KSP06BU

Mfr. #:: KSP06BU
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: KSP06BU Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: Durchgangsloch

Paket / Koffer:: TO-92-3

Polarität des Transistors:: NPN

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 80 V

Kollektor- Basisspannung VCBO:: 80 V

Emitter- Basisspannung VEBO:: 4 V

Kollektor-Emitter-Sättigungsspannung:: 0.25 V

Maximaler DC-Kollektorstrom:: 0.5 A

Bandbreitenprodukt fT gewinnen:: 100 MHz

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: KSP06

Höhe:: 4.7 mm

Länge:: 4.7 mm

Verpackung:: Schüttgut

Breite:: 3.93 mm

Marke:: ON Semiconductor / Fairchild

Kontinuierlicher Kollektorstrom:: 0.5 A

DC-Kollektor/Basisverstärkung hfe Min:: 50

Pd - Verlustleistung:: 625 mW

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 10000

Unterkategorie:: Transistoren

Teil # Aliase:: KSP06BU_NL

Gewichtseinheit:: 0.006314 oz

Tags: KSP06B, KSP06, KSP0, KSP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

KSP06BU Beschreibung

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

*** Electronic Components: Bipolar Transistors - BJT NPN Si Transistor Epitaxial

***et Europe: Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

*** Electronic Components: Bipolar Transistors - BJT NPN Transistor Medium Power

***emi: 500 mA, 80 V NPN Small Signal Bipolar Junction Transistor

***Yang: Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk

***ure Electronics: MPSAXX Series 80 V CE Breakdown 0.5 A NPN General Purpose Amplifier - TO-92

***fin: Transistor NPN MPSA06 FAIRCHILD milliampere=500 TO92

***ment14 APAC: Transistor, NPN, 80V, 0.5A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation

***rchild Semiconductor: NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.

***ark: Transistor, Npn, 80V, 0.5A, To-226Aa; Transistor Polarity:npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:625Mw; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes

***nell: TRANSISTOR, NPN, 80V, 0.5A, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole

***r Electronics: Small Signal Bipolar Transistor, 0.25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

***et: TRANS GP BJT NPN 80V 0.2A 3PIN TO-92

***nell: TRANSISTOR, NPN 0.2A 80V TO-92; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Max Current Ic Continuous a:10mA; Max Voltage Vce Sat:200mV; Power Dissipation:625mW; Min Hfe:60; Case Style:TO-92; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C

***Yang: Bipolar (BJT) Transistor NPN 100V 200mA 625mW Through Hole TO-92-3 - Bulk

***r Electronics: Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

***eco: PNP Silicon High Current Transistor 100V 200mA TO-92

***ical: Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk

***rchild Semiconductor: NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.

***ark: Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Power Dissipation, Pd:625mW; DC Collector Current:200mA; DC Current Gain Max (hfe):80; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: BIPOLAR TRANSISTOR, NPN, 60V, TO-92; Tra

***Yang: TRANS GP BJT NPN 60V 0.5A 3PIN TO-92 - Bulk

***eco: NPN General Purpose Amplifier 60V 500mA TO-92

***ark: Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Transition Frequency Typ, ft:250MHz; Power Dissipation, Pd:625mW; DC Collector Current:500mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

***ure Electronics: BC546 Series 65 V 100 mA 500 mW NPN Epitaxial Silicon Transistor - TO-92-3

***ical: Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Fan-Fold

*** Electronic Components: Bipolar Transistors - BJT NPN 65V 100mA HFE/450

***enic: 65V 500mW 100mA 200@2mA5V 300MHz 250mV@100mA5mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS

***i-Key: TRANSISTOR NPN 65V 100MA TO-92

***ment14 APAC: Transistor, NPN, 65V, 0.1A, 0.5W, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:300MHz; Power

***nell: TRANS, NPN, 65V, 0.1A, 0.5W, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 500mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans GP BJT NPN 60V 1A 3-Pin TO-92 Bulk

***et: Bipolar Transistors - BJT NPN Epitaxial Sil

***el Electronic: IC SUPERVISOR 1 CHANNEL 5SSOP

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
KSP06BU DISTI # V36:1790_06302067	ON Semiconductor	NPN EPITAXIAL SILICON TRANSIST	0
KSP06BU DISTI # KSP06BU-ND	ON Semiconductor	TRANS NPN 80V 0.5A TO-92 RoHS: Compliant Min Qty: 10000 Container: Bulk	Temporarily Out of Stock	10000:$0.0396
KSP06BU DISTI # KSP06BU	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk (Alt: KSP06BU) RoHS: Compliant Min Qty: 10000 Container: Bulk	Americas - 19900	100000:$0.0238 50000:$0.0244 30000:$0.0247 20000:$0.0251 10000:$0.0252
KSP06BU DISTI # KSP06BU	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk (Alt: KSP06BU) RoHS: Compliant Min Qty: 1 Container: Bulk	Europe - 0	1000:€0.0259 500:€0.0267 100:€0.0276 50:€0.0300 25:€0.0366 10:€0.0453 1:€0.0600
KSP06BU DISTI # KSP06BU	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk (Alt: KSP06BU) RoHS: Compliant Min Qty: 8334 Container: Bulk	Americas - 0	83340:$0.0370 41670:$0.0380 25002:$0.0385 16668:$0.0390 8334:$0.0392
KSP06BU. DISTI # 96AC0368	ON Semiconductor	NPN/80V/0.5A/50 ROHS COMPLIANT: YES	0	100000:$0.0340 50000:$0.0350 1:$0.0360 10002:$0.0360 20002:$0.0360
KSP06BU DISTI # 512-KSP06BU	ON Semiconductor	Bipolar Transistors - BJT NPN Si Transistor Epitaxial RoHS: Compliant	17440	1:$0.3000 10:$0.2000 100:$0.0840 1000:$0.0570 2500:$0.0450 10000:$0.0380 25000:$0.0360 50000:$0.0340 100000:$0.0290
KSP06TA DISTI # 512-KSP06TA	ON Semiconductor	Bipolar Transistors - BJT NPN Si Transistor Epitaxial RoHS: Compliant	2784	1:$0.3400 10:$0.2260 100:$0.0950 1000:$0.0650 2000:$0.0510 10000:$0.0430 24000:$0.0410 50000:$0.0380 100000:$0.0330
KSP06BU	Fairchild Semiconductor Corporation	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 RoHS: Compliant	40379	100:$0.0400 500:$0.0400 1000:$0.0400 1:$0.0500 25:$0.0500

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	Mfr.#: R82EC1100Z350J OMO.#: OMO-R82EC1100Z350J-KEMET	Film Capacitors 100volts 1000pF 5%
	Mfr.#: DSPIC33CH128MP206-I/PT OMO.#: OMO-DSPIC33CH128MP206-I-PT-MICROCHIP-TECHNOLOGY	16 Bit DSC, Dual Core, 128K Flash, 16K+ 4K RAM, 100MHz, 64Pin
	Mfr.#: TM1000Q OMO.#: OMO-TM1000Q-E-SWITCH	Tilt Switches 20mA 20VDC Silver Plating
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Verfügbarkeit

Aktie:: 17
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von KSP06BU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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KSP06BU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes