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IRFB4510PBF

IRFB4510PBF
Mfr. #:
IRFB4510PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB4510PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB4510PBF DatasheetIRFB4510PBF Datasheet (P4-P6)IRFB4510PBF Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IRFB4510PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
62 A
Rds On - Drain-Source-Widerstand:
10.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
58 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
140 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
100 S
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SP001566724
Gewichtseinheit:
0.211644 oz
Tags
IRFB45, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 13.5 mOhm 58 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 100V 44A TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET N CH 100V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 62 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 10.7 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
***eco
Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg
***ure Electronics
Single N-Channel 100 V 14 mOhm 90 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 100V 73A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 190 W
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 2200pF U2J +/-5% 1000volts
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
***nell
MOSFET, N, 100V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:73A; Resistance, Rds On:11mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220 (SOT-78B); Termination Type:Through Hole; Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:370mJ; Current, Idm Pulse:290A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:190W; Power, Pd:190W; Power, Ptot:190W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:35ns; Transistors, No. of:1; Typ Capacitance Ciss:3550pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***p One Stop
Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube
***emi
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ
***ure Electronics
N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB
***enic
100V 61A 150W 16m´Î@10V61A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ponent Stockers USA
75 A 80 V 0.01 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ser
MOSFETs 75a, 80V, 0.010 Ohm N-Ch MOSFET
***Yang
PWR MOS ULTRAFET 80V/75A/0.010 OHMS N-CH - Bulk
***ark
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail
***peria
N-channel TrenchMOS standard level FET
***or
PFET, 47A I(D), 100V, 0.028OHM,
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFB4510PBF
DISTI # V99:2348_13889980		Infineon Technologies AGTrans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1040
  • 1000:$0.4858
  • 500:$0.5874
  • 100:$0.6685
  • 10:$0.8173
  • 1:$0.9146
IRFB4510PBF
DISTI # IRFB4510PBF-ND		Infineon Technologies AGMOSFET N CH 100V 62A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		943In Stock
  • 1000:$0.5981
  • 500:$0.7576
  • 100:$0.9769
  • 10:$1.2360
  • 1:$1.4000
IRFB4510PBF
DISTI # 26198093		Infineon Technologies AGTrans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1040
  • 1000:$0.4858
  • 500:$0.5874
  • 100:$0.6685
  • 16:$0.8173
IRFB4510PBF
DISTI # 25287324		Infineon Technologies AGTrans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		350
  • 1000:$0.5222
  • 500:$0.6614
  • 100:$0.7488
  • 22:$0.9792
IRFB4510PBF
DISTI # IRFB4510PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4510PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.4169
  • 2000:$0.4019
  • 4000:$0.3879
  • 6000:$0.3749
  • 10000:$0.3679
IRFB4510PBF
DISTI # IRFB4510PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4510PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB4510PBF
    DISTI # SP001566724    		Infineon Technologies AGTrans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB (Alt: SP001566724)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.7509
    • 10:€0.6669
    • 25:€0.6009
    • 50:€0.5459
    • 100:€0.4999
    • 500:€0.4619
    • 1000:€0.4289
    IRFB4510PBF
    DISTI # 70411659    		Infineon Technologies AGIRFB4510PBF N-channel MOSFET Transistor,62 A,100 V,3-Pin TO-220AB
    RoHS: Compliant    		540
    • 1:$1.5840
    • 10:$1.3980
    • 100:$1.2190
    • 500:$1.0560
    • 1000:$0.9320
    IRFB4510PBF
    DISTI # 942-IRFB4510PBF    		Infineon Technologies AGMOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC
    RoHS: Compliant    		1317
    • 1:$1.1900
    • 10:$1.0200
    • 100:$0.7800
    • 500:$0.6890
    • 1000:$0.5440
    IRFB4510PBFInternational Rectifier 
    RoHS: Not Compliant    		50
    • 1000:$0.4700
    • 500:$0.5000
    • 100:$0.5200
    • 25:$0.5400
    • 1:$0.5800
    IRFB4510PBF
    DISTI # 7848922    		Infineon Technologies AGTRANSISTOR MOSFET N-CH 100V 44A TO-220AB, PK205
    • 5:£0.9360
    • 25:£0.7940
    • 100:£0.6080
    • 250:£0.5760
    • 500:£0.5400
    IRFB4510PBF
    DISTI # IRFB4510PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,62A,140W,TO220AB123
    • 1:$1.2700
    • 3:$1.1500
    • 10:$0.9400
    • 100:$0.8000
    IRFB4510PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 50
      IRFB4510PBF
      DISTI # IRFB4510PBF      		Infineon Technologies AGN-Ch 100V 62A 140W 0,0135R TO220AB
      RoHS: Compliant      		300
      • 10:€0.6810
      • 50:€0.5010
      • 200:€0.4410
      • 500:€0.4245
      IRFB4510PBF
      DISTI # C1S322000522103      		Infineon Technologies AGTrans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		1040
      • 1000:$0.4858
      • 500:$0.5874
      • 100:$0.6685
      • 10:$0.8173
      IRFB4510PBF
      DISTI # XSLY00000000927      		INFINEON/IRTO-220AB
      RoHS: Compliant      		756
      • 1050:$0.6857
      IRFB4510PBF
      DISTI # 2148085      		Infineon Technologies AGMOSFET N CH 100V, 62A, TO220
      RoHS: Compliant      		0
      • 1:$1.8800
      • 10:$1.6200
      • 100:$1.2400
      • 500:$1.1500
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von IRFB4510PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,19 $
      1,19 $
      10
      1,01 $
      10,10 $
      100
      0,78 $
      78,00 $
      500
      0,69 $
      344,50 $
      1000
      0,54 $
      544,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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