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HGT1S5N120BNS

HGT1S5N120BNS
Mfr. #:
HGT1S5N120BNS
Hersteller:
ON Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S5N120BNS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S5, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
HGT1S10N120BNST
DISTI # V72:2272_06305664		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
  • 100:$1.5790
  • 25:$1.9200
  • 10:$1.9430
  • 1:$2.2610
HGT1S10N120BNS
DISTI # V36:1790_06359750		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail0
  • 800000:$1.1230
  • 400000:$1.1260
  • 80000:$1.3650
  • 8000:$1.7870
  • 800:$1.8570
HGT1S10N120BNST
DISTI # V36:1790_06305664		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER0
  • 800000:$1.1010
  • 400000:$1.1030
  • 80000:$1.2330
  • 8000:$1.4410
  • 800:$1.4750
HGT1S10N120BNST
DISTI # HGT1S10N120BNSTCT-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
Min Qty: 1
Container: Cut Tape (CT)		1197In Stock
  • 100:$1.8491
  • 10:$2.3010
  • 1:$2.5600
HGT1S10N120BNST
DISTI # HGT1S10N120BNSTDKR-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
Min Qty: 1
Container: Digi-Reel®		1197In Stock
  • 100:$1.8491
  • 10:$2.3010
  • 1:$2.5600
HGT1S10N120BNST
DISTI # HGT1S10N120BNSTTR-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.1238
  • 2400:$1.1378
  • 1600:$1.2221
  • 800:$1.4750
HGT1S10N120BNS
DISTI # HGT1S10N120BNSFS-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$1.8570
HGT1S10N120BNS
DISTI # 26733932		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail50400
  • 36000:$1.2884
  • 24000:$1.3436
  • 12000:$1.4037
  • 800:$1.5675
HGT1S10N120BNST
DISTI # 33655150		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER43200
  • 5600:$1.0114
  • 2400:$1.0240
  • 1600:$1.0999
  • 800:$1.3275
HGT1S10N120BNS
DISTI # 23486344		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail800
  • 800:$1.6477
HGT1S10N120BNST
DISTI # 25744132		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
  • 100:$1.5790
  • 25:$1.9200
  • 10:$1.9430
  • 5:$2.2610
HGT1S10N120BNS
DISTI # HGT1S10N120BNS		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S10N120BNS)
RoHS: Compliant
Min Qty: 243
Container: Bulk		Americas - 0
  • 2430:$1.1900
  • 243:$1.2900
  • 486:$1.2900
  • 729:$1.2900
  • 1215:$1.2900
HGT1S10N120BNS
DISTI # HGT1S10N120BNS		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S10N120BNS)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.1438
  • 4800:$1.1728
  • 3200:$1.1878
  • 1600:$1.2032
  • 800:$1.2111
HGT1S10N120BNST
DISTI # HGT1S10N120BNST		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.1621
  • 4800:$1.1915
  • 3200:$1.2068
  • 1600:$1.2225
  • 800:$1.2305
HGT1S10N120BNS
DISTI # 98B1956		ON SemiconductorTRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes
RoHS: Compliant		0
  • 500:$1.3900
  • 250:$1.4300
  • 100:$1.7100
  • 50:$1.9700
  • 25:$2.1000
  • 10:$2.4000
  • 1:$2.7700
HGT1S10N120BNST
DISTI # 31Y1824		ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes
RoHS: Compliant		145
  • 500:$1.5000
  • 250:$1.6600
  • 100:$1.7300
  • 50:$1.8100
  • 25:$1.8900
  • 10:$1.9700
  • 1:$2.2800
HGT1S10N120BNST
DISTI # 29H0101		ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes
RoHS: Compliant		0
  • 12000:$1.1400
  • 6000:$1.2600
  • 3000:$1.3200
  • 1:$1.4000
HGT1S10N120BNST
DISTI # 512-HGT1S10N120BNST		ON SemiconductorIGBT Transistors N-Channel IGBT NPT Series 1200V
RoHS: Compliant		1260
  • 1:$2.3600
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4000
  • 800:$1.1600
  • 2400:$1.0800
  • 4800:$1.0400
HGT1S10N120BNSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
RoHS: Compliant		493
  • 1000:$1.3500
  • 500:$1.4200
  • 100:$1.4800
  • 25:$1.5500
  • 1:$1.6600
HGT1S10N120BNST
DISTI # 8076660		ON SemiconductorIn a Pack of 2, ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), PK
Min Qty: 2
Container: Package		40
  • 2:$3.9320
  • 8:$3.5160
  • 40:$3.1000
  • 200:$2.6910
  • 400:$2.2810
HGT1S10N120BNST
DISTI # 1241406		ON SemiconductorOn a Reel of 800, ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), RL
Min Qty: 800
Container: Reel		0
  • 800:$1.4010
  • 2400:$1.3620
HGT1S10N120BNST
DISTI # HGT1S10N120BNST		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,D2PAK1049
  • 500:$1.0700
  • 100:$1.1500
  • 25:$1.2800
  • 5:$1.5900
  • 1:$1.8500
HGT1S10N120BNST
DISTI # 2454176		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
RoHS: Compliant		175
  • 100:$2.7700
  • 10:$3.4500
  • 1:$3.8300
HGT1S10N120BNST
DISTI # 2454176RL		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
RoHS: Compliant		0
  • 100:$2.7700
  • 10:$3.4500
  • 1:$3.8300
HGT1S10N120BNST
DISTI # 2454176RL		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
RoHS: Compliant		0
  • 500:£1.1400
  • 100:£1.3100
  • 10:£1.6400
  • 1:£1.9300
HGT1S10N120BNST
DISTI # 2454176		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
RoHS: Compliant		334
  • 500:£1.1400
  • 100:£1.3100
  • 10:£1.6400
  • 1:£1.9300
HGT1S10N120BNST
DISTI # XSKDRABS0047651		ON SEMICONDUCTOR 
RoHS: Compliant		2400 in Stock0 on Order
  • 2400:$1.3000
  • 800:$1.3900
Bild Teil # Beschreibung
HGT1S5N120BNS

Mfr.#: HGT1S5N120BNS

OMO.#: OMO-HGT1S5N120BNS-1190

 Neu und Original
HGT1S5N120CNDS

Mfr.#: HGT1S5N120CNDS

OMO.#: OMO-HGT1S5N120CNDS-1190

 Neu und Original
HGT1S5N120CNS

Mfr.#: HGT1S5N120CNS

OMO.#: OMO-HGT1S5N120CNS-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von HGT1S5N120BNS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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