIRCHILD SEMICONDUCTOR FDD86580_F085 MOSFET Transistor, N Channel, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 VNew

***ure Electronics: Single N-Channel 55 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 55V 47A 3-Pin (2+Tab) D2PAK T/R

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 110 W

***eco: IRLZ44NSTRLPBF,MOSFET, 55V, 47 A, 22 MOHM, 32 NC QG, LOGIC L

***SIT Distribution GmbH: Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:47A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes |Infineon IRLZ44NSTRLPBF.

BSC097N06NSATMA1 Mehr Informationen

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC097N06NSATMA1 DISTI # V72:2272_06384807	Infineon Technologies AG	Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R RoHS: Compliant	4575	3000:$0.3684 1000:$0.3721 500:$0.4479 250:$0.4984 100:$0.5470 25:$0.6311 10:$0.6755 1:$0.7455
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 46A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4970In Stock	1000:$0.4249 500:$0.5382 100:$0.6940 10:$0.8780 1:$0.9900
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 46A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4970In Stock	1000:$0.4249 500:$0.5382 100:$0.6940 10:$0.8780 1:$0.9900
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 46A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.3658
BSC097N06NSATMA1 DISTI # 31084170	Infineon Technologies AG	Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R RoHS: Compliant	4575	3000:$0.3684 1000:$0.3721 500:$0.4479 250:$0.4984 100:$0.5470 25:$0.6310 23:$0.6755
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC097N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2879 10000:$0.2769 20000:$0.2669 30000:$0.2579 50000:$0.2539
BSC097N06NSATMA1 DISTI # 97Y1250	Infineon Technologies AG	MOSFET, N-CH, 60V, 46A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:46A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	1:$0.8300 10:$0.7000 25:$0.6460 50:$0.5920 100:$0.5380 250:$0.5070 500:$0.4760 1000:$0.3750
BSC097N06NSATMA1 DISTI # 726-BSC097N06NSATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 46A TDSON-8 RoHS: Compliant	4602	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 5000:$0.3330
BSC097N06NS DISTI # 726-BSC097N06NS	Infineon Technologies AG	MOSFET N-Ch 60V 46A TDSON-8 RoHS: Compliant	0	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 5000:$0.3330
BSC097N06NSATMA1	Infineon Technologies AG	Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant	5000Reel	5000:$0.3100
BSC097N06NSATMA1 DISTI # 1109115P	Infineon Technologies AG	MOSFET N-CHAN OPTIMOS 60V 46A TDSON8, RL	825	50:£0.4590 250:£0.3890 500:£0.3440 1250:£0.2870
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,46A,36W,PG-TDSON-8	2250	1:$0.6244 3:$0.5530 10:$0.4649 100:$0.4167 1000:$0.3880
BSC097N06NSATMA1 DISTI # 2617474	Infineon Technologies AG	MOSFET, N-CH, 60V, 46A, PG-TDSON-8 RoHS: Compliant	0	1:$1.5800 10:$1.4000 100:$1.1100 500:$0.8580 1000:$0.6780
BSC097N06NSATMA1 DISTI # 2617474	Infineon Technologies AG	MOSFET, N-CH, 60V, 46A, PG-TDSON-8 RoHS: Compliant	0	5:£0.6020 25:£0.4640 100:£0.4110 250:£0.3930 500:£0.3470

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von BSC097N06NSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,82 $~~; ~~0,82 $~~

10: ~~0,70 $~~; ~~7,00 $~~

100: ~~0,54 $~~; ~~53,80 $~~

500: ~~0,48 $~~; ~~238,00 $~~

1000: ~~0,38 $~~; ~~375,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC097N06NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes