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IRF60R217

IRF60R217
Mfr. #:
IRF60R217
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF60R217 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF60R217 DatasheetIRF60R217 Datasheet (P4-P6)IRF60R217 Datasheet (P7-P9)IRF60R217 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
IRF60R217 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
58 A
Rds On - Drain-Source-Widerstand:
8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
40 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Breite:
6.22 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
120 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
29 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
21 ns
Typische Einschaltverzögerungszeit:
7.6 ns
Teil # Aliase:
SP001559662
Gewichtseinheit:
0.081130 oz
Tags
IRF60, IRF6, IRF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2000, N-Channel MOSFET, 58 A, 60 V, 3-Pin DPAK Infineon IRF60R217
***ure Electronics
Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK
***ical
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R
***et
Trans MOSFET N 60V 58A 3-Pin DPAK T/R
***i-Key
MOSFET N-CH 60V 58A
***ark
Mosfet, N-Ch, 60V, 58A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 60V, 58A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 60V, 58A, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:58A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.008ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.7V; Straty mocy Pd:83W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRF60R217
DISTI # V72:2272_14701517		Infineon Technologies AGTrans MOSFET N-CH Si 60V 58A T/R
RoHS: Compliant		1040
  • 1000:$0.5780
  • 500:$0.7042
  • 250:$0.7654
  • 100:$0.7915
  • 25:$0.9714
  • 10:$0.9832
  • 1:$1.1142
IRF60R217
DISTI # IRF60R217CT-ND		Infineon Technologies AGMOSFET N-CH 60V 58A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1214In Stock
  • 1000:$0.7585
  • 500:$0.9608
  • 100:$1.2389
  • 10:$1.5680
  • 1:$1.7700
IRF60R217
DISTI # IRF60R217DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 58A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1214In Stock
  • 1000:$0.7585
  • 500:$0.9608
  • 100:$1.2389
  • 10:$1.5680
  • 1:$1.7700
IRF60R217
DISTI # IRF60R217TR-ND		Infineon Technologies AGMOSFET N-CH 60V 58A
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.6873
IRF60R217
DISTI # 30181895		Infineon Technologies AGTrans MOSFET N-CH Si 60V 58A T/R
RoHS: Compliant		1040
  • 1000:$0.5780
  • 500:$0.7042
  • 250:$0.7654
  • 100:$0.7915
  • 25:$0.9714
  • 15:$0.9832
IRF60R217
DISTI # IRF60R217		Infineon Technologies AGTrans MOSFET N 60V 58A 3-Pin DPAK T/R - Tape and Reel (Alt: IRF60R217)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.5139
  • 4000:$0.4949
  • 8000:$0.4769
  • 12000:$0.4609
  • 20000:$0.4529
IRF60R217
DISTI # 34AC1773		Infineon Technologies AGMOSFET, N-CH, 60V, 58A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power DissipationRoHS Compliant: Yes3806
  • 1:$1.4700
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0600
  • 100:$0.9600
  • 250:$0.9040
  • 500:$0.8480
  • 1000:$0.6700
IRF60R217
DISTI # 942-IRF60R217		Infineon Technologies AGMOSFET 60V, 58A, 9.9 mOhm 40 nC Qg
RoHS: Compliant		5380
  • 1:$1.4700
  • 10:$1.2500
  • 100:$0.9600
  • 500:$0.8480
  • 1000:$0.6700
IRF60R217
DISTI # 1236145P		Infineon Technologies AGSTRONGIR FET 60V 58A9.9 MOHMDPAK, RL1920
  • 50:£0.3720
IRF60R217
DISTI # 2781111		Infineon Technologies AGMOSFET, N-CH, 60V, 58A, TO-252
RoHS: Compliant		3806
  • 5:$2.2100
  • 25:$1.9300
  • 100:$1.5700
  • 250:$1.3300
  • 500:$1.1500
  • 1000:$1.0900
  • 5000:$1.0300
IRF60R217
DISTI # 2781111		Infineon Technologies AGMOSFET, N-CH, 60V, 58A, TO-252
RoHS: Compliant		3811
  • 5:£0.7330
  • 25:£0.6070
  • 100:£0.5440
  • 250:£0.5020
  • 500:£0.4690
IRF60R217
DISTI # C1S322000625738		Infineon Technologies AGMOSFETs1040
  • 250:$0.8080
  • 100:$0.8106
  • 25:$0.9864
  • 10:$0.9909
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SFSD2048N3BM1TO-I-GE-2CP-STD

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Mfr.#: FDD86569-F085

OMO.#: OMO-FDD86569-F085

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Mfr.#: PMEG4010EGWX

OMO.#: OMO-PMEG4010EGWX

 Schottky Diodes & Rectifiers 40V, 1 A low VF MEGA Schottky barrier rectifier, 3k Reel
L1I0-0940060000000

Mfr.#: L1I0-0940060000000

OMO.#: OMO-L1I0-0940060000000

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OMO.#: OMO-M20-7910642R

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von IRF60R217 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,46 $
1,46 $
10
1,25 $
12,50 $
100
0,96 $
96,00 $
500
0,85 $
424,00 $
1000
0,67 $
670,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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