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IPA60R299CP

IPA60R299CP
Mfr. #:
IPA60R299CP
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA60R299CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPA60R299CP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
270 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
33 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
16.15 mm
Länge:
10.65 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
4.85 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPA60R299CPXKSA1 IPA6R299CPXK SP000096438
Gewichtseinheit:
0.211644 oz
Tags
IPA60R299C, IPA60R29, IPA60R2, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220FP Infineon IPA60R299CPXKSA1
***ure Electronics
Single N-Channel 600 V 299 mOhm 22 nC CoolMOS™ Power Mosfet - TO-220-3-FP
***p One Stop Global
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
***et
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 650V 11A 3-Pin TO-220FP Tube
***i-Key
MOSFET N-CH 600V 11A TO220-3
***ark
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-220; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:11A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.299ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:33W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:11A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +150°C
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPA60R299CPXKSA1
DISTI # V99:2348_06378234		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		490
  • 500:$1.5340
  • 100:$1.7300
  • 10:$2.0910
  • 1:$2.4020
IPA60R299CPXKSA1
DISTI # IPA60R299CPXKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 11A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$1.8467
IPA60R299CPXKSA1
DISTI # 26197400		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		490
  • 100:$1.7300
  • 10:$2.0910
  • 5:$2.4020
IPA60R299CP
DISTI # 30600910		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant		250
  • 50:$1.0480
IPA60R299CP
DISTI # SP000096438		Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin TO-220FP Tube (Alt: SP000096438)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.6900
  • 10:€1.2900
  • 25:€1.1900
  • 50:€1.1900
  • 100:€1.1900
  • 500:€1.1900
  • 1000:€1.0900
IPA60R299CPXK
DISTI # IPA60R299CPXKSA1		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA60R299CPXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.2900
  • 1000:$1.2900
  • 2000:$1.1900
  • 3000:$1.1900
  • 5000:$1.1900
IPA60R299CPInfineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		19000
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3200
  • 1:$1.4300
IPA60R299CPXKInfineon Technologies AG 
RoHS: Not Compliant		120
  • 1000:$1.2600
  • 500:$1.3300
  • 100:$1.3800
  • 25:$1.4400
  • 1:$1.5600
IPA60R299CPXKSA1Infineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		570499
  • 1000:$1.2900
  • 500:$1.3600
  • 100:$1.4100
  • 25:$1.4700
  • 1:$1.5900
IPA60R299CPXKSA1International RectifierPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		15500
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3200
  • 1:$1.4300
IPA60R299CP
DISTI # 726-IPA60R299CP		Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
RoHS: Compliant		259
  • 1:$2.5900
  • 10:$2.2000
  • 100:$1.7600
IPA60R299CPXKSA1
DISTI # 726-IPA60R299CPXKSA1		Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
RoHS: Compliant		490
  • 1:$2.8300
  • 10:$2.4000
  • 100:$1.9200
IPA60R299CPXK
DISTI # 726-IPA60R299CPXK		Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
RoHS: Compliant		500
  • 1:$2.8300
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
IPA60R299CPXKSA1
DISTI # 8977232P		Infineon Technologies AGMOSFET N-CHANNEL 600V 11A COOLMOS TO220, TU400
  • 20:£1.6100
  • 80:£1.4500
  • 200:£1.2930
  • 400:£1.2680
IPA60R299CPInfineon Technologies AG 25
    IPA60R299CPXKInfineon Technologies AG 800
      IPA60R299CP
      DISTI # C1S322000081022      		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
      RoHS: Compliant      		250
      • 50:$0.8220
      IPA60R299CPXKSA1
      DISTI # C1S322000464915      		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
      RoHS: Compliant      		490
      • 100:$1.7300
      • 10:$2.0910
      • 1:$2.4020
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      Verfügbarkeit
      Aktie:
      245
      Auf Bestellung:
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      Menge eingeben:
      Der aktuelle Preis von IPA60R299CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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      ext. Preis
      1
      2,82 $
      2,82 $
      10
      2,39 $
      23,90 $
      100
      1,91 $
      191,00 $
      500
      1,67 $
      835,00 $
      1000
      1,39 $
      1 390,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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