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APT64GA90LD30

APT64GA90LD30
Mfr. #:
APT64GA90LD30
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT64GA90LD30 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT64GA90LD30 DatasheetAPT64GA90LD30 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-264-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
900 V
Kollektor-Emitter-Sättigungsspannung:
2.5 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
117 A
Pd - Verlustleistung:
500 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
117 A
Höhe:
5.21 mm
Länge:
26.49 mm
Betriebstemperaturbereich:
- 55 C to + 150 C
Breite:
20.5 mm
Marke:
Mikrochip / Mikrosemi
Kontinuierlicher Kollektorstrom:
117 A
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Handelsname:
POWER MOS 8
Gewichtseinheit:
0.373904 oz
Tags
APT64, APT6, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-264
***th Star Micro
Insulated Gate Bipolar Transistor - Power MOS 8
***i-Key
IGBT 900V 117A 500W TO-264
***hardson RFPD
POWER IGBT TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
APT64GA90LD30
DISTI # APT64GA90LD30-ND		Microsemi CorporationIGBT 900V 117A 500W TO-264
RoHS: Compliant
Min Qty: 45
Container: Tube		Temporarily Out of Stock
  • 45:$11.2144
APT64GA90LD30
DISTI # APT64GA90LD30		Microchip Technology IncTrans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-264 - Rail/Tube (Alt: APT64GA90LD30)
RoHS: Compliant
Min Qty: 45
Container: Tube		Americas - 0
  • 450:$7.0900
  • 225:$7.1900
  • 135:$7.4900
  • 90:$7.6900
  • 45:$7.9900
APT64GA90LD30
DISTI # 494-APT64GA90LD30		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant		1
  • 1:$12.4500
  • 10:$11.3200
  • 25:$10.4700
  • 50:$9.9000
  • 100:$9.5500
  • 250:$8.7200
  • 500:$8.1700
  • 1000:$7.2800
APT64GA90LD30
DISTI # APT64GA90LD30		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		1950
  • 45:$7.5700
  • 100:$7.3700
  • 500:$7.2900
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Mfr.#: ALU ENG KIT 03

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RL207-TP

Mfr.#: RL207-TP

OMO.#: OMO-RL207-TP-MICRO-COMMERCIAL-COMPONENTS

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TL082CP

Mfr.#: TL082CP

OMO.#: OMO-TL082CP-TEXAS-INSTRUMENTS

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von APT64GA90LD30 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,45 $
12,45 $
10
11,32 $
113,20 $
25
10,47 $
261,75 $
50
9,90 $
495,00 $
100
9,55 $
955,00 $
250
8,72 $
2 180,00 $
500
8,17 $
4 085,00 $
1000
7,28 $
7 280,00 $
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