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2N5686G

2N5686G
Mfr. #:
2N5686G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 50A 80V 300W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5686G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5686G Datasheet2N5686G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-204-2
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
80 V
Kollektor- Basisspannung VCBO:
80 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
1 V
Maximaler DC-Kollektorstrom:
50 A
Bandbreitenprodukt fT gewinnen:
2 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N5686
Höhe:
8.51 mm
Länge:
38.86 mm
Verpackung:
Tablett
Breite:
26.67 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
50 A
DC-Kollektor/Basisverstärkung hfe Min:
15
Pd - Verlustleistung:
300 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Gewichtseinheit:
0.488015 oz
Tags
2N568, 2N56, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5
***emi
50 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
***r Electronics
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
***ure Electronics
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
***el Electronic
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
***nell
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5
***emi
60 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***enic
80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS
***ark
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes
***nell
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V
***ical
Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***emi
High Power NPN Bipolar Power Transistor
***ark
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)
***emi
25 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 80 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA
***ment14 APAC
Transistor, NPN, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC
***nell
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Av Current Ic: 25A; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 25A; Current Ic Continuous a Max: 25A; Current Ic hFE: 10A; Device Marking: 2N5886G; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Power Dissipation Ptot Max: 200W; Voltage Vcbo: 80V
Teil # Mfg. Beschreibung Aktie Preis
2N5686G
DISTI # V99:2348_07290247		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant		100
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # V36:1790_07290247		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant		85
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # 2N5686GOS-ND		ON SemiconductorTRANS NPN 80V 50A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray		304In Stock
  • 500:$9.5369
  • 100:$10.7208
  • 10:$12.6940
  • 1:$13.8100
2N5686G
DISTI # 31062962		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant		100
  • 1:$9.5820
2N5686G
DISTI # 30223364		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant		85
  • 85:$9.5820
2N5686G
DISTI # 2N5686G		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 100
Container: Tray		Americas - 85
  • 100:$8.0900
  • 200:$8.0900
  • 400:$7.9900
  • 600:$7.8900
  • 1000:$7.6900
2N5686G
DISTI # 2N5686G		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 1
Container: Tray		Europe - 0
  • 1:€10.7755
  • 10:€9.9130
  • 100:€8.3720
2N5686G
DISTI # 26K5299		ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5299)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$13.1500
  • 10:$12.1000
  • 25:$11.5900
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 26K5299		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 80V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2MHz,Power Dissipation Pd:300mW,DC Collector Current:50A,DC Current Gain hFE:2hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes172
  • 1:$11.1800
  • 10:$10.2900
  • 25:$9.8600
  • 50:$9.2800
  • 100:$8.6900
  • 250:$8.2600
  • 500:$7.7300
2N5686G.
DISTI # 30AC3786		ON SemiconductorBIP T03 NPN 50A 80V , ROHS COMPLIANT: YES85
  • 1:$13.4100
  • 10:$12.3400
  • 25:$11.8200
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 70099763		ON SemiconductorTransistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5
RoHS: Compliant		0
  • 1:$13.0900
  • 100:$12.4400
  • 250:$11.8100
2N5686GON Semiconductor 
RoHS: Not Compliant		3067
  • 1000:$10.2400
  • 500:$10.7700
  • 100:$11.2200
  • 25:$11.7000
  • 1:$12.6000
2N5686G
DISTI # 863-2N5686G		ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Compliant		187
  • 1:$13.1500
  • 10:$12.1000
  • 20:$11.5900
  • 100:$10.2200
  • 200:$9.7100
  • 500:$9.0900
2N5686
DISTI # 863-2N5686		ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Not compliant		0
    2N5686G
    DISTI # 8624893    		ON SemiconductorBJT NPN 50A 80V TO-204-2, EA228
    • 1:£9.7000
    2N5686G
    DISTI # 2630288    		ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant    		253
    • 1:$20.8200
    • 10:$19.1500
    • 20:$18.3500
    • 100:$16.1700
    • 200:$15.3700
    • 500:$14.3900
    • 1000:$13.2000
    2N5686G
    DISTI # 2630288    		ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant    		262
    • 1:£10.5600
    • 5:£10.0500
    • 10:£8.8600
    • 50:£8.1400
    • 100:£7.4100
    Bild Teil # Beschreibung
    2N5684G

    Mfr.#: 2N5684G

    OMO.#: OMO-2N5684G

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    Verfügbarkeit
    Aktie:
    218
    Auf Bestellung:
    2201
    Menge eingeben:
    Der aktuelle Preis von 2N5686G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    14,99 $
    14,99 $
    10
    13,79 $
    137,90 $
    20
    13,21 $
    264,20 $
    100
    11,64 $
    1 164,00 $
    200
    11,07 $
    2 214,00 $
    500
    10,36 $
    5 180,00 $
    1000
    9,50 $
    9 500,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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