NDH8304P

NDH8304P
Mfr. #:
NDH8304P
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET Dual P-Ch FET Enhancement Mode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NDH8304P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NDH8304P DatasheetNDH8304P Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SSOT-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
2.7 A
Rds On - Drain-Source-Widerstand:
61 mOhms
Vgs - Gate-Source-Spannung:
8 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
800 mW
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.02 mm
Länge:
4.06 mm
Produkt:
MOSFET Kleinsignal
Transistortyp:
2 P-Channel
Typ:
MOSFET
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
750
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
78 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
NDH8304P_NL
Gewichtseinheit:
0.001467 oz
Tags
NDH8304, NDH830, NDH83, NDH8, NDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Dual P-Channel Enhancement Mode Field Effect Transistor | MOSFET 2P-CH 20V 2.7A SSOT8
***el Electronic
Trans MOSFET P-CH 20V 2.7A 8-Pin SuperSOT T/R
***ser
MOSFETs Dual P-Ch FET Enhancement Mode
***et
20V DUAL P-CH. FET, 70 MO, SSO
***nell
MOSFET, DUAL PP SUPERSOT-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Current, Id Cont:2.7A; Resistance, Rds On:0.095ohm; Case Style:SuperSOT-8; Termination Type:SMD; Current, Idm Pulse:10A; Depth, External:4.06mm; Length / Height, External:1.02mm; Marking, SMD:NDH8304P; Pins, No. of:8; Power Dissipation:0.8W; Power, Pd:0.8W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:-2.7V; Width, External:4.55mm
Teil # Mfg. Beschreibung Aktie Preis
NDH8304P
DISTI # NDH8304P-ND
ON SemiconductorMOSFET 2P-CH 20V 2.7A SSOT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    NDH8304PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    78203
    • 1000:$0.6300
    • 500:$0.6700
    • 100:$0.6900
    • 25:$0.7200
    • 1:$0.7800
    NDH8304P
    DISTI # 512-NDH8304P
    ON SemiconductorMOSFET Dual P-Ch FET Enhancement Mode
    RoHS: Compliant
    0
      NDH8304PFairchild Semiconductor Corporation2700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET2970
      • 1581:$0.4455
      • 354:$0.5063
      • 1:$1.6200
      Bild Teil # Beschreibung
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      Mfr.#: NDH8302P

      OMO.#: OMO-NDH8302P-1190

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      OMO.#: OMO-NDH8304P-NL-1190

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      7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von NDH8304P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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