MRF7P20040HSR3

Mfr. #:: MRF7P20040HSR3
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF7P20040HSR3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: Y

Polarität des Transistors:: N-Kanal

Technologie:: Si

Id - Kontinuierlicher Drainstrom:: 150 mA

Vds - Drain-Source-Durchbruchspannung:: 65 V

Gewinnen:: 18.2 dB

Ausgangsleistung:: 10 W

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: NI-780S-4

Verpackung:: Spule

Aufbau:: Single

Höhe:: 4.32 mm

Länge:: 20.7 mm

Arbeitsfrequenz:: 1.8 GHz to 2.2 GHz

Serie:: MRF7P20040H

Typ:: HF-Leistungs-MOSFET

Breite:: 9.91 mm

Marke:: NXP / Freescale

Kanalmodus:: Erweiterung

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: 10 V

Vgs th - Gate-Source-Schwellenspannung:: 2.7 V

Teil # Aliase:: 935310091128

Gewichtseinheit:: 0.228180 oz

Tags: MRF7P20040HS, MRF7P, MRF7, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF7P20040HSR3 Beschreibung

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025 MHz, 10 W Avg., 32 V

***et: Power LDMOS Transistor N-Channel 65V 5-Pin NI-780S T/R

***ical: Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R

*** Electronic Components: RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4

***i-Key: FET RF 2CH 65V 2.03GHZ NI780HS-4

***i-Key Marketplace: RF 2-ELEMENT, S BAND, N-CHANNEL

*** Source Electronics: Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523

***ure Electronics: DMN55D0UT Series 50 V 160 mA N-Channel Enhancement Mode Mosfet - SOT-523

***nell: MOSFET, N-CH, 50V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 160mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4; Available until stocks are exhausted

***et: Transistor MOSFET Array Dual P-CH 50V 160mA 6-Pin SOT-563 T/R

***p One Stop: Trans MOSFET P-CH 50V 0.16A Automotive 6-Pin SOT-563 T/R

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 50V VDS, 8±V VGS

***(Formerly Allied Electronics): MOSFET Dual P-Ch 50V 160mA Enhanc.SOT563

***ment14 APAC: MOSFET, DUAL, P-CH, 50V, 0.16A;

***ark: Mosfet Bvdss: 41V~60V Sot563 T&r 3K

***ical: N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-363 T/R

***ure Electronics: DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet + NPN Transistor - SOT-363

***ark: Transistor, Npn/n-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 50V, 0.16A

***escale Semiconductor: Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V

***W: RF Power Transistor,100 to 3600 MHz, 16.2 W, Typ Gain in dB is 17.6 @ 2170 MHz, 28 V, LDMOS, SOT1732

***et: Transistor RF FET N-CH 65V 1805MHz to 2700MHz 2-Pin TO-270 T/R

*** Electronic Components: RF MOSFET Transistors AF 1.8-2.7G 15W TO270-2

***p One Stop Global: Trans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R

***ark: P CH MOSFET, -60V, 190mA, SC-75A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No

***nell: MOSFET, P CH, -60V, -0.19A, SOT-416; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:250mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-416; No. of Pins:3; MSL:-

***(Formerly Allied Electronics): MOSFET,P-Ch,VDSS -60V,RDS(ON) 10 Ohms,ID -185mA,TO-236 (SOT-23),PD 350mW,-55degc

***enic: 60V 185mA 6´Î@10V500mA 350mW 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***th Star Micro: Transistor MOSFET P-CH 60V 0.185A 3-Pin TO-236 T/R

***roFlash: Small Signal Field-Effect Transistor, 0.185A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ment14 APAC: P CH MOSFET, -60V, 185mA, TO-236; Transi; P CH MOSFET, -60V, 185mA, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-185mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF7P20040HSR3 DISTI # MRF7P20040HSR3-ND	NXP Semiconductors	FET RF 2CH 65V 2.03GHZ NI780HS-4 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRF7P20040HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	20665	1000:$47.7900 500:$50.3100 100:$52.3800 25:$54.6200 1:$58.8200
MRF7P20040HSR3 DISTI # 841-MRF7P20040HSR3	NXP Semiconductors	RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4 RoHS: Compliant	0
MRF7P20040HSR3 DISTI # MRF7P20040HSR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MRF7P20040HSR3 OMO.#: OMO-MRF7P20040HSR3	RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4
	Mfr.#: MRF7P20040H OMO.#: OMO-MRF7P20040H-1190	Neu und Original
	Mfr.#: MRF7P20040HS OMO.#: OMO-MRF7P20040HS-1190	Neu und Original
	Mfr.#: MRF7P20040HR5 OMO.#: OMO-MRF7P20040HR5-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.03GHZ NI780H-4
	Mfr.#: MRF7P20040HSR5 OMO.#: OMO-MRF7P20040HSR5-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.03GHZ NI780HS-4
	Mfr.#: MRF7P20040HSR3 OMO.#: OMO-MRF7P20040HSR3-NXP-SEMICONDUCTORS	RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von MRF7P20040HSR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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MRF7P20040HSR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes