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IRFB3207PBF

IRFB3207PBF
Mfr. #:
IRFB3207PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB3207PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB3207PBF DatasheetIRFB3207PBF Datasheet (P4-P6)IRFB3207PBF Datasheet (P7-P9)IRFB3207PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
3.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
180 nC
Pd - Verlustleistung:
330 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001572410
Gewichtseinheit:
0.211644 oz
Tags
IRFB3207P, IRFB3207, IRFB320, IRFB32, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.6Milliohms;ID 180A;TO-220AB;PD 330W;-55de
***ark
TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,180A I(D),TO-220AB
***eco
Transistor MOSFET N-Channel 75V 170A 330W Through Hole TO-220AB
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:720A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFB3207PBF
DISTI # 30312898		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB Tube1900
  • 3500:$1.7184
  • 1750:$1.8144
  • 450:$1.9104
  • 350:$2.0064
IRFB3207PBF
DISTI # IRFB3207PBF-ND		Infineon Technologies AGMOSFET N-CH 75V 180A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1418In Stock
  • 1000:$1.7070
  • 500:$2.0226
  • 100:$2.5485
  • 50:$2.8114
  • 1:$3.4400
IRFB3207PBF
DISTI # C1S322000488322		Infineon Technologies AGMOSFETs
RoHS: Compliant		1900
  • 1000:$1.6700
  • 500:$1.8000
  • 100:$2.3500
  • 50:$2.5600
  • 10:$3.1200
  • 1:$4.8100
IRFB3207PBF
DISTI # V99:2348_13891153		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB Tube377
  • 500:$1.4689
  • 100:$1.6742
  • 10:$1.9873
  • 1:$2.2418
IRFB3207PBF
DISTI # SP001572410		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB (Alt: SP001572410)
RoHS: Compliant
Min Qty: 1		Europe - 3200
  • 1:€2.3400
  • 10:€1.7600
  • 100:€1.4000
  • 250:€1.3600
  • 500:€1.3100
  • 1000:€1.2600
IRFB3207PBF
DISTI # IRFB3207PBF		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207PBF)
RoHS: Compliant
Min Qty: 350
Container: Tube		Americas - 0
  • 350:$1.2900
  • 450:$1.2900
  • 800:$1.1900
  • 1750:$1.1900
  • 3500:$1.0900
IRFB3207PBF
DISTI # IRFB3207PBF		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB (Alt: IRFB3207PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 1000:$1.4033
  • 2000:$1.3456
  • 3000:$1.3274
  • 5000:$1.2757
  • 10000:$1.2593
  • 25000:$1.2279
  • 50000:$1.1979
IRFB3207PBF
DISTI # 31K1926		Infineon Technologies AGN CHANNEL MOSFET, 75V, 180A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes41
  • 1:$3.1000
  • 10:$2.6400
  • 25:$2.4600
  • 50:$2.2900
  • 100:$2.1100
  • 250:$1.9800
  • 500:$1.8500
IRFB3207PBF.
DISTI # 27AC6763		Infineon Technologies AGN CHANNEL MOSFET, 75V, 180A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
  • 1:$3.1000
  • 10:$2.6400
  • 25:$2.4600
  • 50:$2.2900
  • 100:$2.1100
  • 250:$1.9800
  • 500:$1.8500
IRFB3207PBF
DISTI # 70016923		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 3.6 Milliohms,ID 180A,TO-220AB,PD 330W,-55de
RoHS: Compliant		0
  • 5:$6.8000
IRFB3207PBFInfineon Technologies AGSingle N-Channel 75 V 4.5 mOhm 260 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		6150Tube
  • 10:$1.5200
  • 100:$1.3700
  • 500:$1.2000
IRFB3207PBF
DISTI # 942-IRFB3207PBF		Infineon Technologies AGMOSFET MOSFT 75V 180A 4.5mOhm 180nC
RoHS: Compliant		1129
  • 1:$2.8200
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
IRFB3207PBFInternational Rectifier75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB5
  • 3:$4.1000
  • 1:$6.1500
IRFB3207PBF
DISTI # 8655796P		Infineon Technologies AGMOSFET N-CH 75V 170A HEXFET TO-220AB, TU50
  • 100:£1.7340
  • 250:£1.7000
  • 500:£1.5600
  • 1050:£1.4060
IRFB3207PBF
DISTI # IRFB3207PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,120A,330W,TO220AB89
  • 1:$2.9000
  • 3:$2.6100
  • 10:$2.1800
  • 100:$1.9000
IRFB3207PBF
DISTI # XSLY00000000907		INFINEON/IRTO-220AB
RoHS: Compliant		1044
  • 550:$1.2600
  • 1044:$1.1700
IRFB3207PBF
DISTI # XSKDRABV0021425		INF 
RoHS: Compliant		648
  • 300:$2.9200
  • 648:$2.6800
IRFB3207PBF
DISTI # 9052070		Infineon Technologies AGMOSFET, N, 75V, TO-220
RoHS: Compliant		1111
  • 1:£2.2000
  • 10:£1.8400
  • 100:£1.4600
  • 250:£1.4200
  • 500:£1.3900
IRFB3207PBF
DISTI # 9052070		Infineon Technologies AGMOSFET, N, 75V, TO-220
RoHS: Compliant		43
  • 1:$4.4700
  • 10:$3.8100
  • 100:$3.0400
  • 500:$2.7600
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRFB3207PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,81 $
2,81 $
10
2,39 $
23,90 $
100
1,91 $
191,00 $
500
1,67 $
835,00 $
1000
1,38 $
1 380,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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