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STI14NM65N

STI14NM65N
Mfr. #:
STI14NM65N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch, 650V-0.33ohms 12A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STI14NM65N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STI14NM65N Mehr Informationen STI14NM65N Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
8.95 mm
Länge:
10 mm
Serie:
STB14NM65N
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
STMicroelectronics
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
11 ns
Gewichtseinheit:
0.050717 oz
Tags
STI14N, STI14, STI1, STI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V - 0.33 Y - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET
***i-Key
MOSFET N-CH 650V 12A I2PAK
***nell
MOSFET, N CH, 650V, 12A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:SOT-226; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Id Max:12A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
STI14NM65N
DISTI # STI14NM65N-ND		STMicroelectronicsMOSFET N-CH 650V 12A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    STI14NM65N
    DISTI # 511-STI14NM65N    		STMicroelectronicsMOSFET N-Ch, 650V-0.33ohms 12A
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      STI14NM50N

      Mfr.#: STI14NM50N

      OMO.#: OMO-STI14NM50N

      		 MOSFET N-Ch 500 V 0.28 Ohm 12 A MDmesh(TM) II
      STI14NM65N

      Mfr.#: STI14NM65N

      OMO.#: OMO-STI14NM65N

      		 MOSFET N-Ch, 650V-0.33ohms 12A
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      		 Neu und Original
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      Mfr.#: STI1430

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      STI14NM50N

      Mfr.#: STI14NM50N

      OMO.#: OMO-STI14NM50N-STMICROELECTRONICS

      		 MOSFET N CH 500V 12A I2PAK
      STI14NM65N

      Mfr.#: STI14NM65N

      OMO.#: OMO-STI14NM65N-STMICROELECTRONICS

      		 MOSFET N-CH 650V 12A I2PAK
      STI14NM65N-H

      Mfr.#: STI14NM65N-H

      OMO.#: OMO-STI14NM65N-H-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von STI14NM65N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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