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STD3NK80Z-1

STD3NK80Z-1
Mfr. #:
STD3NK80Z-1
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STD3NK80Z-1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STD3NK80Z-1 Mehr Informationen STD3NK80Z-1 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
2.5 A
Rds On - Drain-Source-Widerstand:
4.5 Ohms
Vgs th - Gate-Source-Schwellenspannung:
4.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
19 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
70 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperMESH
Verpackung:
Rohr
Höhe:
6.2 mm
Länge:
6.6 mm
Serie:
STD3NK80Z-1
Transistortyp:
1 N-Channel
Breite:
2.4 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
2.1 S
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
36 ns
Typische Einschaltverzögerungszeit:
17 ns
Gewichtseinheit:
0.139332 oz
Tags
STD3NK80Z-1, STD3NK80Z, STD3NK80, STD3NK8, STD3NK, STD3N, STD3, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
*** Electronics
STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
***ark
MOSFET, N CHANNEL, 800V, 2.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - DPAK ZENER-PROTECTED SUPERMESH MOSFET
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in IPAK package
***ark
MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 800 V 3.5 Ohm Through Hole SuperMESH Power Mosfet - IPAK
***va Crawler
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-channel 620 V, 3 Ohm, 2.2 A, IPAK SuperMESH3(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ment14 APAC
MOSFET, N CH, 620V, 2.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 2.6A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.
***i-Key
MOSFET N-CH 600V 2.4A IPAK
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, IPAK
***ark
SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG - TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA
***r Electronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STD3NK80Z-1
DISTI # 497-12557-5-ND		STMicroelectronicsMOSFET N-CH 800V 2.5A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.7796
STD3NK80Z-1
DISTI # STD3NK80Z-1		STMicroelectronicsTrans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD3NK80Z-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.7869
  • 6000:$0.7499
  • 12000:$0.7159
  • 18000:$0.6839
  • 30000:$0.6699
STD3NK80Z-1
DISTI # 33R1154		STMicroelectronicsMOSFET, N CHANNEL, 800V, 2.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:-827
  • 1:$1.7700
  • 10:$1.5300
  • 100:$1.1500
  • 500:$0.9840
  • 1000:$0.8500
  • 2500:$0.6930
  • 10000:$0.6580
STD3NK80Z-1
DISTI # 511-STD3NK80Z-1		STMicroelectronicsMOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
RoHS: Compliant		2501
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7620
  • 3000:$0.7090
  • 6000:$0.6830
  • 9000:$0.6570
STD3NK80Z-1
DISTI # 6875352P		STMicroelectronicsMOSFET N-CH 800V 2.5A SUPERMESH IPAK, TU169
  • 25:£0.9520
  • 50:£0.8560
  • 125:£0.7600
  • 250:£0.7300
STD3NK80Z-1
DISTI # XSFP00000156491		STMicroelectronicsPowerField-EffectTransistor,2.5AI(D),800V,4.5ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-251
RoHS: Compliant		20997
  • 450:$0.4500
  • 20997:$0.4091
STD3NK80Z-1
DISTI # 1752036		STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant		827
  • 1:$2.4600
  • 10:$2.0900
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2100
  • 3000:$1.1300
  • 6000:$1.0900
  • 9000:$1.0400
STD3NK80Z-1
DISTI # 1752036		STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant		827
  • 5:£1.2300
  • 25:£0.9130
  • 100:£0.8100
  • 250:£0.7780
  • 500:£0.7410
Bild Teil # Beschreibung
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B

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STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F

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MMSZ4696T1G

Mfr.#: MMSZ4696T1G

OMO.#: OMO-MMSZ4696T1G

 Zener Diodes 9.1V 500mW
ES1D-13-F

Mfr.#: ES1D-13-F

OMO.#: OMO-ES1D-13-F

 Rectifiers 200V 1A
US1K-13-F

Mfr.#: US1K-13-F

OMO.#: OMO-US1K-13-F

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LTV-817S

Mfr.#: LTV-817S

OMO.#: OMO-LTV-817S

 Transistor Output Optocouplers Optocoupler Phototrans
GRM55DR72J224KW01L

Mfr.#: GRM55DR72J224KW01L

OMO.#: OMO-GRM55DR72J224KW01L

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 0.22uF 630volts X7R 10%
0312-0-15-15-34-27-10-0

Mfr.#: 0312-0-15-15-34-27-10-0

OMO.#: OMO-0312-0-15-15-34-27-10-0

 Circuit Board Hardware - PCB 10u AU OVER NI 34 CON
SDR0403-2R2ML

Mfr.#: SDR0403-2R2ML

OMO.#: OMO-SDR0403-2R2ML

 Fixed Inductors 2.2uH 20% SMD 0403
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

 TVS DIODE 128V 185V SMB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von STD3NK80Z-1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,54 $
1,54 $
10
1,31 $
13,10 $
100
1,05 $
105,00 $
500
0,92 $
459,50 $
1000
0,76 $
762,00 $
3000
0,71 $
2 127,00 $
6000
0,68 $
4 098,00 $
9000
0,66 $
5 913,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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