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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFF221 | Harris Semiconductor | Power Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF RoHS: Not Compliant | 900 |
|
| IRFF221 | International Rectifier | Power Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF RoHS: Not Compliant | 4 |
|
| IRFF221 | New Jersey Semiconductor Products, Inc. | 1024 | ||
| IRFF221 | General Electric Company | MOSFET Transistor, N-Channel, TO-205AF | 25 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IRFF212R OMO.#: OMO-IRFF212R-1190 |
Neu und Original |
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Mfr.#: IRFF213 OMO.#: OMO-IRFF213-1190 |
Power Field-Effect Transistor, 1.8A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Mfr.#: IRFF221R OMO.#: OMO-IRFF221R-1190 |
Neu und Original |
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Mfr.#: IRFF312 OMO.#: OMO-IRFF312-1190 |
Neu und Original |
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Mfr.#: IRFF323 OMO.#: OMO-IRFF323-1190 |
Power Field-Effect Transistor, 2A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Mfr.#: IRFF333 OMO.#: OMO-IRFF333-1190 |
Neu und Original |
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Mfr.#: IRFF9121 OMO.#: OMO-IRFF9121-1190 |
Neu und Original |
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Mfr.#: IRFF9122 OMO.#: OMO-IRFF9122-1190 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Mfr.#: IRFF9220R OMO.#: OMO-IRFF9220R-1190 |
Neu und Original |
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Mfr.#: IRFF9322R OMO.#: OMO-IRFF9322R-1190 |
Neu und Original |