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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IHW15N120R3FKSA1 DISTI # V99:2348_06377587 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 169 |
|
| IHW15N120R3FKSA1 DISTI # V36:1790_06377587 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 0 |
|
| IHW15N120R3FKSA1 DISTI # IHW15N120R3FKSA1-ND | Infineon Technologies AG | IGBT 1200V 30A 254W TO247-3 Min Qty: 240 Container: Tube | Temporarily Out of Stock |
|
| IHW15N120R3FKSA1 DISTI # 26197269 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 169 |
|
| IHW15N120R3FKSA1 DISTI # 32637504 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 154 |
|
| IHW15N120R3XK DISTI # IHW15N120R3FKSA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW15N120R3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube | Americas - 0 |
|
| IHW15N120R3FKSA1 DISTI # 13T9427 | Infineon Technologies AG | IGBT+ DIODE,1200V,15A,TO247,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:254W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| IHW15N120R3 DISTI # 726-IHW15N120R3 | Infineon Technologies AG | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body RoHS: Compliant | 687 |
|
| IHW15N120R3FKSA1 DISTI # 726-IHW15N120R3FKSA1 | Infineon Technologies AG | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body RoHS: Compliant | 63 |
|
| IHW15N120R3FKSA1 DISTI # 1655436 | Infineon Technologies AG | In a Tube of 30, Infineon IHW15N120R3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, TU Min Qty: 30 Container: Tube | 0 |
|
| IHW15N120R3FKSA1 DISTI # 1832348 | Infineon Technologies AG | IGBT+ DIODE,1200V,15A,TO247 RoHS: Compliant | 234 |
|
| IHW15N120R3FKSA1 DISTI # 1832348 | Infineon Technologies AG | IGBT+ DIODE,1200V,15A,TO247 RoHS: Compliant | 234 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IHW15N120R3 OMO.#: OMO-IHW15N120R3 |
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body |
|
Mfr.#: IHW15N120R2 OMO.#: OMO-IHW15N120R2 |
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A |
|
Mfr.#: IHW15N120R OMO.#: OMO-IHW15N120R-1190 |
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A |
|
Mfr.#: IHW15N120R2 |
IGBT 1200V 30A 357W TO247-3 |
|
|
Mfr.#: IHW15N120R3,H15R1203, |
Neu und Original |
|
|
Mfr.#: IHW15N120R3/H15R1203 |
Neu und Original |
|
|
Mfr.#: IHW15N120R3FKSA1 |
IGBT 1200V 30A 254W TO247-3 |
|
|
Mfr.#: IHW15N120R3S OMO.#: OMO-IHW15N120R3S-1190 |
Neu und Original |
|
|
Mfr.#: IHW15N120R2 H15R1202 |
Neu und Original |
|
|
Mfr.#: IHW15N120R3 OMO.#: OMO-IHW15N120R3-126 |
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body |