OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

ZXMHC10A07N8TC

ZXMHC10A07N8TC
Mfr. #:
ZXMHC10A07N8TC
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMHC10A07N8TC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
ZXMHC10A07N8TC Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
4 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
1 A, 850 mA
Rds On - Drain-Source-Widerstand:
700 mOhms, 1.45 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
2.9 nC, 3.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
870 mW
Aufbau:
Quad
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
ZXMHC10
Transistortyp:
2 N-Channel, 2 P-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
1.6 S, 1.2 S
Abfallzeit:
2.1 ns, 3.3 ns
Produktart:
MOSFET
Anstiegszeit:
1.5 ns, 2.1 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
4.1 ns, 5.9 ns
Typische Einschaltverzögerungszeit:
1.8 ns, 1.6 ns
Gewichtseinheit:
0.002610 oz
Tags
ZXMHC1, ZXMHC, ZXMH, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8
***ark
Mosfet, Dual, N/P-Ch, 100V, 0.8A Rohs Compliant: Yes |Diodes Inc. ZXMHC10A07N8TC
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra
***(Formerly Allied Electronics)
SI4056DY-T1-GE3 N-channel MOSFET Transistor; 11.1 A; 100 V; 8-Pin SOIC
***ure Electronics
Si4056DY Series 100 V 11.1 A 900 pF Surface Mount N-Channel Mosfet - SOIC-8
***nell
MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
***nsix Microsemi
Small Signal Field-Effect Transistor, 7.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***(Formerly Allied Electronics)
IRF7490PBF N-channel MOSFET Transistor; 5.4 A; 100 V; 8-Pin SOIC
***ark
Mosfet Transistor, N Channel, 5.4 A, 100 V, 39 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC T/R - Tape and Reel
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 11 / Rise Time ns = 4.2 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 22Milliohms; ID 6.9A; SO-8; PD 2.5W; VGS +/-20
***ure Electronics
IRF7473PbF Series N-Channel 100 V 26 mOhm 2.5 W HEXFET Power MOSFET - SOIC-8
***Yang
Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm;
***icontronic
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.9A; Fall Time tf: 11ns; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 55A; Rise Time: 20ns; Termination Type: Surface Mount Device; Voltage Vgs Max: 20V
***ponent Sense
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube / MOSFET N-CH 100V 7.3A 8-SOIC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.3A; On Resistance Rds(On):0.018Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***(Formerly Allied Electronics)
SI4100DY-T1-E3 N-channel MOSFET Module, 6.8 A, 100 V, 8-Pin SOIC
***et
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
***ure Electronics
N-CH MOSFET SO-8 100V 63MOHM @ 10V
***nsix Microsemi
Power Field-Effect Transistor, 4.4A I(D), 100V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ponent Sense
TRA FET SIG (MOSFET N 100V/6,8
***hard Electronics
VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
*** Source Electronics
MOSFET N-CH 100V 27.8A PPAK SO-8 / Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO T/R
***nell
MOSFET, N-CH, 100V, 27.8A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:27.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
ZXMH MOSFET H-Bridge Series
Diodes Incorporated ZXMH MOSFET H-Bridge series is a new generation complementary MOSFET H-Bridge featuring low on-resistance achievable with low gate drive. Diodes Incorporated ZXMH MOSFET H-Bridge devices feature 2 x N + 2 x P channels in a SOIC package and low voltage (Vgs = 4.5V) gate drive. Diodes Incorporated ZXMH MOSFET H-Bridge devices are ideal for DC motor control and DC-AC inverter applications.
Teil # Mfg. Beschreibung Aktie Preis
ZXMHC10A07N8TC
DISTI # V72:2272_06708045		Zetex / Diodes IncTrans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R
RoHS: Compliant		2449
  • 1000:$0.5018
  • 500:$0.6397
  • 250:$0.6546
  • 100:$0.7274
  • 25:$0.8751
  • 10:$1.0696
  • 1:$1.2416
ZXMHC10A07N8TC
DISTI # V36:1790_06708045		Zetex / Diodes IncTrans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R
RoHS: Compliant		0
  • 2500000:$0.4077
  • 1250000:$0.4080
  • 250000:$0.4345
  • 25000:$0.4820
  • 2500:$0.4900
ZXMHC10A07N8TC
DISTI # ZXMHC10A07N8DICT-ND		Diodes IncorporatedMOSFET 2N/2P-CH 100V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9132In Stock
  • 1000:$0.5407
  • 500:$0.6850
  • 100:$0.8292
  • 10:$1.0630
  • 1:$1.1900
ZXMHC10A07N8TC
DISTI # ZXMHC10A07N8DIDKR-ND		Diodes IncorporatedMOSFET 2N/2P-CH 100V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9132In Stock
  • 1000:$0.5407
  • 500:$0.6850
  • 100:$0.8292
  • 10:$1.0630
  • 1:$1.1900
ZXMHC10A07N8TC
DISTI # ZXMHC10A07N8DITR-ND		Diodes IncorporatedMOSFET 2N/2P-CH 100V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 5000:$0.4655
  • 2500:$0.4900
ZXMHC10A07N8TC
DISTI # 30883487		Zetex / Diodes IncTrans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R
RoHS: Compliant		2449
  • 15:$1.2416
ZXMHC10A07N8TC
DISTI # ZXMHC10A07N8TC		Diodes IncorporatedTrans MOSFET N/P-CH 100V 1A/0.85A 8-Pin SO T/R - Tape and Reel (Alt: ZXMHC10A07N8TC)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4469
  • 15000:$0.4559
  • 10000:$0.4779
  • 5000:$0.5019
  • 2500:$0.5269
ZXMHC10A07N8TC
DISTI # ZXMHC10A07N8TC		Diodes IncorporatedTrans MOSFET N/P-CH 100V 1A/0.85A 8-Pin SO T/R (Alt: ZXMHC10A07N8TC)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.4089
  • 15000:€0.4279
  • 10000:€0.4349
  • 5000:€0.4419
  • 2500:€0.4649
ZXMHC10A07N8TC
DISTI # 70438800		Diodes IncorporatedMOSFET Dual N/P-Ch 100V 1A/0.85A SOIC8
RoHS: Compliant		0
  • 25:$0.8800
  • 125:$0.7800
  • 500:$0.7000
  • 2500:$0.6400
ZXMHC10A07N8TC
DISTI # 522-ZXMHC10A07N8TC		Diodes IncorporatedMOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
RoHS: Compliant		9336
  • 1:$1.1400
  • 10:$0.9800
  • 100:$0.7530
  • 500:$0.6660
  • 1000:$0.5250
ZXMHC10A07N8TC
DISTI # 7515332P		Zetex / Diodes IncMOSFET DUAL N/P-CH 100V 1A/0.85A SOIC8, RL970
  • 50:£0.3340
ZXMHC10A07N8TC
DISTI # ZXMHC10A07N8TC		Diodes IncorporatedTransistor: N/P-MOSFET x2,unipolar,complementary,100/-100V2498
  • 500:$0.5500
  • 100:$0.6000
  • 25:$0.6500
  • 5:$0.7400
  • 1:$0.8300
Bild Teil # Beschreibung
GRF2013

