MR2A08AYS35R

Mfr. #:: MR2A08AYS35R
Hersteller:: Everspin Technologies
Beschreibung:: NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MR2A08AYS35R Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: MR2A08AYS35R Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Everspin-Technologien

Produktkategorie:: NVRAM

RoHS:: Y

Paket / Koffer:: TSOP-44

Oberflächentyp:: Parallel

Speichergröße:: 4 Mbit

Organisation:: 512 k x 8

Datenbusbreite:: 8 bit

Zugriffszeit:: 35 ns

Versorgungsspannung - Max.:: 3.6 V

Versorgungsspannung - Min.:: 3 V

Betriebsversorgungsstrom:: 50 mA

Minimale Betriebstemperatur:: 0 C

Maximale Betriebstemperatur:: + 70 C

Serie:: MR2A08A

Verpackung:: Spule

Marke:: Everspin-Technologien

Montageart:: SMD/SMT

Feuchtigkeitsempfindlich:: ja

Produktart:: NVRAM

Werkspackungsmenge:: 1500

Unterkategorie:: Speicher & Datenspeicherung

Tags: MR2A0, MR2A, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR2A08AYS35R Beschreibung

***i-Key: IC RAM 4M PARALLEL 44TSOP2

MR2A08AYS35R Mehr Informationen

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MR2A08AYS35R DISTI # MR2A08AYS35R-ND	Everspin Technologies	IC RAM 4M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$16.5186
MR2A08AYS35R DISTI # MR2A08AYS35R	Everspin Technologies	NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR2A08AYS35R) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	1500:€18.0900 3000:€17.3900 6000:€16.6900 9000:€15.4900 15000:€14.4900
MR2A08AYS35 DISTI # 936-MR2A08AYS35	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	213	1:$21.4700 5:$20.8400 10:$20.0000 25:$19.7800 50:$19.2900 100:$16.9300 250:$16.3600
MR2A08AYS35R DISTI # 936-MR2A08AYS35R	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	0	1500:$16.5200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MR2A08AMYS35 OMO.#: OMO-MR2A08AMYS35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMA35 OMO.#: OMO-MR2A08AMA35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACMA35R OMO.#: OMO-MR2A08ACMA35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AYS35R OMO.#: OMO-MR2A08AYS35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMYS35R OMO.#: OMO-MR2A08AMYS35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMA35R OMO.#: OMO-MR2A08AMA35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACYS35 OMO.#: OMO-MR2A08ACYS35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMYS35R OMO.#: OMO-MR2A08AMYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACMA35 OMO.#: OMO-MR2A08ACMA35-EVERSPIN-TECHNOLOGIES	IC RAM 4M PARALLEL 48FBGA
	Mfr.#: MR2A08AMA35 OMO.#: OMO-MR2A08AMA35-EVERSPIN-TECHNOLOGIES	IC RAM 4M PARALLEL 48FBGA

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von MR2A08AYS35R dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

MR2A0 10
MR2A 26
MR2 752

Neueste Produkte

Kilovac Lightweight DC Contactors

TE Connectivity's EV200/LEV100/LEV200 contactors offer continuous current ratings up to 500 A at 900 VDC in very compact packages.
SKY66111-11 Bluetooth® Low Energy (BLE) Front

Skyworks’ SKY66111-11 front-end module including the TX/RX and antenna switch, filtering, and amplifier needed to improve range and performance of BLE design.
SolderTacts Contacts

TE Connectivity's SolderTacts are a single step, one piece controlled reflow solder contact which terminates connections quickly and reliably.
INSTALITE ZH-150 Tubing

TE Connectivity's INSTALITE ZH-150 heat-shrinkable tubing combines high-temperature and zero halogen properties in a lightweight material.
Compare MR2A08AYS35R

MR2A08ACMA35 vs MR2A08ACMA35R vs MR2A08ACYS35
Raychem S200 Shield Terminators

TE Connectivity Aerospace, Defense and Marine's S200 shield terminators provide an environmentally protected shield for high temperature cable applications.

More Newest Products

MR2A08AYS35R

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes