IRL3716SPBF

IRL3716SPBF
Mfr. #:
IRL3716SPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL3716SPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL3716SPBF DatasheetIRL3716SPBF Datasheet (P4-P6)IRL3716SPBF Datasheet (P7-P9)IRL3716SPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
4.8 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
53 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
210 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
6.22 mm
Marke:
Infineon / IR
Abfallzeit:
36 ns
Produktart:
MOSFET
Anstiegszeit:
140 ns
Werkspackungsmenge:
3200
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
SP001568304
Gewichtseinheit:
0.139332 oz
Tags
IRL3716S, IRL3716, IRL371, IRL37, IRL3, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***ical
Trans MOSFET N-CH 20V 180A 3-Pin(2+Tab) D2PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:180A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:180A; Resistance, Rds On:0.004ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:640mJ; Current, Idm Pulse:720A; Power Dissipation:210W; Power, Pd:210W; SMD Marking:3716S; Time, trr Typ:180ns; Typ Capacitance Ciss:5090pF; Voltage, Vds Max:20V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1V
Teil # Mfg. Beschreibung Aktie Preis
IRL3716SPBF
DISTI # IRL3716SPBF-ND
Infineon Technologies AGMOSFET N-CH 20V 180A D2PAK
RoHS: Compliant
Min Qty: 3200
Container: Tube
Limited Supply - Call
    Bild Teil # Beschreibung
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    Neu und Original
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    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von IRL3716SPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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