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SQJ868EP-T1_GE3

SQJ868EP-T1_GE3
Mfr. #:
SQJ868EP-T1_GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET Dual N-Ch 40V AEC-Q101 Qualified
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQJ868EP-T1_GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ868EP-T1_GE3 DatasheetSQJ868EP-T1_GE3 Datasheet (P4-P6)SQJ868EP-T1_GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SQJ868EP-T1_GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
58 A
Rds On - Drain-Source-Widerstand:
6.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
55 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
48 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Serie:
SQJ868EP
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
85 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SQJ86, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Automotive N-Channel Single 40V VDS ±20V VGS 58A ID 175°C 8-Pin PowerPAK SOIC T/R
***ment14 APAC
MOSFET, N-CH, 40V, 58A, 175DEG C, 48W; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:40V; On Resistance
***nell
MOSFET, N-CH, 40V, 58A, 175DEG C, 48W; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 48W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Teil # Mfg. Beschreibung Aktie Preis
SQJ868EP-T1_GE3
DISTI # V72:2272_21388835		Vishay IntertechnologiesSQJ868EP-T1_GE32990
  • 75000:$0.3168
  • 30000:$0.3226
  • 15000:$0.3325
  • 6000:$0.3454
  • 3000:$0.3559
  • 1000:$0.3678
  • 500:$0.4635
  • 250:$0.5605
  • 100:$0.5715
  • 50:$0.6010
  • 25:$0.6677
  • 10:$0.8162
  • 1:$0.9886
SQJ868EP-T1_GE3
DISTI # V99:2348_21388835		Vishay IntertechnologiesSQJ868EP-T1_GE30
  • 3000000:$0.3430
  • 1500000:$0.3431
  • 300000:$0.3482
  • 30000:$0.3552
  • 3000:$0.3563
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 58A POWERPAKSOL
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2990In Stock
  • 1000:$0.4049
  • 500:$0.5061
  • 100:$0.6403
  • 10:$0.8350
  • 1:$0.9500
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 58A POWERPAKSOL
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2990In Stock
  • 1000:$0.4049
  • 500:$0.5061
  • 100:$0.6403
  • 10:$0.8350
  • 1:$0.9500
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 58A POWERPAKSOL
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.3112
  • 15000:$0.3194
  • 6000:$0.3317
  • 3000:$0.3563
SQJ868EP-T1_GE3
DISTI # 30287465		Vishay IntertechnologiesSQJ868EP-T1_GE32990
  • 20:$0.9886
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Automotive N-Channel Single 40V VDS ±20V VGS 58A ID 175°C 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SQJ868EP-T1_GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2999
  • 18000:$0.3079
  • 12000:$0.3169
  • 6000:$0.3299
  • 3000:$0.3399
SQJ868EP-T1_GE3
DISTI # 81AC2820		Vishay IntertechnologiesMOSFET, N-CH, 40V, 58A, 175DEG C, 48W,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5
  • 1000:$0.3940
  • 500:$0.5000
  • 250:$0.5400
  • 100:$0.5810
  • 50:$0.6390
  • 25:$0.6980
  • 10:$0.7560
  • 1:$0.9190
SQJ868EP-T1_GE3
DISTI # 59AC7657		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
  • 50000:$0.3020
  • 30000:$0.3160
  • 20000:$0.3400
  • 10000:$0.3630
  • 5000:$0.3940
  • 1:$0.4030
SQJ868EP-T1_GE3
DISTI # 78-SQJ868EP-T1_GE3		Vishay IntertechnologiesMOSFET Dual N-Ch 40V AEC-Q101 Qualified
RoHS: Compliant		2450
  • 1:$0.9100
  • 10:$0.7490
  • 100:$0.5750
  • 500:$0.4950
  • 1000:$0.3900
SQJ868EP-T1_GE3
DISTI # 2932971		Vishay IntertechnologiesMOSFET, N-CH, 40V, 58A, 175DEG C, 48W25
  • 500:£0.3580
  • 250:£0.3880
  • 100:£0.4170
  • 10:£0.5930
  • 1:£0.7540
SQJ868EP-T1_GE3
DISTI # 2932971		Vishay IntertechnologiesMOSFET, N-CH, 40V, 58A, 175DEG C, 48W
RoHS: Compliant		5
  • 1000:$0.5220
  • 500:$0.5510
  • 250:$0.6480
  • 100:$0.7890
  • 10:$1.0100
  • 1:$1.2200
Bild Teil # Beschreibung
SQJ868EP-T1_GE3

Mfr.#: SQJ868EP-T1_GE3

OMO.#: OMO-SQJ868EP-T1-GE3

 MOSFET Dual N-Ch 40V AEC-Q101 Qualified
SQJ868EP

Mfr.#: SQJ868EP

OMO.#: OMO-SQJ868EP-1190

 Neu und Original
SQJ868EP-T1_GE3

Mfr.#: SQJ868EP-T1_GE3

OMO.#: OMO-SQJ868EP-T1-GE3-VISHAY

 MOSFET N-CH 40V 58A POWERPAKSOL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SQJ868EP-T1_GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,91 $
0,91 $
10
0,75 $
7,49 $
100
0,58 $
57,50 $
500
0,50 $
247,50 $
1000
0,39 $
390,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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