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IRLHM620TR2PBF

IRLHM620TR2PBF
Mfr. #:
IRLHM620TR2PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLHM620TR2PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
2.5 mOhms
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
52 nC
Pd - Verlustleistung:
37 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.9 mm
Länge:
3.3 mm
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001558170
Tags
IRLHM620T, IRLHM62, IRLHM, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
***(Formerly Allied Electronics)
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
***et
Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R
***nell
MOSFET,W DIODE,N CH,20V,26A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V
*** Electronics
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***roFlash
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
*** Source Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
***et Europe
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***ment14 APAC
MOSFET,W DIODE,N CH,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V
***ernational Rectifier
20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package
***Yang
Transistor MOSFET Array Dual N-CH 20V 3.4A 6-Pin PQFN T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 45 mOhm 3.1 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ical
Trans MOSFET N-CH 20V 4.5A 6-Pin PQFN EP T/R
***nell
MOSFET, DUAL N CH, 20V, 3.4A, PQFN-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 6.6W; Transistor Case Style: PQFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
***ment14 APAC
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
IRLHM620TR2PBF
DISTI # IRLHM620TR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 20V 26A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRLHM620TR2PBF
    DISTI # IRLHM620TR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 20V 26A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRLHM620TR2PBF
      DISTI # 70019943      		Infineon Technologies AGMOSFET,20V,40A,2.5 MOHM,2.5V DRIVE CAPABLE,PQFN3.3X3.3
      RoHS: Compliant      		0
      • 800:$1.2700
      • 1600:$1.2450
      • 4000:$1.2070
      • 8000:$1.1560
      • 20000:$1.0800
      IRLHM620TR2PBF
      DISTI # 942-IRLHM620TR2PBF      		Infineon Technologies AGMOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
      RoHS: Compliant      		0
        IRLHM620TR2PBF
        DISTI # 1865592RL        		Infineon Technologies AGMOSFET,W DIODE,N CH,20V,26A,PQFN33
        RoHS: Compliant        		0
        • 1:$1.9600
        • 10:$1.6200
        • 100:$1.3100
        • 400:$1.1700
        • 800:$1.0400
        • 2400:$0.9640
        • 10000:$0.9310
        IRLHM620TR2PBF
        DISTI # 1865592        		Infineon Technologies AGMOSFET,W DIODE,N CH,20V,26A,PQFN33
        RoHS: Compliant        		0
        • 1:$1.9600
        • 10:$1.6200
        • 100:$1.3100
        • 400:$1.1700
        • 800:$1.0400
        • 2400:$0.9640
        • 10000:$0.9310
        Bild Teil # Beschreibung
        IRLHM620TRPBF

        Mfr.#: IRLHM620TRPBF

        OMO.#: OMO-IRLHM620TRPBF

        		 MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC
        IRLHM620TR2PBF

        Mfr.#: IRLHM620TR2PBF

        OMO.#: OMO-IRLHM620TR2PBF

        		 MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
        IRLHM620PBF

        Mfr.#: IRLHM620PBF

        OMO.#: OMO-IRLHM620PBF-1190

        		 Neu und Original
        IRLHM620TRPBF

        Mfr.#: IRLHM620TRPBF

        OMO.#: OMO-IRLHM620TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 20V 26A PQFN
        IRLHM620TRPBF_PSI , 2SK1

        Mfr.#: IRLHM620TRPBF_PSI , 2SK1

        OMO.#: OMO-IRLHM620TRPBF-PSI-2SK1-1190

        		 Neu und Original
        IRLHM620TRPBF-CUT TAPE

        Mfr.#: IRLHM620TRPBF-CUT TAPE

        OMO.#: OMO-IRLHM620TRPBF-CUT-TAPE-1190

        		 Neu und Original
        IRLHM620TR2PBF

        Mfr.#: IRLHM620TR2PBF

        OMO.#: OMO-IRLHM620TR2PBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von IRLHM620TR2PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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