IRF2804STRLPBF

Mfr. #:: IRF2804STRLPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF2804STRLPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF2804STRLPBF Datasheet
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 270 A

Rds On - Drain-Source-Widerstand:: 2 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4 V

Qg - Gate-Ladung:: 240 nC

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 300 W

Aufbau:: Single

Verpackung:: Spule

Höhe:: 4.4 mm

Länge:: 10 mm

Transistortyp:: 1 N-Channel

Breite:: 9.25 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 130 S

Abfallzeit:: 130 ns

Produktart:: MOSFET

Anstiegszeit:: 120 ns

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001561584

Gewichtseinheit:: 0.139332 oz

Tags: IRF2804STRL, IRF2804ST, IRF2804S, IRF2804, IRF28, IRF2, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF2804STRLPBF Beschreibung

***ure Electronics: Single N-Channel 40 V 2 mOhm 160nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***Yang: Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 40V,RDS(ON) 1.5 Milliohms,ID 75A,D2Pak,PD 330W,VGS+/-20V

*** Electronic Components: RF Bipolar Transistors MOSFET MOSFET, 40V, 280A, 2.3 mOhm, 160 nC Qg, D2-Pak

***nell: MOSFET, N, 40V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipat

***ical: Trans MOSFET N-CH Si 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET, 40V, 80A, 2.5mΩ

***r Electronics: Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 40V 70A Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 70A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Nmos D2Pak 40V 4.5 Mohm / Reel

***i-Key: 70A, 40V, 9.9OHM, N-CHANNEL, MO

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 30V, 190A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:190A; Resistance, Rds On:0.0033ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:960A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0033ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:4V

***icroelectronics: N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

*** Source Electronics: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK

***ure Electronics: STB120 Series 40 V 80 A 4 mOhm 110 W 80 nC N-Channel MOSFET - D2PAK

***r Electronics: Power Field-Effect Transistor, 80A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: MOSFET, N CH, 40V, 80A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes

***icroelectronics: N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: STB80NF03L Series 30 V 0.0035 Ohm 80 A N-Ch. STripFET II Power Mosfet - D2PAK-3

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 40 V 3.1 mOhm 75 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

