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IRFB42N20DPBF

IRFB42N20DPBF
Mfr. #:
IRFB42N20DPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 200V SINGLE N-CH 55mOhms 91nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB42N20DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB42N20DPBF DatasheetIRFB42N20DPBF Datasheet (P4-P6)IRFB42N20DPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
55 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
91 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
2.4 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
21 S
Abfallzeit:
32 ns
Produktart:
MOSFET
Anstiegszeit:
69 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
29 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
SP001560222
Gewichtseinheit:
0.211644 oz
Tags
IRFB42N20DP, IRFB42N20D, IRFB42N, IRFB42, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.055 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3
*** Source Electronics
Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A) | MOSFET N-CH 200V 44A TO-220AB
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ied Electronics & Automation
MOSFET, 200V, 42.6A, 55 mOhm, 91 nC Qg, TO-220AB
***et
Trans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB
***ment14 APAC
MOSFET, N, 200V, 42.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:42.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Junction to Case Thermal Resistance A:0.5°C/W; On State resistance @ Vgs = 10V:55ohm; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Teil # Mfg. Beschreibung Aktie Preis
IRFB42N20DPBF
DISTI # 30701247		Infineon Technologies AGTrans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		902
  • 5000:$1.2672
  • 2500:$1.3152
  • 1000:$1.3824
  • 500:$1.6320
  • 250:$1.8240
  • 100:$1.9200
  • 10:$2.2176
IRFB42N20DPBF
DISTI # IRFB42N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 44A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1859In Stock
  • 1000:$1.5767
  • 500:$1.8695
  • 100:$2.3087
  • 50:$2.5340
  • 1:$3.1500
IRFB42N20DPBF
DISTI # C1S322000521955		Infineon Technologies AGTrans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		902
  • 500:$1.5100
  • 100:$1.9700
  • 50:$2.1400
  • 10:$2.6100
  • 1:$4.0200
IRFB42N20DPBF
DISTI # SP001560222		Infineon Technologies AGTrans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB (Alt: SP001560222)
RoHS: Compliant
Min Qty: 1		Europe - 6228
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.6900
  • 50:€1.6900
  • 100:€1.3900
  • 500:€1.1900
  • 1000:€1.1900
IRFB42N20DPBF
DISTI # IRFB42N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB42N20DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$1.1799
  • 3100:$1.1369
  • 6100:$1.0959
  • 15000:$1.0589
  • 30000:$1.0399
IRFB42N20DPBF
DISTI # IRFB42N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB (Alt: IRFB42N20DPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB42N20DPBF
    DISTI # 38K2490    		Infineon Technologies AGMOSFET, N, 200V, 42.6A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:42.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes311
    • 1:$2.7100
    • 10:$2.3100
    • 100:$2.0000
    • 500:$1.7000
    • 1000:$1.4400
    • 2500:$1.3700
    • 5000:$1.3200
    IRFB42N20DPBF
    DISTI # 70017535    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.055Ohm,ID 44A,TO-220AB,PD 330W,VGS +/-30V
    RoHS: Compliant    		2057
    • 1:$4.3600
    • 2:$4.2730
    • 5:$4.1420
    • 10:$3.9680
    • 25:$3.7060
    IRFB42N20DPBF
    DISTI # 942-IRFB42N20DPBF    		Infineon Technologies AGMOSFET 200V SINGLE N-CH 55mOhms 91nC
    RoHS: Compliant    		2560
    • 1:$2.7100
    • 10:$2.3100
    • 100:$2.0000
    • 250:$1.9000
    • 500:$1.7000
    • 1000:$1.4400
    • 2500:$1.3700
    • 5000:$1.3200
    IRFB42N20DPBF
    DISTI # IRFB42N20DPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,42.6A,300W,TO220AB35
    • 1:$2.3500
    • 3:$2.1300
    • 10:$1.7500
    • 100:$1.6100
    IRFB42N20DPBF
    DISTI # IRFB42N20DPBF    		Infineon Technologies AGN-Ch 200V 44A 330W 0,055R TO220AB
    RoHS: Compliant    		100
    • 10:€1.5500
    • 50:€1.2500
    • 200:€1.1500
    • 500:€1.1100
    IRFB42N20DPBF
    DISTI # XSKDRABV0021428    		INF 
    RoHS: Compliant    		792
    • 350:$2.4400
    • 792:$2.2400
    IRFB42N20DPBF
    DISTI # XSLY00000000920    		INFINEON/IRTO-220AB
    RoHS: Compliant    		2556
    • 700:$1.0000
    • 2556:$0.9333
    IRFB42N20DPBF
    DISTI # 8657971    		Infineon Technologies AGMOSFET, N, 200V, 42.6A, TO-220
    RoHS: Compliant    		350
    • 1:£2.6000
    • 10:£1.8500
    • 100:£1.6100
    • 250:£1.5400
    • 500:£1.3800
    IRFB42N20DPBF
    DISTI # 8657971    		Infineon Technologies AGMOSFET, N, 200V, 42.6A, TO-220
    RoHS: Compliant    		320
    • 1:$4.4000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IRFB42N20DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,71 $
    2,71 $
    10
    2,31 $
    23,10 $
    100
    2,00 $
    200,00 $
    250
    1,90 $
    475,00 $
    500
    1,70 $
    850,00 $
    1000
    1,44 $
    1 440,00 $
    2500
    1,37 $
    3 425,00 $
    5000
    1,32 $
    6 600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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