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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFP6P08 | Harris Semiconductor | Power Field-Effect Transistor, 6A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 101 |
|
| RFP6P08 | Harris Semiconductor | 3 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFP60-50 OMO.#: OMO-RFP60-50-1190 |
Neu und Original |
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Mfr.#: RFP6010 OMO.#: OMO-RFP6010-1190 |
Neu und Original |
|
|
Mfr.#: RFP60N03 OMO.#: OMO-RFP60N03-1190 |
Neu und Original |
|
|
Mfr.#: RFP60N06 OMO.#: OMO-RFP60N06-1190 |
Neu und Original |
|
|
Mfr.#: RFP62010A OMO.#: OMO-RFP62010A-1190 |
Neu und Original |
|
|
Mfr.#: RFP62011 OMO.#: OMO-RFP62011-1190 |
Neu und Original |
|
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Mfr.#: RFP6N08 OMO.#: OMO-RFP6N08-1190 |
Neu und Original |
|
|
Mfr.#: RFP6N45 OMO.#: OMO-RFP6N45-1190 |
Power Field-Effect Transistor, 6A I(D), 450V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
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Mfr.#: RFP6N50 OMO.#: OMO-RFP6N50-1190 |
Power Field-Effect Transistor, 6A I(D), 500V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
|
|
Mfr.#: RFP6P10 OMO.#: OMO-RFP6P10-1190 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |