IPP65R190E6XKSA1

IPP65R190E6XKSA1
Mfr. #:
IPP65R190E6XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP65R190E6XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IPP65R190
Verpackung
Rohr
Teil-Aliasnamen
IPP65R190E6 IPP65R190E6XK SP000849876
Gewichtseinheit
0.211644 oz
Handelsname
CoolMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
ID-Dauer-Drain-Strom
20.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Tags
IPP65R19, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube
***p One Stop Japan
650V COOLMOS E6 POWER TRANSISTOR
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPP65R190E6XKSA1
DISTI # 31291757
Infineon Technologies AGTrans MOSFET N-CH 700V 20.8A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 500:$1.8612
IPP65R190E6XKSA1
DISTI # IPP65R190E6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 20.2A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
124In Stock
  • 1000:$1.7504
  • 500:$2.0754
  • 100:$2.4380
  • 10:$2.9760
  • 1:$3.3100
IPP65R190E6XKSA1
DISTI # IPP65R190E6XKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R190E6XKSA1)
Min Qty: 241
Container: Bulk
Americas - 0
  • 723:$1.2900
  • 1205:$1.2900
  • 2410:$1.2900
  • 241:$1.3900
  • 482:$1.3900
IPP65R190E6XKSA1
DISTI # IPP65R190E6XKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190E6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 3000:$1.3900
  • 5000:$1.3900
  • 1000:$1.4900
  • 2000:$1.4900
  • 500:$1.5900
IPP65R190E6XKSA1
DISTI # 726-IPP65R190E6XKSA1
Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO220-3
RoHS: Compliant
440
  • 1:$3.0000
  • 10:$2.5500
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
IPP65R190E6
DISTI # 726-IPP65R190E6
Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO220-3
RoHS: Compliant
245
  • 1:$3.0000
  • 10:$2.5500
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
IPP65R190E6XKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
RoHS: Compliant
500
  • 1000:$1.3700
  • 500:$1.4400
  • 100:$1.5000
  • 25:$1.5600
  • 1:$1.6800
IPP65R190E6XKSA1
DISTI # 8576930
Infineon Technologies AGMOSFET N-CH 700V 20.8A COOLMOS E6 TO-220, TU350
  • 1500:£1.4800
  • 500:£1.6090
Bild Teil # Beschreibung
IPP65R190CFD

Mfr.#: IPP65R190CFD

OMO.#: OMO-IPP65R190CFD

MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1

MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C7

Mfr.#: IPP65R190C7

OMO.#: OMO-IPP65R190C7

MOSFET HIGH POWER_NEW
IPP65R190C7FKSA1

Mfr.#: IPP65R190C7FKSA1

OMO.#: OMO-IPP65R190C7FKSA1

MOSFET HIGH POWER_NEW
IPP65R190C6

Mfr.#: IPP65R190C6

OMO.#: OMO-IPP65R190C6

MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C7

Mfr.#: IPP65R190C7

OMO.#: OMO-IPP65R190C7-1190

MOSFET HIGH POWER_NEW
IPP65R190C7FKSA1

Mfr.#: IPP65R190C7FKSA1

OMO.#: OMO-IPP65R190C7FKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 13A TO220
IPP65R190CFD 65F6190

Mfr.#: IPP65R190CFD 65F6190

OMO.#: OMO-IPP65R190CFD-65F6190-1190

Neu und Original
IPP65R190CFDA

Mfr.#: IPP65R190CFDA

OMO.#: OMO-IPP65R190CFDA-1190

Neu und Original
IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IPP65R190E6XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,94 $
1,94 $
10
1,84 $
18,38 $
100
1,74 $
174,15 $
500
1,64 $
822,40 $
1000
1,55 $
1 548,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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