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R6011KND3TL1

R6011KND3TL1
Mfr. #:
R6011KND3TL1
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET NCH 600V 11A POWER MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6011KND3TL1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6011KND3TL1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
390 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
124 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
20 ns
Tags
R6011K, R6011, R601, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Super Junction-MOS EN & KN Series MOSFETs
ROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.     
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Bild Teil # Beschreibung
R6011KNX

Mfr.#: R6011KNX

OMO.#: OMO-R6011KNX

 MOSFET Nch 600V 11A Si MOSFET
R6011KNJTL

Mfr.#: R6011KNJTL

OMO.#: OMO-R6011KNJTL

 MOSFET Nch 600V 11A Si MOSFET
R6011KND3TL1

Mfr.#: R6011KND3TL1

OMO.#: OMO-R6011KND3TL1

 MOSFET NCH 600V 11A POWER MOSFET
R6011KND3TL

Mfr.#: R6011KND3TL

OMO.#: OMO-R6011KND3TL-1190

 Neu und Original
R6011KNJTL

Mfr.#: R6011KNJTL

OMO.#: OMO-R6011KNJTL-ROHM-SEMI

 MOSFET N-CHANNEL 600V 11A TO263
R6011KNX

Mfr.#: R6011KNX

OMO.#: OMO-R6011KNX-ROHM-SEMI

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Mfr.#: R6011KNXA24C12

OMO.#: OMO-R6011KNXA24C12-1190

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R6011KNXC7

Mfr.#: R6011KNXC7

OMO.#: OMO-R6011KNXC7-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von R6011KND3TL1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,51 $
2,51 $
10
2,13 $
21,30 $
100
1,70 $
170,00 $
500
1,49 $
745,00 $
1000
1,23 $
1 230,00 $
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