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IPW60R080P7XKSA1

IPW60R080P7XKSA1
Mfr. #:
IPW60R080P7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW60R080P7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW60R080P7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
37 A
Rds On - Drain-Source-Widerstand:
69 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
51 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
129 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
IPW60R080P7 SP001647040
Gewichtseinheit:
0.211644 oz
Tags
IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 37A
***i-Key
MOSFET N-CH 600V 37A TO247-3
***ronik
N-CH 600V 37A 80mOhm TO-247
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 37A, 129W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 37A, 129W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:129W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 37A, 129W, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:37A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:129W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Teil # Mfg. Beschreibung Aktie Preis
IPW60R080P7XKSA1
DISTI # V36:1790_18196277		Infineon Technologies AGIPW60R080P7XKSA10
  • 240000:$2.6110
  • 120000:$2.6150
  • 24000:$3.0300
  • 2400:$3.8240
  • 240:$3.9600
IPW60R080P7XKSA1
DISTI # V99:2348_18196277		Infineon Technologies AGIPW60R080P7XKSA10
  • 240000:$2.8070
  • 120000:$2.8100
  • 24000:$3.1710
  • 2400:$3.8450
  • 240:$3.9600
IPW60R080P7XKSA1
DISTI # IPW60R080P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 37A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		433In Stock
  • 2640:$3.1304
  • 720:$3.9071
  • 240:$4.5897
  • 25:$5.2956
  • 10:$5.6020
  • 1:$6.2400
IPW60R080P7XKSA1
DISTI # SP001647040		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001647040)
RoHS: Compliant
Min Qty: 1		Europe - 170
  • 1000:€2.3900
  • 500:€2.5900
  • 100:€2.6900
  • 50:€2.7900
  • 25:€2.8900
  • 10:€3.0900
  • 1:€3.2900
IPW60R080P7XKSA1
DISTI # IPW60R080P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R080P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.7900
  • 2400:$2.7900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.1900
IPW60R080P7XKSA1
DISTI # 93AC7139		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes230
  • 500:$3.7600
  • 250:$4.1800
  • 100:$4.4100
  • 50:$4.6400
  • 25:$4.8600
  • 10:$5.0900
  • 1:$5.9900
IPW60R080P7XKSA1
DISTI # 726-IPW60R080P7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		929
  • 1:$5.9300
  • 10:$5.0400
  • 100:$4.3700
  • 250:$4.1400
  • 500:$3.7200
IPW60R080P7XKSA1
DISTI # XSKDRABV0050081		Infineon Technologies AG 
RoHS: Compliant		192 in Stock0 on Order
  • 192:$3.9300
  • 119:$4.2100
IPW60R080P7XKSA1
DISTI # 2986487		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247
RoHS: Compliant		230
  • 100:$6.3400
  • 10:$7.3000
  • 1:$9.4800
IPW60R080P7XKSA1
DISTI # 2986487		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247230
  • 500:£2.7000
  • 250:£3.0000
  • 100:£3.1700
  • 10:£3.6500
  • 1:£4.7600
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Verfügbarkeit
Aktie:
349
Auf Bestellung:
2332
Menge eingeben:
Der aktuelle Preis von IPW60R080P7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,93 $
5,93 $
10
5,04 $
50,40 $
100
4,37 $
437,00 $
250
4,14 $
1 035,00 $
500
3,72 $
1 860,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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