2N5551TAR

2N5551TAR
Mfr. #:
2N5551TAR
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT NPN Transistor General Purpose
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5551TAR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3 Kinked Lead
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
160 V
Kollektor- Basisspannung VCBO:
180 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
0.2 V
Maximaler DC-Kollektorstrom:
0.6 A
Bandbreitenprodukt fT gewinnen:
300 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N5551
DC-Stromverstärkung hFE Max:
250
Höhe:
4.7 mm
Länge:
4.7 mm
Verpackung:
Munitionspackung
Breite:
3.93 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
0.6 A
DC-Kollektor/Basisverstärkung hfe Min:
80
Pd - Verlustleistung:
625 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.006286 oz
Tags
2N5551TA, 2N5551T, 2N5551, 2N555, 2N55, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Small Signal NPN Bipolar Transistor
***i-Key
TRANS NPN 160V 0.6A TO-92
***rchild Semiconductor
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
Teil # Mfg. Beschreibung Aktie Preis
2N5551TAR
DISTI # 2N5551TAR-ND
ON SemiconductorTRANS NPN 160V 0.6A TO-92
RoHS: Compliant
Min Qty: 16000
Container: Tape & Box (TB)
Limited Supply - Call
    2N5551TAR_Q
    DISTI # 512-2N5551TAR_Q
    ON SemiconductorBipolar Transistors - BJT NPN Transistor General Purpose
    RoHS: Not compliant
    0
      2N5551TAR
      DISTI # 512-2N5551TAR
      ON SemiconductorBipolar Transistors - BJT NPN Transistor General Purpose
      RoHS: Compliant
      0
        Bild Teil # Beschreibung
        2N5550TFR

        Mfr.#: 2N5550TFR

        OMO.#: OMO-2N5550TFR

        Bipolar Transistors - BJT NPN Si Transistor Epitaxial
        2N5551C  N6C ST

        Mfr.#: 2N5551C N6C ST

        OMO.#: OMO-2N5551C-N6C-ST-1190

        Neu und Original
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        Mfr.#: 2N5551E

        OMO.#: OMO-2N5551E-1190

        Neu und Original
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        Mfr.#: 2N5551L

        OMO.#: OMO-2N5551L-1190

        Neu und Original
        2N5551L-B-AB3-R

        Mfr.#: 2N5551L-B-AB3-R

        OMO.#: OMO-2N5551L-B-AB3-R-1190

        Neu und Original
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        Mfr.#: 2N5551RLRMG

        OMO.#: OMO-2N5551RLRMG-ON-SEMICONDUCTOR

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        Mfr.#: 2N5562

        OMO.#: OMO-2N5562-1190

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        OMO.#: OMO-2N5589-1190

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        Mfr.#: 2N5551S-RTKP

        OMO.#: OMO-2N5551S-RTKP-1190

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        OMO.#: OMO-2N5545JTXV01-VISHAY

        JFET N-CH 50V TO-71
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von 2N5551TAR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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