IXFA110N15T2

IXFA110N15T2
Mfr. #:
IXFA110N15T2
Hersteller:
Littelfuse
Beschreibung:
MOSFET 110Amps 150V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFA110N15T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFA110N15T2 DatasheetIXFA110N15T2 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFA110N15T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
110 A
Rds On - Drain-Source-Widerstand:
11 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
150 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
480 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFA110N15
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
16 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns
Typische Einschaltverzögerungszeit:
33 ns
Gewichtseinheit:
0.081130 oz
Tags
IXFA1, IXFA, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 150V 110A TO263
*** Electronics
DISCMSFT NCHTRENCHGATE-GEN2 TO-2
***S
new, original packaged
***el Nordic
Contact for details
***ineon SCT
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 150V 99A Automotive 3-Pin(2+Tab) D2PAK Tube
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***Yang
Trans MOSFET N-CH 150V 99A 3-Pin D2PAK T/R - Tape and Reel
*** Electronic Components
MOSFET MOSFET_(120V,300V)_47
***el Electronic
CAP CER 7.8PF 50V NP0 0402
***S
new, original packaged
***emi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
***Yang
Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***el Electronic
150V, 79A, 14mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL
***r Electronics
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 150V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel Power Trench® MOSFET 150V, 110A, 5.5mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***p One Stop
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 150V, 21A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.044Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
***ure Electronics
N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***Yang
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***sible Micro
XTR,PWR,MFT,FDB2552,D2PK 150V,37A,N-CHNL MOSFET RDS(on)=36 mOHM,TO-263AB
***r Electronics
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFA110N15T2
DISTI # V36:1790_15876790
IXYS CorporationTrans MOSFET N-CH 150V 110A 3-Pin(2+Tab) TO-263AA
RoHS: Compliant
0
    IXFA110N15T2-TRL
    DISTI # IXFA110N15T2-TRL-ND
    IXYS CorporationMOSFET N-CH 150V 110A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 800:$2.4750
    IXFA110N15T2
    DISTI # 747-IXFA110N15T2
    IXYS CorporationMOSFET 110Amps 150V
    RoHS: Compliant
    0
    • 1:$5.3100
    • 10:$4.7400
    • 25:$4.1300
    • 50:$4.0400
    • 100:$3.8900
    • 250:$3.3200
    • 500:$3.1500
    • 1000:$2.6600
    • 2500:$2.2800
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    Verfügbarkeit
    Aktie:
    96
    Auf Bestellung:
    2079
    Menge eingeben:
    Der aktuelle Preis von IXFA110N15T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,31 $
    5,31 $
    10
    4,74 $
    47,40 $
    25
    4,13 $
    103,25 $
    50
    4,04 $
    202,00 $
    100
    3,89 $
    389,00 $
    250
    3,32 $
    830,00 $
    500
    3,15 $
    1 575,00 $
    1000
    2,66 $
    2 660,00 $
    2500
    2,28 $
    5 700,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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