Mfr.#: GRF2013

OMO.#: OMO-GRF2013

 RF Amplifier .05-8GHz NF 1.3dB Gain 18.5dB
TPS565208DDCR

Mfr.#: TPS565208DDCR

OMO.#: OMO-TPS565208DDCR

 Switching Voltage Regulators 4.5V to 17V, 5A Synch Step-Down VReg
74404086151

Mfr.#: 74404086151

OMO.#: OMO-74404086151

 Fixed Inductors WE-LQS 8065 150uH 20% 1.2A 355mOhm
RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

 Thick Film Resistors - SMD 1K OHM 1%
SHTC3

Mfr.#: SHTC3

OMO.#: OMO-SHTC3-SENSIRION

 Humidity/Temperature Sensor Digital Serial (I2C) 4-Pin DFN EP T/R
GRF2013

Mfr.#: GRF2013

OMO.#: OMO-GRF2013-1152

 RF Amplifier .05-8GHz NF 1.3dB Gain 18.5dB
TPS565208DDCR

Mfr.#: TPS565208DDCR

OMO.#: OMO-TPS565208DDCR-TEXAS-INSTRUMENTS

 IC REG BUCK ADJ 5A TSOT23-6
885012206071

Mfr.#: 885012206071

OMO.#: OMO-885012206071-WURTH-ELECTRONICS

 CAP CER 0.1UF 25V X7R 0603
RC0603JR-070RL

Mfr.#: RC0603JR-070RL

OMO.#: OMO-RC0603JR-070RL-YAGEO

 Thick Film Resistors - SMD ZERO OHM JUMPER
RC0603FR-0710KL

Mfr.#: RC0603FR-0710KL

OMO.#: OMO-RC0603FR-0710KL-YAGEO

 Thick Film Resistors - SMD 10K OHM 1%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von ZXMHC10A07N8TC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,14 $
1,14 $
10
0,98 $
9,80 $
100
0,75 $
75,30 $
500
0,67 $
333,00 $
1000
0,52 $
525,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top