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RGT80TS65DGC11

RGT80TS65DGC11
Mfr. #:
RGT80TS65DGC11
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors 650V 40A Field Stop Trench IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGT80TS65DGC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
RGT80TS65DGC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Rohm Semiconductor
Produktkategorie
IGBTs - Single
Serie
RGT80TS65D
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247N
Leistung max
234W
Reverse-Recovery-Time-trr
58ns
Strom-Kollektor-Ic-Max
70A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
120A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 40A
Schaltenergie
-
Gate-Gebühr
79nC
Td-ein-aus-25°C
34ns/119ns
Testbedingung
400V, 40A, 10 Ohm, 15V
Pd-Verlustleistung
234 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.65 V
Kontinuierlicher Kollektorstrom-bei-25-C
70 A
Gate-Emitter-Leckstrom
+/- 200 nA
Maximale Gate-Emitter-Spannung
+/- 30 V
Kontinuierlicher Kollektor-Strom-Ic-Max
70 A
Tags
RGT80TS65DG, RGT80, RGT8, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Teil # Mfg. Beschreibung Aktie Preis
RGT80TS65DGC11
DISTI # RGT80TS65DGC11-ND		ROHM SemiconductorIGBT 650V 70A 234W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		236In Stock
  • 2520:$1.9460
  • 510:$2.3074
  • 120:$2.7105
  • 30:$3.1277
  • 10:$3.3080
  • 1:$3.6800
RGT80TS65DGC11
DISTI # RGT80TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGT80TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$1.6900
  • 2700:$1.7900
  • 1800:$1.8900
  • 900:$1.9900
  • 450:$2.0900
RGT80TS65DGC11
DISTI # 755-RGT80TS65DGC11		ROHM SemiconductorIGBT Transistors 650V 40A IGBT Stop Trench
RoHS: Compliant		338
  • 1:$3.6800
  • 10:$3.1300
  • 100:$2.7200
  • 250:$2.5800
  • 500:$2.3100
  • 1000:$1.9500
  • 2500:$1.8500
RGT80TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 18:$4.1000
  • 6:$4.5100
  • 1:$6.1500
RGT80TS65DGC11
DISTI # 2519784		ROHM SemiconductorIGBT, SINGLE, 650V, 70A, TO-247N-3
RoHS: Compliant		0
  • 270:$3.9000
  • 120:$4.1200
  • 30:$4.7500
  • 10:$5.0200
  • 1:$5.5700
RGT80TS65DGC11
DISTI # 2519784		ROHM SemiconductorIGBT, SINGLE, 650V, 70A, TO-247N-30
  • 500:£1.4200
  • 250:£1.5900
  • 100:£1.6800
  • 10:£1.9400
  • 1:£2.5500
RGT80TS65DGC11
DISTI # IGBT2243		ROHM SemiconductorIGBT650V40A1,65VTO-247
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$3.1100
  • 900:$2.9200
  • 1350:$2.8300
  • 1800:$2.6100
RGT80TS65DGC11ROHM Semiconductor 30
  • 1:¥46.2566
  • 100:¥26.2275
  • 450:¥16.6282
RGT80TS65DGC11ROHM SemiconductorIGBT Transistors 650V 40A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGT80TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$4.0300
    • 10:$3.0200
    • 50:$2.6600
    • 100:$2.2800
    • 500:$2.1200
    • 1000:$2.0500
    Bild Teil # Beschreibung
    RGT80TS65DGC11

    Mfr.#: RGT80TS65DGC11

    OMO.#: OMO-RGT80TS65DGC11

    		 IGBT Transistors 650V 40A IGBT Stop Trench
    RGT80TS65DGC11

    Mfr.#: RGT80TS65DGC11

    OMO.#: OMO-RGT80TS65DGC11-ROHM-SEMI

    		 IGBT Transistors 650V 40A Field Stop Trench IGBT
    RGT80TS65D

    Mfr.#: RGT80TS65D

    OMO.#: OMO-RGT80TS65D-1190

    		 Neu und Original
    RGT80TS65DG

    Mfr.#: RGT80TS65DG

    OMO.#: OMO-RGT80TS65DG-1190

    		 Neu und Original
    RGT80TS65DGC11/TO247NNP

    Mfr.#: RGT80TS65DGC11/TO247NNP

    OMO.#: OMO-RGT80TS65DGC11-TO247NNP-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von RGT80TS65DGC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,54 $
    2,54 $
    10
    2,41 $
    24,08 $
    100
    2,28 $
    228,15 $
    500
    2,15 $
    1 077,40 $
    1000
    2,03 $
    2 028,00 $
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