STI28N60M2

STI28N60M2
Mfr. #:
STI28N60M2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STI28N60M2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STI28N60M2 Mehr Informationen STI28N60M2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
D2PAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
135 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
36 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
170 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Rohr
Serie:
STI28N60M2
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
7.2 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
100 ns
Typische Einschaltverzögerungszeit:
14.5 ns
Gewichtseinheit:
0.051500 oz
Tags
STI2, STI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
N-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube
***va Crawler
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) I2PAK Tube
***nell
MOSFET, N-CH, 650V, 22A, TO-262
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STI28N60M2
DISTI # V99:2348_18694116
STMicroelectronicsSTI28N60M21000
  • 250:$2.2420
  • 100:$2.3240
  • 10:$2.6990
  • 1:$3.5277
STI28N60M2
DISTI # 497-17621-ND
STMicroelectronicsMOSFET N-CH 600V 22A I2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 2520:$1.7080
  • 510:$2.1265
  • 120:$2.4979
  • 30:$2.8823
  • 10:$3.0490
  • 1:$3.3900
STI28N60M2
DISTI # 32338064
STMicroelectronicsSTI28N60M21000
  • 250:$2.4101
  • 100:$2.4994
  • 10:$2.9036
  • 4:$3.7923
STI28N60M2
DISTI # STI28N60M2
STMicroelectronicsN-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube - Tape and Reel (Alt: STI28N60M2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 5000:$1.4900
  • 10000:$1.4900
  • 3000:$1.5900
  • 2000:$1.6900
  • 1000:$1.7900
STI28N60M2
DISTI # 48AC3302
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.5300
STI28N60M2
DISTI # 511-STI28N60M2
STMicroelectronicsMOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
RoHS: Compliant
789
  • 1:$3.2300
  • 10:$2.7400
  • 100:$2.3800
  • 250:$2.2500
  • 500:$2.0200
  • 1000:$1.7000
STI28N60M2
DISTI # 1646960
STMicroelectronicsMOSFET N-CH 600V 22A MDMESH M2 I2PAK, TU98
  • 500:£1.4600
  • 100:£1.7250
  • 50:£2.0300
STI28N60M2
DISTI # 2767838
STMicroelectronicsMOSFET, N-CH, 650V, 22A, TO-262
RoHS: Compliant
100
  • 5010:$2.6300
  • 2520:$2.7400
  • 1020:$2.8800
  • 510:$3.4100
  • 120:$4.2100
  • 30:$4.6200
  • 1:$5.7400
STI28N60M2
DISTI # 2767838
STMicroelectronicsMOSFET, N-CH, 650V, 22A, TO-262100
  • 500:£1.5700
  • 250:£1.7400
  • 100:£1.8600
  • 10:£2.1300
  • 1:£2.8300
Bild Teil # Beschreibung
1EDS5663HXUMA1

Mfr.#: 1EDS5663HXUMA1

OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

IC DRIVER IC GAN DSO-16
UCC21520AQDWQ1

Mfr.#: UCC21520AQDWQ1

OMO.#: OMO-UCC21520AQDWQ1-TEXAS-INSTRUMENTS

Isolated Dual-Channel Gate Driver for Automotive
Verfügbarkeit
Aktie:
784
Auf Bestellung:
2767
Menge eingeben:
Der aktuelle Preis von STI28N60M2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,23 $
3,23 $
10
2,74 $
27,40 $
100
2,38 $
238,00 $
250
2,25 $
562,50 $
500
2,02 $
1 010,00 $
1000
1,70 $
1 700,00 $
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