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FDMC86320

FDMC86320
Mfr. #:
FDMC86320
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 80V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC86320 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMC86320 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
11.7 mOhms
Qg - Gate-Ladung:
24 nC, 29 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
40 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC86320
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.005832 oz
Tags
FDMC863, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***Yang
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***ure Electronics
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*** Stop Electro
Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 80V 10.7A/22A 8MLP
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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Single N-Channel 75 V 0.011 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8
***ark
N Channel Mosfet, 75V, 28A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:28A; On Resistance Rds(On):0.011Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2V Rohs Compliant: No
***nell
MOSFET, N,; Transistor Type:MOSFET; On State Resistance:0.011ohm; Transistor Case Style:PowerPAK; Case Style:PowerPAK; Cont Current Id:28A; Max Junction Temperature Tj:150°C; Max Voltage Vgs th:2.5V; Min Voltage Vgs th:1.5V; Power Dissipation Pd:96W; Rise Time:255ns; Termination Type:SMD; Transistor Polarity:N; Typ Voltage Vds:75V; Typ Voltage Vgs th:2V; Voltage Vgs Rds on Measurement:10V
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***ow.cn
SI7148DP-T1-GE3 Vishay MOSFETs Transistor N-CH 75V 28A 8-Pin PowerPAK SO T/R - Arrow.com
***ment14 APAC
N CHANNEL MOSFET, 75V, 28A, SOIC; Transi; N CHANNEL MOSFET, 75V, 28A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:75V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:8
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N-Channel 100 V 10 mOhm 7.8 W Surface Mount Power Mosfet - SOIC-8
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MOSFET, N-CH, 100V, 19.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
***roFlash
Small Signal Field-Effect Transistor, 19.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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Single N-Channel 100 V 35 mOhm 20 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:4.5A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SJ ;RoHS Compliant: Yes
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 100V, 25A, DIRECTFET SJ; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 42W; Transistor Case Style: DirectFET SJ; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 60 V, 0.060 Ohm typ., 16 A STripFET II Power MOSFET in DPAK package
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N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***ark
N Channel Mosfet, 60V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***r Electronics
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N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
MOSFET, N CH, 60V, 16A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
Fairchild PowerTrench MOSFETs
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDMC86320
DISTI # 24565887		ON SemiconductorPT7 80V/20V NCH POWERTRENCH MO3000
  • 3000:$0.8005
FDMC86320
DISTI # FDMC86320FSCT-ND		ON SemiconductorMOSFET N CH 80V 10.7A 8-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1448In Stock
  • 1000:$0.9409
  • 500:$1.1356
  • 100:$1.3822
  • 10:$1.7200
  • 1:$1.9100
FDMC86320
DISTI # FDMC86320FSDKR-ND		ON SemiconductorMOSFET N CH 80V 10.7A 8-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1448In Stock
  • 1000:$0.9409
  • 500:$1.1356
  • 100:$1.3822
  • 10:$1.7200
  • 1:$1.9100
FDMC86320
DISTI # FDMC86320FSTR-ND		ON SemiconductorMOSFET N CH 80V 10.7A 8-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.8190
  • 3000:$0.8505
FDMC86320
DISTI # V36:1790_06337923		ON SemiconductorPT7 80V/20V NCH POWERTRENCH MO0
  • 3000000:$0.7272
  • 1500000:$0.7276
  • 300000:$0.7658
  • 30000:$0.8381
  • 3000:$0.8505
FDMC86320
DISTI # FDMC86320		ON SemiconductorTrans MOSFET N-CH 80V 10.7A 8-Pin MLP T/R (Alt: FDMC86320)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.6949
  • 18000:€0.7449
  • 12000:€0.8019
  • 6000:€0.8689
  • 3000:€1.0429
FDMC86320
DISTI # FDMC86320		ON SemiconductorTrans MOSFET N-CH 80V 10.7A 8-Pin MLP T/R - Bulk (Alt: FDMC86320)
RoHS: Compliant
Min Qty: 374
Container: Bulk		Americas - 0
  • 3740:$0.8269
  • 1870:$0.8479
  • 1122:$0.8579
  • 748:$0.8699
  • 374:$0.8749
FDMC86320
DISTI # FDMC86320		ON SemiconductorTrans MOSFET N-CH 80V 10.7A 8-Pin MLP T/R - Tape and Reel (Alt: FDMC86320)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7399
  • 18000:$0.7589
  • 12000:$0.7689
  • 6000:$0.7789
  • 3000:$0.7839
FDMC86320
DISTI # 94T9960		ON SemiconductorFET 80V 11.7 OHM MLP33 / REEL0
  • 9000:$0.7700
  • 1:$0.8000
FDMC86320
DISTI # 512-FDMC86320		ON SemiconductorMOSFET 80V N-Channel PowerTrench MOSFET
RoHS: Compliant		3230
  • 1:$1.7600
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0500
  • 1000:$0.8700
  • 3000:$0.8110
  • 6000:$0.7810
  • 9000:$0.7500
FDMC86320Fairchild Semiconductor CorporationPower Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		6019
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FDMC86320
DISTI # 7741193P		ON SemiconductorMOSFET N-CH 80V 10.7A POWERTRENCH MLP8, RL50
  • 120:£0.9660
  • 60:£1.0180
  • 30:£1.0700
  • 15:£1.1280
FDMC86320Fairchild Semiconductor CorporationPower Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		1995
    Bild Teil # Beschreibung
    LM5109BQNGTTQ1

