STN1NK80Z

Mfr. #:: STN1NK80Z
Hersteller:: STMicroelectronics
Beschreibung:: MOSFET POWER MOSFET Zener SuperMESH
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STN1NK80Z Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STN1NK80Z Mehr Informationen STN1NK80Z Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-223-4

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 800 V

Id - Kontinuierlicher Drainstrom:: 250 mA

Rds On - Drain-Source-Widerstand:: 16 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 3 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 7.7 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2.5 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 1.8 mm

Länge:: 6.5 mm

Serie:: STN1NK80Z

Transistortyp:: 1 N-Channel MOSFET

Typ:: Leistungs-MOSFET

Breite:: 3.5 mm

Marke:: STMicroelectronics

Vorwärtstranskonduktanz - Min:: 0.8 S

Abfallzeit:: 55 ns

Produktart:: MOSFET

Anstiegszeit:: 30 ns

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 22 ns

Typische Einschaltverzögerungszeit:: 8 ns

Gewichtseinheit:: 0.008818 oz

Tags: STN1NK, STN1N, STN1, STN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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STN1NK80Z Beschreibung

*** Source Electronics: MOSFET N-CH 800V 0.25A SOT223 / Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: N-Channel 800 V 16 Ohm Surface Mount SuperMESH MosFet - SOT-223

***icroelectronics: N-channel 800 V, 13 Ohm typ., 0.25 A SuperMESH Zener protected Power MOSFET in a SOT-223 package

***ment14 APAC: MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Source Voltage Vds:800V; On Resistance

***ark: MOSFET, N CHANNEL, 800V, 0.25A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:500mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:30V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 16 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***nell: MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 250mA; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 13ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 250mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package

***ure Electronics: N-Channel 600 V 15 Ohm 4.9 nC Surface Mount SuperMESH Power MosFet- SOT-223

***ical: Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R

***ment14 APAC: Transistor, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:600V; On Resistance Rds(on):15ohm;

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 15 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3

***nell: TRANSISTOR, MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 300mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - SOT-223

***emi: N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω

***et: Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: Power MOSFET, N-Channel, QFET®, 800 V, 0.2 A, 20 Ω, SOT-223

***ical: Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N-CH, 800V, 0.2A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 15.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-CHANNEL 600V 8 Ohm 0.4A SOT-223 SUPERMESH MOSFET

***ure Electronics: N-Channel 600 V 10 nC Surface Mount SuperMESH Power MosFet - SOT-223

***ical: Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R

***ser: Power MOSFET Transistors 600V 8Ohm 1A N-Chnnl SUPERMESH MOSFET

***ment14 APAC: MOSFET, N CH, 600V, 400MA, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:600V; On Resistance

***nell: MOSFET, N CH, 600V, 400MA, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 400mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 400 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 8.5 / Gate-Source Voltage V = 30 / Fall Time ns = 25 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3

***ark: MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity:N Channel; Continuous Dr

***el Electronic: Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

***nell: MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 120mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***ical: Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R

***i-Key Marketplace: MOSFET N-CH 600V 120MA SOT223-4

***ponent Stockers USA: 0.12 A 600 V 45 ohm N-CHANNEL Si POWER MOSFET

***nsix Microsemi: Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Stop Electro: Power Field-Effect Transistors

STN1NK80Z Mehr Informationen

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STN1NK80Z DISTI # V72:2272_18293796	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	3650	3000:$0.4056 1000:$0.4096 500:$0.5046 250:$0.5634 100:$0.5695 25:$0.7075 10:$0.7246 1:$0.8202
STN1NK80Z DISTI # 497-4669-1-ND	STMicroelectronics	MOSFET N-CH 800V 0.25A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7360In Stock	1000:$0.5346 500:$0.6705 100:$0.8575 10:$1.0790 1:$1.2100
STN1NK80Z DISTI # 497-4669-6-ND	STMicroelectronics	MOSFET N-CH 800V 0.25A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7360In Stock	1000:$0.5346 500:$0.6705 100:$0.8575 10:$1.0790 1:$1.2100
STN1NK80Z DISTI # 497-4669-2-ND	STMicroelectronics	MOSFET N-CH 800V 0.25A SOT223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.4860
STN1NK80Z DISTI # 30660704	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	3650	3000:$0.4056 1000:$0.4096 500:$0.5046 250:$0.5634 100:$0.5695 25:$0.7075 15:$0.7246
STN1NK80Z DISTI # STN1NK80Z	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R (Alt: STN1NK80Z) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
STN1NK80Z DISTI # STN1NK80Z	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R (Alt: STN1NK80Z) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.2789 8000:€0.2169 16000:€0.1779 24000:€0.1499 40000:€0.1389
STN1NK80Z DISTI # STN1NK80Z	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN1NK80Z) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4569 8000:$0.4349 16000:$0.4159 24000:$0.3969 40000:$0.3889
STN1NK80Z DISTI # 33R1237	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 33R1237) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0300 10:$0.8800 25:$0.8160 50:$0.7530 100:$0.6890 250:$0.6530 500:$0.6150
STN1NK80Z	STMicroelectronics	N-Channel 800 V 16 Ohm Surface Mount SuperMESH MosFet - SOT-223 RoHS: Compliant	52000Reel	4000:$0.2500
STN1NK80Z DISTI # 511-STN1NK80Z	STMicroelectronics	MOSFET POWER MOSFET Zener SuperMESH RoHS: Compliant	5851	1:$0.9900 10:$0.8400 100:$0.6460 500:$0.5710 1000:$0.4500 4000:$0.3990 8000:$0.3850
STN1NK80Z DISTI # 7141076P	STMicroelectronics	MOSFET N-CHANNEL 800V 0.25A SOT223, RL	3590	20:£0.5750 50:£0.5260 100:£0.4780 200:£0.4690
STN1NK80Z DISTI # 7141076	STMicroelectronics	MOSFET N-CHANNEL 800V 0.25A SOT223, PK	1850	10:£0.6670 20:£0.5750 50:£0.5260 100:£0.4780 200:£0.4690
STN1NK80Z	95	INSTOCK	280
STN1NK80Z	STMicroelectronics	INSTOCK	280
STN1NK80Z DISTI # 1752119	STMicroelectronics	MOSFET, N CH, 800V, 0.25A, SOT223 RoHS: Compliant	12057	1:$1.5700 10:$1.3400 100:$1.0300 500:$0.9030 1000:$0.7120 4000:$0.6320
STN1NK80Z DISTI # 1752119	STMicroelectronics	MOSFET, N CH, 800V, 0.25A, SOT223 RoHS: Compliant	12142	5:£0.5950 25:£0.5450 100:£0.4860 250:£0.4640 500:£0.4410
STN1NK80Z DISTI # XSFP00000091620	STMicroelectronics	PowerField-EffectTransistor,0.25AI(D),800V,16ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET RoHS: Compliant	34996	4000:$0.5000 34996:$0.4545
STN1NK80Z DISTI # XSKDRABV0028113	STMicroelectronics	RoHS: Compliant	4000	4000:$0.3127
STN1NK80Z DISTI # C1S730200518969	STMicroelectronics	Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	3650	250:$0.5634 100:$0.5695 25:$0.7075 10:$0.7246

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1990
Menge eingeben:

Der aktuelle Preis von STN1NK80Z dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,98 $~~; ~~0,98 $~~

10: ~~0,84 $~~; ~~8,40 $~~

100: ~~0,65 $~~; ~~64,60 $~~

500: ~~0,57 $~~; ~~285,50 $~~

1000: ~~0,45 $~~; ~~450,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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STN1NK80Z

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes