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DF1400R12IP4D

DF1400R12IP4D
Mfr. #:
DF1400R12IP4D
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules IGBT MODULES 1200V 1400A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DF1400R12IP4D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Module
Tags
DF140, DF14, DF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT Module N-Ch 1200V 1400A
***i-Key
IGBT MODULE VCES 1200V 1400A
***ronik
DF-Chopper 1200V 1400A PRIMEP
***ark
IGBT Module; Module Configuration:Chopper; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:7.7kW; No. of Pins:12 ;RoHS Compliant: Yes
***nell
IGBT,HIG POW,CHOP MOD NTC,1200V,1400A; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Max:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12
***ment14 APAC
IGBT, HIG POW, 1200V, 1400A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:7.7kW
***ineon
1200V PrimePACK3 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
Teil # Mfg. Beschreibung Aktie Preis
DF1400R12IP4DBOSA1
DISTI # DF1400R12IP4DBOSA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 1400A
RoHS: Not compliant
Min Qty: 2
Container: Bulk		Temporarily Out of Stock
  • 2:$644.2000
DF1400R12IP4DBOSA1
DISTI # DF1400R12IP4DBOSA1		Infineon Technologies AGIGBT Module N-Ch 1200V 1400A - Trays (Alt: DF1400R12IP4DBOSA1)
RoHS: Compliant
Min Qty: 2
Container: Tray		Americas - 0
  • 2:$684.1900
  • 4:$659.4900
  • 8:$635.5900
  • 12:$614.2900
  • 20:$603.2900
DF1400R12IP4DInfineon Technologies AGInsulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		2
  • 1000:$562.0000
  • 500:$591.5800
  • 100:$615.8900
  • 25:$642.2900
  • 1:$691.6900
DF1400R12IP4DBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		86
  • 1000:$515.1700
  • 500:$542.2900
  • 100:$564.5700
  • 25:$588.7700
  • 1:$634.0600
DF1400R12IP4D
DISTI # 641-DF1400R12IP4D		Infineon Technologies AGIGBT Modules IGBT MODULES 1200V 1400A2
  • 1:$641.1100
  • 5:$602.4700
DF1400R12IP4DInfineon Technologies AG 1
  • 1:$1,374.4500
Bild Teil # Beschreibung
DF1400R12IP4D

Mfr.#: DF1400R12IP4D

OMO.#: OMO-DF1400R12IP4D

 IGBT Modules IGBT MODULES 1200V 1400A
DF1400R12IP4DBOSA1

Mfr.#: DF1400R12IP4DBOSA1

OMO.#: OMO-DF1400R12IP4DBOSA1-INFINEON-TECHNOLOGIES

 IGBT MODULE VCES 1200V 1400A
DF1400R12IP4D

Mfr.#: DF1400R12IP4D

OMO.#: OMO-DF1400R12IP4D-125

 IGBT Modules IGBT MODULES 1200V 1400A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von DF1400R12IP4D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
843,00 $
843,00 $
10
800,85 $
8 008,50 $
100
758,70 $
75 870,00 $
500
716,55 $
358 275,00 $
1000
674,40 $
674 400,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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