    Mfr.#: LM5109BQNGTTQ1

    OMO.#: OMO-LM5109BQNGTTQ1

    		 Gate Drivers High Volt 1A Peak Half Bridge
    C0603C104M5RACTU

    Mfr.#: C0603C104M5RACTU

    OMO.#: OMO-C0603C104M5RACTU

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.1uF 0603 X7R 20%
    EMK107BB7225KA-T

    Mfr.#: EMK107BB7225KA-T

    OMO.#: OMO-EMK107BB7225KA-T

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 16VDC 2.2uF 10% X7R
    CRCW12060000Z0EAC

    Mfr.#: CRCW12060000Z0EAC

    OMO.#: OMO-CRCW12060000Z0EAC

    		 Thick Film Resistors - SMD 1/4Watt 0ohms Commercial Use
    CRCW040239K0FKEDC

    Mfr.#: CRCW040239K0FKEDC

    OMO.#: OMO-CRCW040239K0FKEDC

    		 Thick Film Resistors - SMD 1/16watt 39Kohms 1% Commercial Use
    CRCW04020000Z0EDC

    Mfr.#: CRCW04020000Z0EDC

    OMO.#: OMO-CRCW04020000Z0EDC

    		 Thick Film Resistors - SMD 1/16watt 0ohm Commercial Use
    LM5109BQNGTTQ1

    Mfr.#: LM5109BQNGTTQ1

    OMO.#: OMO-LM5109BQNGTTQ1-TEXAS-INSTRUMENTS

    		 Gate Drivers High Volt 1A Peak Half Bridge
    CRCW040210K0FKEDC

    Mfr.#: CRCW040210K0FKEDC

    OMO.#: OMO-CRCW040210K0FKEDC-VISHAY-DALE

    		 D10/CRCW0402-C 100 10K 1% ET7
    CRCW0603100KFKEAC

    Mfr.#: CRCW0603100KFKEAC

    OMO.#: OMO-CRCW0603100KFKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 100K 1% ET1
    CRCW040239K0FKEDC

    Mfr.#: CRCW040239K0FKEDC

    OMO.#: OMO-CRCW040239K0FKEDC-VISHAY-DALE

    		 D10/CRCW0402-C 100 39K 1% ET7
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von FDMC86320 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,76 $
    1,76 $
    10
    1,50 $
    15,00 $
    100
    1,20 $
    120,00 $
    500
    1,05 $
    525,00 $
    1000
    0,87 $
    870,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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