***(Formerly Allied Electronics): MOSFET; N Ch.; Automotive; 40V; 200A; 3.1 MOHM; 75 NC QG; D2-PAK; Pb-Free

***et Japan: Trans MOSFET N-CH 40V 200A 3-Pin(2+Tab) D2PAK T/R Pb free

***nell: MOSFET, N, 40V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissi

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF2804STRLPBF DISTI # V72:2272_13890724	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 280A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	801	500:$1.5138 250:$1.7469 100:$1.8815 25:$2.1006 10:$2.1085 1:$2.3857
IRF2804STRLPBF DISTI # IRF2804STRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 75A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4516In Stock	100:$2.5884 10:$3.1570 1:$3.5400
IRF2804STRLPBF DISTI # IRF2804STRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 75A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4516In Stock	100:$2.5884 10:$3.1570 1:$3.5400
IRF2804STRLPBF DISTI # IRF2804STRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 75A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	3200In Stock	800:$1.8388
IRF2804STRLPBF DISTI # 30312995	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 280A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	8000	800:$1.1904
IRF2804STRLPBF DISTI # 29518028	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 280A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	801	500:$1.5138 250:$1.7469 100:$1.8815 25:$2.1006 10:$2.1085 6:$2.3857
IRF2804STRLPBF DISTI # IRF2804STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF2804STRLPBF) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$1.3900 1600:$1.3900 3200:$1.3900 4800:$1.3900 8000:$1.3900
IRF2804STRLPBF DISTI # IRF2804STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF2804STRLPBF) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0
IRF2804STRLPBF DISTI # SP001561584	Infineon Technologies AG	Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001561584) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€1.4159 1600:€1.1799 3200:€1.0889 4800:€1.0109 8000:€0.9439
IRF2804STRLPBF DISTI # 13AC9173	Infineon Technologies AG	MOSFET, N-CH, 40V, 75A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes	286	1:$3.0600 10:$2.6400 25:$2.5400 50:$2.4300 100:$2.3300 250:$2.2300 500:$2.0200
IRF2804STRLPBF. DISTI # 27AC6866	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes	0
IRF2804STRLPBF DISTI # 70017653	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 1.8 Milliohms,ID 75A,D2Pak,PD 200W,VGS +/-20 RoHS: Compliant	0	800:$6.4260
IRF2804STRLPBF DISTI # 942-IRF2804STRLPBF	Infineon Technologies AG	MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg RoHS: Compliant	1630	1:$2.9500 10:$2.5100 100:$2.1800 250:$2.0700 500:$1.8500 800:$1.5700
IRF2804STRLPBF	Infineon Technologies AG	Single N-Channel 40V 2 mOhm 160 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	6400Reel	800:$1.3700
IRF2804STRLPBF DISTI # 9154948P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 40V 75A D2PAK, RL	905	50:£1.8140 100:£1.5780
IRF2804STRLPBF	International Rectifier	75A, 40V, 0.002OHM, N-CHANNEL, SI, POWER, MOSFET	62	37:$1.2600 11:$2.1000 1:$3.3600
IRF2804STRLPBF DISTI # IRF2804STRLPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,40V,280A,330W,D2PAK	503	1:$0.6700 3:$0.6633 10:$0.6620
IRF2804STRLPBF DISTI # TMOSP11729	Infineon Technologies AG	N-CH 40V 280A 2,3mOhm TO263 RoHS: Compliant	Stock DE - 0Stock US - 0	800:$1.8100 1600:$1.7100 2400:$1.6000 3200:$1.4500 5600:$1.3900
IRF2804STRLPBF DISTI # IRF2804SPBF-GURT	Infineon Technologies AG	N-Ch 40V 75A 300W 0,002R DPak RoHS: Compliant	850	10:€1.3400 50:€1.1400 200:€1.0400 500:€1.0000
IRF2804STRLPBF DISTI # 2725883	Infineon Technologies AG	MOSFET, N-CH, 40V, 75A, TO-263 RoHS: Compliant	345	1:£2.2300 10:£1.8900 100:£1.6500 250:£1.5700 500:£1.4900
IRF2804STRLPBF DISTI # 2725883	Infineon Technologies AG	MOSFET, N-CH, 40V, 75A, TO-263 RoHS: Compliant	286	1:$4.6800 10:$3.9700 100:$3.4600 250:$3.2800 500:$2.9300 800:$2.4900
IRF2804STRLPBF. DISTI # 2119867	Infineon Technologies AG	MOSFET Transistor RoHS: Compliant	0	1:$4.6800 10:$3.9700 100:$3.4600 250:$3.2800 500:$3.2200
IRF2804STRLPBF DISTI # C1S322000479564	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 280A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	801	250:$1.7469 100:$1.8815 25:$2.1006 10:$2.1085 1:$2.3857
IRF2804STRLPBF DISTI # C1S322000479573	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 280A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	8000	1600:$1.3100 800:$1.4200

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	Mfr.#: CGA3E3X7R1H224K080AE OMO.#: OMO-CGA3E3X7R1H224K080AE	Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0603 50V 0.22uF X7R 10% AEC-Q200
	Mfr.#: ECS-80-10-30B-CWN-TR OMO.#: OMO-ECS-80-10-30B-CWN-TR	Crystals 8MHz 10ppm 10pF -40C +85C
	Mfr.#: SR1206FR-7W22RL OMO.#: OMO-SR1206FR-7W22RL-YAGEO	RES SMD 1206 1/2W 1% 22 OHM
	Mfr.#: MCP14A0454-E/SN OMO.#: OMO-MCP14A0454-E-SN-MICROCHIP-TECHNOLOGY	4.5A Matched, High -speed, Low-side MOSFET Drive
	Mfr.#: ATMEGA88PB-ANR OMO.#: OMO-ATMEGA88PB-ANR-MICROCHIP-TECHNOLOGY	Microcontrollers - MCU 8-bit Microcontrollers - MCU 8-bit picoPower, 8KB Flash, 32-pin - 20 MHZ, TQFP, 105C, GREEN, T&R
	Mfr.#: CGA3E3X7R1H224K080AE OMO.#: OMO-CGA3E3X7R1H224K080AE-TDK	Cap Ceramic 0.22uF 50V X7R 10% SMD 0603 FlexiTerm 125C Automotive T/R
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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von IRF2804STRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,95 $~~; ~~2,95 $~~

10: ~~2,50 $~~; ~~25,00 $~~

100: ~~2,17 $~~; ~~217,00 $~~

250: ~~2,06 $~~; ~~515,00 $~~

500: ~~1,85 $~~; ~~925,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF2804STRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes