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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMI20N50E DISTI # FE0000000000987 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI20N50ESSC DISTI # FE0000000004529 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI20N50ES DISTI # FE0000000000988 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMI20N50E OMO.#: OMO-FMI20N50E-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI20N50ES OMO.#: OMO-FMI20N50ES-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI27851 OMO.#: OMO-FMI27851-1190 |
Neu und Original |