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MMBF170Q-13-F

MMBF170Q-13-F
Mfr. #:
MMBF170Q-13-F
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MMBF170Q-13-F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MMBF170Q-13-F DatasheetMMBF170Q-13-F Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
MMBF170Q-13-F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
70 V
Id - Kontinuierlicher Drainstrom:
500 mA
Rds On - Drain-Source-Widerstand:
5.3 Ohms
Vgs th - Gate-Source-Schwellenspannung:
800 mV
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
300 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
1 mm
Länge:
2.9 mm
Serie:
MMBF170
Transistortyp:
1 N-Channel
Breite:
1.3 mm
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
80 mS
Produktart:
MOSFET
Werkspackungsmenge:
10000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.000282 oz
Tags
MMBF170Q, MMBF17, MMBF1, MMBF, MMB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET BVDSS: 41V~60V SOT23 T&R 10K
***i-Key
MOSFET N-CH 60V 0.5A
MMBFx N Channel Enhancement Mode MOSFET
Diodes Inc. MMBFx N-channel Enhance mode MOSFET are designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. MMBFx MOSFETs provide low gate threshold voltage, input capacitance, and input/output leakage. These MOSFETs are ideal for high-efficiency power management applications. Applications include power management functions and analog switch.
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Bild Teil # Beschreibung
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OMO.#: OMO-MMBF170Q-13-F

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von MMBF170Q-13-F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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